Nissan Chemical Industries Limited

Hiroaki Okuyama

Keisuke Hashimoto

Tetsuya Shinjo

Yasunobu Someya

Daigo Saito

Hideki Musashi

Masakazu Kato

Ryo Karasawa

A method for producing a semiconductor device, which includes forming an underlayer film on a semiconductor substrate with a resist underlayer film forming composition that contains a solvent, and a polymer containing a unit structure of Formula (2):O&#x2014;Ar&#x2014;O&#x2014;Ar-T-Ar&#x2003;&#x2003;Formula (2)where Ar, Ar, and Arare individually a Carylene group or an organic group containing a heterocyclic group; at least one of Arand Aris a phenylene group; and T is a carbonyl group. The resist underlayer film forming composition has a solid content of 0.1 to 70 mass % of a total mass of the composition.

Resist underlayer film forming composition for lithography containing polyether structure-containing resin

There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio:  A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin

There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R, R, R, and Rmay be a hydrogen atom, Rmay be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

Carbazole novolak resin

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Toyama, Japan

Hiroaki Okuyama