Bridgestone Corporation

Spansion Llc.

Sumitomo Metal Industries, Inc.

Hiroaki Wada

Kazuhiro Kurihara

Yoshitomo Takahashi

Masashi Otsuki

Tasuku Saito

Minoru Yamashita

Taro Miyamoto

Shigeki Endo

Tadaaki Miyazaki

Kazunari Kido

Akira Satou

Atsushi Hatakeyama

Yasushi Kasa

Takahiro Kawagoe

Takao Ogino

Yasuo Kurachi

Yoshitomo Masuda

Takayuki Maruyama

Masao Hashimoto

Katsuhiko Arai

Haruyuki Kano

Kazuhiro Minagawa

Keiichiro Kikuchi

Shoichi Kojima

Yoji Watabe

Norihiko Yamaki

Meisetsu Kajiwara

Keiichirou Kikuchi

Norihiro Yamaki

Sanae Irako

The present invention is a semiconductor device including: a resistor R(first resistor part) and an FET(second resistor part) connected in series between a power supply Vcc (first power supply) and ground (second power supply); an output node Nprovided between the resistor Rand FETand used for outputting a reference voltage; a feedback node Nprovided between the power supply Vcc and the ground; and a voltage control circuit () that maintains a voltage of the feedback node Nat a constant level by using the reference voltage of the output node Nand the voltage of the feedback node N. The present invention can provide a semiconductor device having a reference voltage generating circuit capable of generating the reference voltage that does not greatly depend on a power supply voltage and its control method.

Semiconductor device and control method of the same

A memory that employs a redundant cell array for recovery of one or more failed core cell arrays of multi-bit memory cells is described. The memory includes a plurality of core cell arrays, at least one redundant cell array, and a memory controller. The memory controller is configured to dynamically assign the redundant cell array to a failed core cell array when erasing at least a portion of the plurality of core cell arrays. The memory controller is further configured to provide read/write access to the redundant cell array when the failed core cell array is selected for read/write access.

Memory employing redundant cell array of multi-bit cells

The present invention is directed to a semiconductor device having a non-volatile memory cell, and a readout circuitwhich reads out data of the memory cellDATA using a first data DATAobtained by sensing a first reference level REFfor reading out the data of the memory celland a level of the memory cellCORE and using a second data DATAobtained by sensing a second reference level REFfor reading out the data of the memory celland the level of the memory cellCORE, and to a controlling method for the same.

Semiconductor device and method for controlling a semiconductor device

A semiconductor device includes a first memory cell array that includes memory cells for storing data and is managed on a sector basis, a second memory cell array including memory cells storing sector protection information on the sector basis, and a control circuit checking the sector protection information stored in the second memory cell array whenever the sector to be programmed or erased is selected. Thus, the sector protection information in all the sectors does not have to be latched at the time of power on. The latch circuit equal in number to the sector does not have to be provided. It is thus possible to reduce the number of the circuits drastically and the chip area can be reduced.

Semiconductor memory device and control method having data protection feature

The semiconductor device of the present invention includes a column decoder (select and write circuit), which selects multiple pages that are not located adjacently to each other so as to simultaneously program multiple bits in the memory cells of the selected page, when the multiple bits are programmed in the multiple pages. The page is a selection unit and is composed of a given number of the memory cells located on a same word line. An unnecessary stress of programming is not applied to the memory cells that are not to be programmed, by increasing the distance between the memory cells to be programmed simultaneously.

Semiconductor device and programming method

The semiconductor device of the present invention includes at least one dummy cell of a programmed state proximately located to an edge of a reference cell array. Thus, the leak current does not flow when a data of the cell on the edge of the reference cell array is read out. The memory cell located around the center of the reference cell array has neighboring cells of the programmed state, and the leak current can be prevented when the data is read out from all the reference cells. Thus, the reference current can be supplied stably.

A sintered silicon carbide has a high density and only small amounts of organic and inorganic impurities on the surface and in the vicinity of the surface, i.e., a density of 2.9 g/cm or more and an amount of each impurity smaller than 1.0&times;10 atoms/cm on the surface and in the vicinity of the surface. A method for cleaning sintered silicon carbide in a wet condition comprises treating sintered silicon carbide in a step of dipping into a quasi-aqueous organic solvent, a step of dipping into an aqueous solution of an ammonium compound, a step of dipping into an aqueous solution of an inorganic acid and a step of dipping into pure water. Organic and inorganic impurities present on the surface and in the vicinity of the surface of the sintered silicon carbide are removed easily in accordance with the method.

Method for cleaning sintered silicon carbide in wet condition

The present invention discloses an electrorheological fluid comprising: spherical carbonaceous particles obtained substantially from a solvent and a condensation product formed by a methylene type bonding of an aromatic sulfonic acid or a salt thereof as materials; and an, electric insulating oil. The electric insulating oil preferably has a relative dielectric constant of 3 or more and a kinematic viscosity at 25&deg; C. of 1 to 100 mm /second. The electric insulating oil may be, for example, fluorosilicone oil, a mixture of fluorosilicone oil and silicone oil, or a mixture of dimethyl silicone oil and modified silicone oil. The electrorheological fluid of the present invention may further include modified silicone oil at a weight percentage of 0.01 to 5%. The electrorheological fluid of the present invention can be formed so as to have a dielectric breakdown strength of a predetermined value or more due to a production process in which the spherical carbonaceous particles and the electric insulating oil are mixed under a reduced pressure or a production process in which the spherical carbonaceous particles and the electric insulating oil are mixed under a normal pressure and thereafter, air or the like is removed from an obtained electrorheological fluid under a reduced pressure. The electrorheological fluid of the present invention preferably has a dielectric breakdown strength of 4.0 kV/mm or more.

Electrorheological fluid

An electro-rheological fluid made from an oil medium and fine particulates by mixing, is highly reliable and in which dielectric breakdown, such as generation of electrical discharge, is very low even when a high voltage is applied. A method of manufacturing the electro-rheological fluid and a method of storing the fluid are also provided. The electro-rheolological fluid includes fine particulates dispersed in an oil medium having an electric insulation property, and has a dielectric breakdown strength of 4 kV/mm or more. When the electro-rheological fluid is placed under a reduced pressure of 10 Pa, foaming does not occur. Alternatively, the electro-reheoleological fluid can contain 20% by volume or more of a gas contained in the oil medium that has a dielectric breakdown strength of 4 kV/mm or more.

Electro-rheological fluid having high dielectric breakdown stength and methods of making and storing the electro-rheological fluid

The present invention is to provide a production method of silicon carbide particles of high quality without generating a sulfur compound in the carbonizing and baking processes. More concretely, a production method of silicon carbide particles comprising a step of mixing at least one kind of a silicon compound, which is liquid at ordinary temperatures, an organic compound having a functional group, which generates carbon by heating and is liquid at ordinary temperatures, and a polymerization or crosslinking catalyst, which can homogeneously dissolve with the organic compound to obtain a mixture, a step of homogeneously solidifying the mixture to obtain solid matter, and a step of heating and baking the solid matter in a non-oxidizing atmosphere, wherein the catalyst is a compound consisting of carbon atoms, hydrogen atoms and oxygen atoms, and has a carboxyl group.

Production method of silicon carbide particles

A sputtering target disk is provided which is comprised of a sintered silicon carbide having a density of 2.9 g/cm,or more and obtained by sintering a uniform mixture of a powder of silicon carbide and a nonmetallic auxiliary sintering agent. The sputtering target disk is advantageously used in a sputtering treatment to form thin films with high purity which are suitable for use in various parts of electronic devices. The sputtering target disk exhibits excellent mechanical properties, electric properties, and durability against uneven wear.

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Kawasaki, Japan

Hiroaki Wada