Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Hiroaki Ueno

Tsuyoshi Tanaka

Yasuhiro Uemoto

Manabu Yanagihara

Daisuke Ueda

Tetsuzo Ueda

Masahiro Hikita

Hidetoshi Ishida

Yutaka Hirose

Tatsuo Morita

Yusuke Kinoshita

Tomohiro Murata

Yasuhiro Yamada

Hiroyuki Sakai

Takahiro Sato

Hiroto Yamagiwa

Masanori Nomura

Kazushi Nakazawa

Satoshi Makioka

A semiconductor device includes: a substrate; a first nitride semiconductor layer above the substrate; a second nitride semiconductor layer above the first nitride semiconductor layer and being greater than the first nitride semiconductor layer in band gap; and a first field-effect transistor including a first source electrode, a first drain electrode, and a first gate electrode that are above the second nitride semiconductor layer, the first source electrode and the first drain electrode being separated from each other, the first gate electrode being disposed between the first source electrode and the first drain electrode. The first field-effect transistor includes a third semiconductor layer that is above the second nitride semiconductor layer in part of a region between lower part of the first source electrode and the first gate electrode, and is separated from the first gate electrode. The third semiconductor layer and the first source electrode are electrically connected.

Semiconductor device

A bidirectional switch element includes: a substrate; an AlGaN layer; an AlGaN layer; a first source electrode; a first gate electrode; a second gate electrode; a second source electrode; a p-type AlGaN layer; a p-type AlGaN layer; an AlGaN layer; and an AlGaN layer. The AlGaN layer is formed over the substrate. The AlGaN layer is formed on the AlGaN layer. The AlGaN layer is interposed between the substrate and the AlGaN layer. The AlGaN layer is interposed between the substrate and the AlGaN layer and has a higher C concentration than the AlGaN layer.

Bidirectional switch element

A semiconductor device comprises a substrate, a semiconductor multilayer structure supported by the substrate, and a first nitride transistor provided in a first area of the semiconductor multilayer structure. The semiconductor multilayer structure comprises first to fourth nitride semiconductor layers. The first nitride transistor comprises part of the first nitride semiconductor layer, part of the second nitride semiconductor layer, part of the third nitride semiconductor layer, part of the fourth nitride semiconductor layer, a first gate electrode electrically connected to the part of the first nitride semiconductor layer, a first source electrode electrically connected to one of two portions in the third nitride semiconductor layer, a first drain electrode electrically connected to the other one of the two portions, and a first substrate electrode electrically connected to the part of the fourth nitride semiconductor layer.

Semiconductor device and method of manufacturing the semiconductor device

A semiconductor device includes a semiconductor layer stackformed on a substrateand having a channel region, a first electrodeA and a second electrodeB formed spaced apart from each other on the semiconductor layer stacka first gate electrodeA formed between the first electrodeA and the second electrodeB, and a second gate electrodeB formed between the first gate electrodeA and the second electrodeB. A first control layerA having a p-type conductivity is formed between the semiconductor layer stackand the first gate electrodeA.

Semiconductor device and method for driving the same

An equivalent circuit includes: a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; a second transistor having a second gate electrode, a second drain electrode, and a second source electrode electrically connected to the first drain electrode; and a charging and discharging circuit which includes a first capacitor having a terminal electrically connected to the second gate electrode and another terminal electrically connected to the second source electrode, and charges and discharges the first capacitor with predetermined time constants.

Equivalent circuit of semiconductor device, simulation method for semiconductor device, and simulation device for semiconductor device

Provided is a simulation method for simulating electrical properties of a bidirectional switch formed as a single element and having a double gate structure. A simulation is performed using an equivalent circuit having a symmetrical structure in which a drain electrode of a JFET and a drain electrode of another JFET are connected via a resistor.

Equivalent circuit of bidirectional switch, simulation method for bidirectional switch, and simulation device for bidirectional switch

A circuit device includes a substrate, and a transmission line. The transmission lineincludes a dielectric filmformed on the substrate, and a signal line formed on the dielectric film. The dielectric filmincludes a nano-composite film in which particles of a first material are dispersed in a second material.

Circuit device including a nano-composite dielectric film

A semiconductor device includes a semiconductor layer stackformed on a substrateand having a channel region, a first electrodeA and a second electrodeB formed spaced apart from each other on the semiconductor layer stack, a first gate electrodeA formed between the first electrodeA and the second electrodeB, and a second gate electrodeB formed between the first gate electrodeA and the second electrodeB. A first control layerA having a p-type conductivity is formed between the semiconductor layer stackand the first gate electrodeA.

In a transistor, an AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type control layer, and a p-type contact layerare formed in this order on a sapphire substrate. The transistor further includes a gate electrodein ohmic contact with the p-type contact layer, and a source electrodeand a drain electrodeprovided on the undoped AlGaN layer. By applying a positive voltage to the p-type control layer, holes are injected into a channel to increase a current flowing in the channel.

Transistor and method for operating the same

A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

Nitride semiconductor device

A semiconductor device includes: a first group-III nitride semiconductor layer formed on a substrate; a second group-III nitride semiconductor layer made of a single layer or two or more layers, formed on the first group-III nitride semiconductor layer, and acting as a barrier layer; a source electrode, a drain electrode, and a gate electrode formed on the second group-III nitride semiconductor layer, the gate electrode controlling a current flowing between the source and drain electrodes; and a heat radiation film with high thermal conductivity which covers, as a surface passivation film, the entire surface other than a bonding pad.

A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic electrode electrically connected to the second surface of the semiconductor layer. The semiconductor layer has, in at least the upper portion thereof, highly-resistive regions selectively formed to have a high resistance.

It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in I, and further achieve an improvement in gand a reduction in gate leakage current. In order to keep a thin barrier layeron an operation layerof a substratedirectly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high I, it is configured in such a way that a thickness of the barrier layercan be increased by the semiconductor layerbetween gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Ias compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating filmwith a dielectric constant higher than that of the barrier layer is further inserted between a gate electrodeand the barrier layers, so that an improvement in gand a reduction in gate leakage current can be achieved.

Growing community of inventors

Osaka, Japan

Hiroaki Ueno