Omron Corporation

Kaneka Corporation

Hiroaki Ueda

Heita Nada

Yoshimi Azuma

Sadahito Otsu

Kenji Yamamoto

Takashi Kuchiyama

Hironori Hayakawa

Kozo Kondo

Yuji Motohara

Hideki Harada

Kazuhisa Danno

Takahisa Fujimoto

Daisuke Wakabayashi

Signal transfer device

The disclosure provides a control device and a control method capable of properly executing a termination process even in a case where a power shutdown occurs again during the execution of a restart process. A programmable logic controller includes a central processing unit module, a power shutdown detection part, a power supply holding circuit, and a power detection part. The central processing unit module executes the termination process with the power supplied from the power supply holding circuit in a case where the power shutdown detection part has detected the power shutdown, and the central processing unit module executes a reboot process on condition that the power supply holding circuit holds a power amount equal to or greater than a reference amount based on the power detection part in a case where the power shutdown detection part has detected a return of the power supply from the power shutdown.

Control device and control method

There is expected a technique capable of determining a power supply state with respect to an arithmetic unit according to a connection status with a power supply unit. The arithmetic unit includes a state management circuit outputting a state signal indicating whether or not supply of power from the power supply circuit is valid. The state management circuit of the arithmetic unit determines a value of the state signal based on a voltage of a second port, a voltage of a first port, and a signal indicating whether or not the power supply unit exists.

Arithmetic unit and control apparatus

There is expected a technique capable of, in the case where supply of power to a control apparatus is cut off, performing appropriate processing on other units. The control apparatus receives supply of power from an external power supply to a power supply unit and supplies power to a main arithmetic unit and a secondary arithmetic unit. The power supply unit is configured to, when receiving a detection signal indicating that a voltage of power supplied to a plurality of arithmetic units falls below a predetermined threshold value, send a shutdown command onto a local bus via a bus master part, and also send the shutdown command to the secondary arithmetic unit.

Control apparatus

Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Substrate with transparent electrode and method for producing same

A power supply circuit in a PLC includes a first node that receives a DC voltage with a first level, a second node that outputs a voltage for driving a control unit, wiring connecting the first and second nodes, a first rectifier on the wiring having a forward direction from the first node to the second node, a charger for charging and discharging, a first converter that converts a discharging voltage from the charger into a DC voltage with a second level lower than the first level and outputs the voltage, and a second rectifier connected between an output of the first converter and the second node to have a forward direction from the first converter to the second node.

Programmable logic controller

Gateway

Programmable controller with safety controller

Programmable controller

Safety controller with gateway

Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization during a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

For use in a method for producing a transparent conductive film having an ITO transparent electrode layer, a roll-to-roll sputtering apparatus includes at least three deposition chambers adjacent to a deposition roll. While a transparent film substrate is conveyed on the deposition roll, a base conductive layer is formed by sputtering deposition in one or more deposition chambers, and a main conductive layer is formed thereon by successive sputtering deposition in two or more film deposition chambers. The applied power in the deposition chambers where the underlying conductive layer is formed is 5% to 20% of the total of the applied power in each the deposition chamber where the underlying or main conductive layer is formed. In formation of the main conductive layer, the applied power in the deposition chamber where the ITO thin film is first deposited is less than the applied power in the next deposition chamber.

Method for producing transparent conductive film

A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688&#xd7;Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3&#xd7;10&#x3a9;cm.

Method for producing substrate with transparent electrode, and substrate with transparent electrode

An electronic device includes a first circuit board and a second circuit board arranged to have their first main surfaces facing each other, and a casing containing the first and second circuit boards. The first circuit board has the first main surface having a first electronic component with a mounting height from the first main surface toward the second circuit board greater than a distance between the first and second circuit boards. The second circuit board has an opening or a cutout as a first hollow portion facing the first electronic component. The first hollow portion receives a part of the first electronic component.

Electronic device

A substrate is provided with a transparent electrode in which the pattern is hardly visible even when the transparent electrode layer has been patterned, and a method for manufacturing thereof is provided. On at least one of the surfaces of a transparent film, a first, second, and third dielectric material layer, and a patterned transparent electrode layer are included, in this order, each preferably having a film thickness and refractive index within a specific range. The first and third dielectric material layers are silicon oxide layers containing SiOand SiOas main components, respectively. The second dielectric material layer is a metal oxide layer containing a metal oxide. The transparent electrode layer is a conductive metal oxide layer containing an indium-tin composite oxide as a main component. The refractive indexes of the first (n), second (n), and third (n) dielectric material layers satisfy the relationship n3&#x3c;n1&#x3c;n2.

Growing community of inventors

Otsu, Japan

Hiroaki Ueda