Sony Corporation

Sony Semiconductor Solutions Corporation

Hiroaki Sei

Kazuhiro Ohba

Minoru Ikarashi

Takeyuki Sone

Seiji Nonoguchi

Shuichiro Yasuda

Akira Kouchiyama

Masayuki Shimuta

Katsuhisa Aratani

Tetsuya Mizuguchi

Naomi Yamada

Jun Okuno

A storage device includes a first electrode, a second electrode, and a storage layer. The second electrode is disposed to oppose the first electrode. The storage layer is provided between the first electrode and the second electrode, and includes one or more chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S), transition metal, and oxygen. The storage layer has a non-linear resistance characteristic, and the storage layer is caused to be in a low-resistance state by setting an application voltage to be equal to or higher than a predetermined threshold voltage and is caused to be in a high-resistance state by setting the application voltage to be lower than the predetermined threshold voltage to thereby have a rectification characteristic.

Storage device and storage unit with a chalcogen element

A switch device according to an embodiment of the present disclosure includes a first electrode; a second electrode opposed to the first electrode; and a switch layer including selenium (Se), at least one kind of germanium (Ge) or silicon (Si), boron (B), carbon (C), (Ga), and arsenic (As), and provided between the first electrode and the second electrode.

Switch device, storage apparatus, and memory system incorporating boron and carbon

A switch device includes: a first electrode; a second electrode opposed to the first electrode; and a switch layer provided between the first electrode and the second electrode, and the switch layer includes one or more kinds of chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S) and one or more kinds of first elements selected from phosphorus (P) and arsenic (As), and further includes one or both of one or more kinds of second elements selected from boron (B) and carbon (C) and one or more kinds of third elements selected from aluminum (Al), gallium (Ga), and indium (In).

Switch device, storage apparatus, and memory system

There is provided a selection device that includes a first electrode, a second electrode opposed to the first electrode, a semiconductor layer provided between the first electrode and the second electrode, and including at least one kind of chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), and at least one kind of first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si), and a first heat bypass layer provided at least in a portion around the semiconductor layer between the first electrode and the second electrode and having higher thermal conductivity than the semiconductor layer.

Selection device and storage apparatus

Provided is a circuit element that includes paired inert electrodes, and a switch layer provided between the paired inert electrodes, that functions as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element

There are provided a memory device and a memory unit that make it possible to improve retention property of a resistance value in low-current writing. The memory device of the technology includes a first electrode, a memory layer, and a second electrode in order, in which the memory layer includes an ion source layer containing one or more transition metal elements selected from group 4, group 5, and group 6 in periodic table, one or more chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or both of boron (B) and carbon (C), and a resistance change layer having resistance that is varied by voltage application to the first electrode and the second electrode.

Memory device and memory unit

A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second electrode. The switch layer contains a chalcogen element. The switch layer includes a first region and a second region which have different composition ratios of one or more of chalcogen elements or different types of the one or more of chalcogen elements. The first region is provided close to the first electrode. The second region is provided closer to the second electrode than the first region.

Switch device and storage unit

A switch device according to an embodiment of the technology includes a first electrode, a second electrode that faces the first electrode, and a switch layer provided between the first electrode and the second electrode. The switch layer includes a chalcogen element. The switch device further includes a diffusion suppressing layer that is in contact with at least a portion of a surface of the switch layer, and suppresses diffusion of oxygen into the switch layer.

A switch device includes: a first electrode; a second electrode disposed to oppose the first electrode; a switch layer provided between the first electrode and the second electrode, and including at least one or more kinds of chalcogen elements and one or more kinds of first elements out of the one or more kinds of chalcogen elements, the one or more kinds of first elements, and a second element including one or both of oxygen (O) and nitrogen (N), the one or more kinds of chalcogen elements being selected from tellurium (Te), selenium (Se), and sulfur (S), and the one or more kinds of first elements being selected from boron (B), carbon (C), and silicon (Si).

Switch device and storage unit having a switch layer between first and second electrodes

There are provided a storage device and a storage unit capable of improving retention performance of an intermediate resistance value in writing at a low current, and a storage device and a storage unit capable of reducing random telegraph noise. A storage device of one embodiment of the present technology includes a first electrode, a storage layer, and a second electrode in this order, and the storage layer includes: an ion source layer including one or more kinds of chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or more kinds of transition metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table; and a resistance change layer including boron (B) and oxygen (O). A storage device of another embodiment of the present technology includes the above-described ion source layer and a resistance change layer including one or more kinds of transaction metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table, and oxygen (O).

Storage device and storage unit with ion source layer and resistance change layer

A switch device includes: a first electrode; a second electrode arranged to face the first electrode; and a switch layer provided between the first electrode and the second electrode. The switch layer includes a first layer containing a chalcogen element, and a second layer containing a high resistance material.

A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements selected from the group of Groups 4, 5, and 6 elements of the Periodic Table.

Storage device and storage unit

A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes.

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Kanagawa, Japan

Hiroaki Sei