Seiko Epson Corporation

Fujitsu Semiconductor Limited

Hiroaki Tamura

Sayaka Yamasaki

Tatsuo Sawasaki

Teruo Tagawa

Hiromu Miyazawa

Masao Nakayama

Eiji Natori

Jiro Kato

Koichi Morozumi

Kazumasa Hasegawa

Toshiki Hara

Masaki Kurasawa

Satoshi Denda

Hideki Yamawaki

Koichi Kobayashi

Hiroyuki Mitsui

Shuji Tsuruta

There is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a vibration region that overlaps the pressure chamber in plan view. The piezoelectric element overlaps the vibration region in plan view. The diaphragm has a crystal plane {110} of a single crystal silicon base, or a crystal plane of a single crystal silicon base of which a Young's modulus and a Poisson's ratio vary according to a crystal orientation.

Piezoelectric device, liquid discharging head, and liquid discharging apparatus

A piezoelectric element includes: a piezoelectric body; and a vibrating plate including single crystal silicon having anisotropy having orientation with a relatively high Young's modulus and orientation with a relatively low Young's modulus (hereinafter, referred to as 'low Young's modulus orientation') as a vibrating material, in which the piezoelectric body and the vibrating plate are laminated on each other so that the low Young's modulus orientation is in a direction along a high expansion and contraction direction among a direction where a degree of expansion and contraction caused according to a support structure of the piezoelectric body is relatively high (hereinafter, referred to as 'high expansion and contraction direction') and a direction where a degree thereof is relatively low.

Piezoelectric element, ultrasonic probe, ultrasonic measurement device, and manufacturing method of piezoelectric element

A piezoelectric element includes: a piezoelectric body; and a vibrating plate including single crystal silicon having anisotropy having orientation with a relatively high Poisson's ratio and orientation with a relatively low Poisson's ratio (hereinafter, referred to as 'low Poisson's ratio orientation') as a vibrating material, in which the piezoelectric body and the vibrating plate are laminated on each other so that the low Poisson's ratio orientation is in a direction along a high expansion and contraction direction among a direction where a degree of expansion and contraction caused according to a support structure of the piezoelectric body is relatively high (hereinafter, referred to as 'high expansion and contraction direction') and a direction where a degree thereof is relatively low.

There is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The piezoelectric element is disposed on the diaphragm so as to overlap an inner periphery of the pressure chamber in plan view, and has an inner edge on a center side of the pressure chamber with the inner periphery of the pressure chamber being sandwiched within the piezoelectric element in plan view. A shape of the inner edge of the piezoelectric element is such that in the smallest first rectangle, which includes the inner edge in plan view.

There is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Young's modulus varies according to a direction in the crystal plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, a first Young's modulus in a first direction, out of Young's modulus in the crystal plane, is higher than a second Young's modulus in the crystal plane in a second direction intersecting the first direction. A width of the piezoelectric element in the first direction is larger than a width of the piezoelectric element in the second direction.

A piezoelectric element, in which a piezoelectric body, and a vibrating plate having [111]-oriented single crystal silicon as a vibrating material are laminated is provided. In addition, a manufacturing method of a piezoelectric element including: cutting out a vibrating material to be used in the vibrating plate from a [111]-oriented single crystal silicon wafer; and laminating a piezoelectric body and the vibrating plate is provided.

A piezoelectric element comprises a piezoelectric layer and an electrode provided to the piezoelectric layer. The piezoelectric layer has a Perovskite-type structure containing bismuth and iron, and includes nitrogen in an oxygen site of the Perovskite-type structure.

Piezoelectric element, liquid ejecting head, liquid ejecting apparatus

A piezoelectric element comprising a first electrode, a piezoelectric layer which is composed of a metal oxide containing lead, zirconium and titanium and which formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer has negatively charged Pb&#x2014;O complex defects and positively charged Pb&#x2014;O complex defects, the concentration of the negatively charged Pb&#x2014;O complex defects being higher than the concentration of the positively charged Pb&#x2014;O complex defects.

Liquid ejecting head and liquid ejecting apparatus

A ferroelectric memory device includes: a substrate; a first insulating film formed above the substrate, the first insulating film including a plug; a ferroelectric capacitor formed above the first insulating film; the ferroelectric capacitor including a lower electrode formed above the plug, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film; a hydrogen barrier film formed on the ferroelectric capacitor, a first thickness of the hydrogen barrier film formed on the upper electrode being greater than a second thickness of the hydrogen barrier film formed on a side surface of the ferroelectric capacitor; and the hydrogen barrier film including a first hydrogen barrier film and the second hydrogen barrier film, the first hydrogen barrier film formed on an upper surface of the upper electrode and a side surface of the upper electrode, the second hydrogen barrier film formed above the ferroelectric capacitor.

Ferroelectric memory device and method of manufacturing the same

A method of manufacturing a ferroelectric memory device includes: forming a hydrogen barrier film which covers a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, wherein a thickness of an area of the hydrogen barrier film provided on the upper electrode is made greater than a thickness of an area of the hydrogen barrier film provided on a sidewall of the ferroelectric capacitor by forming the area of the hydrogen barrier film provided on the upper electrode in a plurality of layers.

A manufacturing method for a ferroelectric memory device including: forming a lower electrode; forming an electrode oxide film composed of an oxide of a constituent material of the lower electrode; forming a first ferroelectric layer on the lower electrode by reaction between organometallic source material gas and oxygen gas; forming a second ferroelectric layer on the first ferroelectric layer by reaction between organometallic source material gas and oxygen gas; and forming an upper electrode on the second ferroelectric layer. In the method, the oxygen gas in the forming of the first ferroelectric layer is in an amount less than the amount of oxygen necessary for reaction of the organometallic source material gas. In the method, the oxygen gas in the forming of the second ferroelectric layer is in an amount greater than the amount of oxygen necessary for reaction of the organometallic source material gas.

Manufacturing method for ferroelectric memory device

A ferroelectric memory device is equipped with a ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric layer between the first and second electrodes, and the ferroelectric memory device includes: a wiring that is connected to one of the first electrode and the second electrode, wherein the wiring includes a first wiring layer composed of titanium nitride oriented along a &#x3c;111&#x3e; direction, and a second wiring layer formed on the first wiring and composed of titanium aluminum nitride orientated along a &#x3c;111&#x3e; direction.

Ferroelectric memory device and method for manufacturing ferroelectric memory device

A method for manufacturing a ferroelectric memory includes the steps of: forming an iridium film above a substrate; forming an iridium oxide layer on the iridium film; changing the iridium oxide layer into an amorphous iridium layer; oxidizing the amorphous iridium layer to form an iridium oxide portion; forming a ferroelectric film on the iridium oxide portion by a MOCVD method; and forming an electrode on the ferroelectric film.

Method for manufacturing ferroelectric memory

A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.

Ferroelectric capacitor and its manufacturing method and ferroelectric memory device

A method for manufacturing a semiconductor device, the method including the steps of: (a) forming a titanium layer above a substrate; (b) forming a barrier layer above the titanium layer; (c) changing the titanium layer to a titanium nitride layer by conducting a heat treatment in a nitrogen containing atmosphere; (d) forming a first electrode above the barrier layer; (e) forming a ferroelectric layer above the first electrode; and (f) forming a second electrode above the ferroelectric layer.

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Shimosuwa-machi, Japan

Hiroaki Tamura