Hoya Corporation

Hiroaki Shishido

Osamu Nozawa

Ryo Ohkubo

Atsushi Kominato

Masahiro Hashimoto

Hiroyuki Iwashita

Takenori Kajiwara

Takashi Uchida

Kazuya Sakai

Atsushi Matsumoto

Kazutake Taniguchi

Toshiyuki Suzuki

Yasushi Okubo

Morio Hosoya

Hitoshi Maeda

Takahiro Hiromatsu

Yasutaka Horigome

Toshiharu Kikuchi

Seishi Shibayama

Provided is a mask blank. The mask blank has a structure where a thin film for pattern formation, a first hard mask film, and a second hard mask film are stacked in this order on a main surface of a substrate, the thin film for pattern formation contains a transition metal, the first hard mask film contains oxygen and one or more elements selected from silicon and tantalum, the second hard mask film contains a transition metal, a content of transition metal of the second hard mask film is less than the content of transition metal of the thin film for pattern formation, a region where the first hard mask film is formed on the main surface is smaller than a region where the thin film for pattern formation is formed, and the second hard mask film and the thin film for pattern formation are in contact with each other at least in part.

Mask blank, method of manufacturing transfer mask, and method of manufacturing semiconductor device

A mask blankhas a structure in which a pattern-forming thin filmand a hard mask filmare formed on a transparent substratein this order. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV. An N1s narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak below a detection lower limit value. In the hard mask filma content ratio (atomic %) of silicon and oxygen is Si:O=1:less than 2.

Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

A mask blank including a light shielding film pattern having high ArF light fastness. The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.

Mask blank, transfer mask, and method for manufacturing semiconductor device

A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

Mask blank, method of manufacturing imprint mold, method of manufacturing transfer mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device

Mask blank, method for manufacturing reflective mask, and method for manufacturing semiconductor device

The phase shift film has a function to transmit an exposure light of a KrF excimer laser at a transmittance of 2% or more, and a function to generate a phase difference of 150 degrees or more and 210 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for a same distance as a thickness of the phase shift film, in which the phase shift film has a structure where a lower layer and an upper layer are stacked in order from a side of the transparent substrate, in which a refractive index nL of the lower layer at a wavelength of the exposure light and a refractive index nU of the upper layer at a wavelength of the exposure light satisfy a relation of nL&#x3e;nU, in which an extinction coefficient kL of the lower layer at a wavelength of the exposure light and an extinction coefficient kU of the upper layer at a wavelength of the exposure light satisfy a relation of kL&#x3e;kU; and in which a thickness dL of the lower layer and a thickness dU of the upper layer satisfy a relation of dL&#x3c;dU.

Mask blank, phase shift mask, and method of manufacturing semiconductor device

Provided is a mask blank () for manufacturing a phase shift mask, the mask blank enabling formation of a high-precision and fine pattern on a light shielding film. The mask blank () in which a phase shift film () made of a material containing silicon, a light shielding film () made of a material containing chromium, oxygen, and carbon, and a hard mask film () made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate () is characterized in that the light shielding film () is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film () side and in a region close thereto, the light shielding film () has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film () excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.

Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below.&#x2264;0.0733&#xd7;+0.4069&#xd7;+1.0083 &#x2003;&#x2003;Formula (1)&#x2265;29.316&#xd7;&#x2212;92.292&#xd7;+72.671 &#x2003;&#x2003;Formula (2)

Mask blank, transfer mask, and method of manufacturing semiconductor device

Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes nand nof the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n&#x3c;n. Extinction coefficients kand kof the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k&#x3c;k. Film thicknesses dand dof the first layer and the second layer, respectively, satisfy the relation d&#x3c;d.

Mask blank, phase-shift mask, and method of manufacturing semiconductor device

In the present invention, an etching stopper film (), a light-blocking film () comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film () are laminated in that order on a translucent substrate (). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.

Provided is a mask blank for a phase shift mask including an etching stopper film. The mask blank has a structure where a transparent substrate has stacked thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index nof 1.5 or more for light of 193 nm wavelength and an extinction coefficient kof 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index nof 2.5 or more and 3.1 or less for light of 193 nm wavelength and an extinction coefficient kof 0.4 or less for light of 193 nm wavelength, and the refractive index nand the extinction coefficient ksatisfy at least one of a set of specified conditions.

Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below.&#x2264;0.0733&#xd7;+0.4069&#xd7;+1.0083&#x2003;&#x2003;Formula (1)&#x2265;29.316&#xd7;&#x2212;92.292&#xd7;+72.671&#x2003;&#x2003;Formula (2)

A mask blank, which is capable of being formed with high transfer accuracy when a hard mask film pattern is used as a mask, and even when the mask blank includes a chromium-based light shielding film. A light-semitransmissive film, a light shielding film, and a hard mask film are laminated in the stated order on a transparent substrate. The light-semitransmissive film contains silicon, and the hard mask film contains any one or both of silicon and tantalum. The light shielding film has a laminate structure of a lower layer and an upper layer, and contains chromium. The upper layer has a content of chromium of 65 at % or more, and a content of oxygen of less than 20 at %, and the lower layer has a content of chromium of less than 60 at %, and a content of oxygen of 20 at % or more.

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Tokyo, Japan

Hiroaki Shishido