Dainippon Screen Mfg. Co., Ltd.

Hiroaki Sugimoto

Seiichiro Okuda

Masanobu Sato

Takuya Kuroda

Shuichi Yasuda

Kenya Morinishi

Sadao Hirae

Masayoshi Imai

Akio Hashizume

Hiroki Tsujikawa

Kazuo Nakajima

Masaru Kitagawa

Takeshi Yoshida

Kenji Sugimoto

Toyohide Hayashi

Masaya Asai

Hiroshi Kato

Tadashi Sasaki

Noriaki Yokono

The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Substrate processing apparatus

A soft spray nozzle discharging a cleaning mist is vertically directed and fixed to an arm. A rinse nozzle discharging rinsing deionized water for suppressing obstruction is vertically fixed to the arm at a prescribed distance from the soft spray nozzle. During cleaning, it follows that both nozzles discharge detergents while keeping relative layout relation. Therefore, the discharged cleaning mist and rinsing deionized water do not interfere with each other before reaching the substrate but the used detergents are entirely horizontally splashed and recovered in a cup. Thus, the cleaning mist is prevented from scattering and adhering to the periphery.

Substrate cleaning apparatus and substrate cleaning method

A substrate processing apparatus includes a container in which a heating plate, a discharge nozzle for discharging a vapor of organic solvent, and a discharge nozzle for supplying a process gas and a cooling gas are provided. A pump in communication with an exhaust outlet of the container exhausts an atmosphere from the container to reduce pressure in the container. Therefore, the substrate processing apparatus is capable of performing (1) the process of drying a substrate in a reduced-pressure atmosphere by the use of the vapor of organic solvent, and (2) the process of drying the substrate in the reduced-pressure atmosphere by heating, to thereby efficiently dry the substrate.

Substrate processing apparatus for drying substrate

A substrate treating apparatus includes a spin chuck for supporting a substrate to be rotatable in a plane including a principal surface of the substrate, a motor for rotating the spin chuck, a circulating pump for circulating a removal liquid and transmitting the removal liquid to a first nozzle, and a heater for heating the removal liquid in circulation. When removing a reaction product, the spin chuck is rotated at a rotational frequency of at least 100 rpm and not exceeding 3,000 rpm, and the first nozzle supplies the removal liquid at a rate of at least 50 ml per minute to the surface of the substrate supported and rotated by the spin chuck.

Substrate treating apparatus with circulating and heating mechanism for removal liquid

In a substrate treating unit, a removal liquid supplying mechanism supplies a removal liquid to the surface of a substrate. In order to retain the removal liquid on the surface of the substrate for a fixed time, a spin chuck is operated to spin the substrate at such a low speed as to retain the removal liquid on the substrate, or spins the substrate intermittently, or temporarily stops spinning of the substrate. Thus, treatment with the removal liquid progresses without a further supply of the removal liquid, thereby restraining consumption of the removal liquid.

Substrate treating method and substrate treating apparatus

A removal liquid is supplied to a substrate on which a thin film formed is patterned by dry etching using a resist film as a mask, and cleaning is made with de-ionized water, thereby removing a reaction product generated on the surface of the substrate. After that, the processed substrate is heated, thereby completely drying the substrate from which the reaction product has been eliminated.

An atmosphere concentration monitoring system includes multiple measurement ports for collecting atmospheric gas, a port selector for switching the multiple measurement ports, a concentration measurement unit for sampling the atmospheric gas through the selected measurement port and measuring the concentration of a specific substance contained in the sampled atmospheric gas. A different set of measurement conditions are established for each of the measurement ports. The port selector and the concentration measurement unit are controlled according to the different sets of measurement conditions. A life determination device includes a flow rate determination unit for measuring a flow rate of the atmospheric gas passing through the atmosphere processing unit. A throughput of the atmosphere processing unit is determined by integrating, with respect to time, a product of the flow rate and a difference between the upstream and downstream concentrations. The life of the atmosphere processing unit is determined as a function of the throughput.

Atmosphere concentration monitoring for substrate processing apparatus

The present invention provides a degassing apparatus having a temperature regulating function. The degassing apparatus includes a number of gas permeating tubes for enabling a processing solution to flow through one of the two flow paths partitioned by gas permeating membranes that allow permeation of a gas but prevent permeation of a liquid, while enabling warm water to flow through the other flow path. A temperature regulator regulates the temperature of the warm water fed to the gas permeating tubes, and a gas suction pump sucks the gas from the warm water.

Method and apparatus for degassing processing solution for substrates

A method of processing a substrate includes the steps of developing a substrate having a photo-sensitive resin film formed on its surface; washing the substrate by supplying washing liquid to the surface of the substrate, and rotating the substrate on a perpendicular axis in a horizontal plane and thereby drying the surface of the substrate, and atmosphere in which the substrate is placed is adjusted to be at a pressure lower than the atmospheric pressure in the step of drying the surface of the substrate. Instead of or in addition to this, washing liquid in which prescribed gas is dissolved may be used in the step of washing the substrate. In this case, in the step of drying the surface of the substrate, washing liquid supplied to the surface of the substrate is preferably supersaturated with gas. A substrate processing apparatus including a controller for implementing such a method is also disclosed.

Growing community of inventors

Kyoto, Japan

Hiroaki Sugimoto