Tokyo Ohka Kogyo Co., Ltd.

Suntory Holdings Limited

Daito Chemix Corporation

Toyko Ohka Kogyo Co., Ltd.

Tokyo Ohka Tokyo Co., Ltd.

Hiroaki Shimizu

Tsuyoshi Nakamura

Yoshiyuki Utsumi

Hideo Hada

Hideto Nito

Takahiro Dazai

Akiya Kawaue

Kensuke Matsuzawa

Jiro Yokoya

Kyoko Ohshita

Takehiro Seshimo

Masaru Takeshita

Daiju Shiono

Keita Ishiduka

Tsuyoshi Kurosawa

Tomoyuki Hirano

Takeshi Iwai

Takayoshi Mori

Yasuhiro Yoshii

Komei Hirahara

Sanae Furuya

Naoto Motoike

Yuichi Suzuki

Fumitake Kaneko

Yoshiaki Yokoo

Yoshihiro Nakao

Shogo Matsumaru

Makoto Nakajima

Syogo Matsumaru

Hiroki Furuta

Morio Mitsuhashi

Yoshitaka Komuro

Toshiyuki Ogata

Taku Hirayama

Ryotaro Hayashi

Junichi Tsuchiya

Naotaka Kubota

Yohei Kinoshita

Sho Abe

Shinichi Hidesaka

Hirokuni Saito

Toshiharu Shimamaki

Natsuko Maruyama

Syo Abe

Kenshin Niwa

Seihin Shu

Kitaro Oka

Chiseko Sakuma

Yoshiyuki Utumi

Kyoko Oshita

A roasted plant extraction apparatus is provided which is capable of selectively reducing excessive bitterness in an extract liquid obtained by water extraction from a roasted plant raw material while preserving desirable flavor ingredients and body. A beverage extraction apparatus includes a granule containing part adapted to contain granules for extraction of a beverage, a pouring device for pouring an extraction solvent into the granule containing part from a first direction, and a collecting device for collecting an extract liquid extracted by means of the extraction solvent. The granule containing part comprises a detachable restraining member for placing the granules in a substantially sealed state. The beverage extraction apparatus further comprises a rotary mechanism for rotating the granule containing part.

Beverage extraction apparatus

A roasted plant extraction apparatus is provided which is capable of selectively reducing excessive bitterness in an extract liquid obtained by water extraction from a roasted plant raw material while preserving desirable flavor ingredients and body. A beverage extraction apparatus includes a granule containing part containing granules for extraction of a beverage, first pouring device for pouring an extraction solvent into the granule containing part from a first direction, and collecting device for collecting a coffee extract liquid extracted by device of the extraction solvent at the side of layers of the coffee granules corresponding to the first direction. The granule containing part is provided with a detachable restraining member for placing the granules for extraction of a beverage in a substantially sealed state.

A method of forming a resist pattern, including forming a resist film by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; subjecting the resist film to exposure baking the exposed resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

Resist composition and method of forming resist pattern

A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.

Method of forming resist pattern

A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).

A resist composition used in a method of forming a resist pattern including applying a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component to a substrate to form a resist film; subjecting the resist film to exposure; baking after subjecting the resist film to exposure, wherein at an exposed portion of the resist film, the base generated from the photo-base generator component upon exposure and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of acid provided to the resist film in advance; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

A resist composition including a base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon exposure, the acid-generator including an acid generator consisting of a compound represented by general formula (b1-1) shown below: In which Rrepresents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Qand Qindependently represents a single bond or a divalent linkage group; Yrepresents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Zrepresents an organic cation exclusive of an ion represented by general formula (w-1).

Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern

A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1-1) shown below: wherein Rrepresents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Qand Qindependently represents a single bond or a divalent linkage group; Yrepresents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Zrepresents an organic cation exclusive of an ion represented by general formula (w-1).

There are provided a method of forming a resist pattern includes: a step () in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step () in which the resist filmis subjected to exposure; a step () in which baking is conducted after the step (); and a step () in which the resist filmis subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portionof the resist filmhas been dissolved and removed, and the resist composition used in the step ().

A resist composition which generates a base upon exposure and exhibits increased solubility in an alkali developing solution under the action of acid, and the resist composition including: a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; an acidic compound component (G1) including a nitrogen-containing cation having a pKa value of 7 or less and a counteranion; and a buffer component (K) including a nitrogen-containing cation and a counteranion being a conjugate base for the acid having a pKa value of 0 to 5.

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, a basic-compound component (C) and an acid-generator component (B) which generates acid upon exposure, the component (B) including a compound represented by formula (b1), and the component (C) including at least one compound represented by formulas (c1) to (c3) (wherein Zrepresents a ring skeleton-containing hydrocarbon group, Qrepresents a divalent linking group containing oxygen, Yrepresents a fluorinated alkylene group, Mrepresents an organic cation, Rrepresents a fluorinated alkyl group or a hydrocarbon group, Land Lrepresents a sulfonium or an iodonium, Zrepresents a hydrogen atom or a hydrocarbon group, Yrepresents a single bond or a divalent linking group containing no fluorine, Rrepresents an organic group, Yrepresents an alkylene group or an arylene group; and Rf represents a fluorine-containing hydrocarbon group). 

A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.

A method of forming a resist pattern, including: step (1) in which a resist composition containing a base component (A) that exhibits increased solubility in an alkali developing solution and a compound represented by general formula (C1) is applied to a substrate to form a resist film, step (2) in which the resist film is subjected to exposure, step (3) in which baking is conducted after step (2), and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern; and the resist composition used in step (1): wherein Rrepresents a group which forms an aromatic ring together with the two carbon atoms bonded to the Rgroup; Rrepresents a hydrogen atom or a hydrocarbon group; and Rrepresents a hydrogen atom, a carboxy group or a hydrocarbon group of 1 to 15 carbon atoms.

A resist composition including a base component (A) which exhibits changed solubility in a developing solution, and an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity, wherein the acidic compound component (J) contains a compound represented by formula (J1) [in the formula, Rrepresents H, OH, halogen atom, alkoxy group, hydrocarbon group or nitro group; m represents 0-4; n represents 0-3; Rx represents H or hydrocarbon group; Xrepresents divalent linking group; Xrepresents H or hydrocarbon group; Y represents single bond or C(O); A represents alkylene group which may be substituted with oxygen atom, carbonyl group or alkylene group which may have fluorine atom; Qand Qrepresents F or fluorinated alkyl group; and Wrepresents primary, secondary or tertiary ammonium coutercation which exhibits pKa smaller than pKa of HN(X)&#x2014;X&#x2014;Y&#x2014;O-A-C(Q)(Q)&#x2014;SOgenerated by decomposition upon exposure]. 

Resist composition, method of forming resist pattern and novel compound

A method of forming a resist pattern, the method including: forming a resist film on a substrate using a resist composition containing a base component (A) that exhibits reduced solubility in an organic solvent under the action of acid, an acid generator component (B) that generates acid upon exposure and a fluorine-containing polymeric compound (F), exposing the resist film, and patterning the resist film by negative tone development using a developing solution containing the organic solvent, thereby forming a resist pattern, wherein the base component (A) contains a resin component (A1) containing a structural unit (a1) derived from an acrylate ester, the dissolution rates of (A1) and (F) in the developing solution are each at least 10 nm/s, and the absolute value of the difference in the dissolution rates of (A1) and (F) in the developing solution is not more than 80 nm/s.

Method of forming resist pattern and negative tone-development resist composition

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Kawasaki, Japan

Hiroaki Shimizu