Toyota Jidosha Kabushiki Kaisha

National Institute of Advanced Industrial Science and Technology

Kyoto University

Denso Corporation

Hiroaki Saitoh

Akinori Seki

Tsunenobu Kimoto

Katsunori Danno

Akiyoshi Chayahara

Yoshiaki Mokuno

Hideaki Yamada

Hitoshi Umezawa

Nobuteru Tsubouchi

Shinya Ohmagari

Yoichiro Kawai

Fumiaki Kawai

A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cmdue to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 &#x3bc;m or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

Stack comprising single-crystal diamond substrate

A method of production of a SiC single crystal uses the solution method to prevent the formation of defects due to seed touch, i.e., causing a seed crystal to touch the melt, and thereby cause growth of a SiC single crystal reduced in defect density. According to the method, a SiC seed crystal touches a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal. The method includes making the SiC seed crystal touch the melt, and then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

Method of production of sic single crystal

A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate.

Gettering process for producing semiconductor device

A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)&#x2267;5&#xd7;10/cm; and 0.01%&#x2266;(Concentration of Ti)/(Concentration of Al)&#x2266;20%. It is more preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)&#x2267;5&#xd7;10/cm; and 1&#xd7;10/cm&#x2266;(Concentration of Ti)&#x2266;1&#xd7;10/cm.

P-type SiC semiconductor

Growing community of inventors

Mishima, Japan

Hiroaki Saitoh