Rohm Co., Ltd.

Hiroaki Ohta

Kuniyoshi Okamoto

Hirotaka Otake

Hidemi Takasu

Taketoshi Tanaka

Shinichi Kohda

Toshio Nishida

Daisuke Nakagawa

Shin Egami

Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiringis formed on a supporting substrate. A green LDand a red LDare bonded to the metal wiring. Each of the green LDand the red LDis a laser diode element formed of a semiconductor having a layered structure. One of a positive electrode and a negative electrode of the element is bonded to the metal wiring, and the other electrode is connected to a lead wireor a lead wire. The green LDis formed of a GaN-based semiconductor laser diode having a nonpolar plane or a semipolar plane as a main surface for crystal growth. The red LDis formed of an AlInGaP-based semiconductor laser diode.

Laser light emitting device

The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle &#x3b8; in the c-axis direction preferably satisfies &#x2212;1&#xb0;&#x3c;&#x3b8;&#x3c;0&#xb0;.

Semiconductor light-emitting element and method for fabrication the same

The semiconductor device includes a P-type group III-V nitride semiconductor layer, an N-type group III-V nitride semiconductor layer, and an electrode in contact with both of the P-type group III-V nitride semiconductor layer and the N-type group III-V nitride semiconductor layer. The electrode includes a first electrode portion made of a first conductive material, and a second electrode portion, made of a second conductive material different from the first conductive material, bonded to the first electrode portion. The first electrode portion is in contact with the P-type group III-V nitride semiconductor layer, and the second electrode portion is in contact with the N-type group III-V nitride semiconductor layer.

Semiconductor device employing group III-V nitride semiconductors and method for manufacturing the same

A method for forming a nitride semiconductor laminated structure includes forming a first layer that is an n-type or i-type first layer composed of a group III nitride semiconductor using an Hcarrier gas; forming a second layer by laminating a p-type second layer composed of a group III nitride semiconductor and containing Mg on the first layer using an Hcarrier gas; and forming a third layer that is an n-type or i-type third layer composed of a group III nitride semiconductor on the second layer using an Hcarrier gas after forming the second layer. A method for manufacturing a nitride semiconductor device includes the method steps for forming the nitride semiconductor laminated structure.

Method for forming a nitride semiconductor laminated structure and method for manufacturing a nitride semiconductor element

A light-emitting device includes a group III nitride semiconductor layer of a multilayer structure consisting of a group III nitride semiconductor having a major surface defined by a nonpolar plane or a semipolar plane and having at least an n-type layer and a p-type layer. A surface of the group III nitride semiconductor layer on a light extraction side is a mirror surface. The light-emitting device may further include a transparent electrode in contact with the surface of the group III nitride semiconductor layer on the light extraction side. In this case, a surface of the transparent electrode on the light extraction side is preferably a mirror surface.

Light-emitting device

The MIS field-effect transistor includes: a substrate; a nitride semiconductor multilayer structure portion formed on the substrate, including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type stacked thereon and a third group III-V nitride semiconductor layer of the first conductivity type stacked thereon; a gate insulating film formed on a wall surface formed over the first, second and third group III-V nitride semiconductor layers to extend over these first, second and third group III-V nitride semiconductor layers; a gate electrode made of a conductive material formed as being opposed to the second group III-V nitride semiconductor layer via the gate insulating film; a drawn portion electrically connected to the first group III-V nitride semiconductor layer and drawn from the nitride semiconductor multilayer structure portion in a direction parallel to the substrate; a drain electrode formed in contact with the drawn portion; and a source electrode electrically connected to the third group III-V nitride semiconductor layer.

MIS field effect transistor and method for manufacturing the same

An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer.

Semiconductor laser diode

A nitride semiconductor device according to the present invention includes: a nitride semiconductor laminated structure comprising a first layer made of a Group III nitride semiconductor, a second layer laminated on the first layer and made of an Al-containing Group III nitride semiconductor with a composition that differs from that of the first layer, the nitride semiconductor laminated structure comprising a stripe-like trench exposing a lamination boundary between the first layer and the second layer; a gate electrode formed to oppose the lamination boundary; and a source electrode and a drain electrode, having the gate electrode interposed therebetween, each connected electrically to the second layer.

Nitride semiconductor device

A back-surface-electrode type semiconductor laser of GaN-based compound has low electric resistance and high light emitting efficiency, and includes negative electrodes made of Al having a contact surface that contacts with the n-type GaN substrate. The back-surface-electrode type semiconductor laser has GaN-based compound layers laminated on an n-type GaN substrate with an area of reversal of polarity with low electric resistance and a negative electrode is disposed on the side opposite to the side of GaN-based compound layer of the GaN substrate so as to come in contact with the area of reversal of polarity.

Semiconductor laser and method for manufacturing semiconductor laser

The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.

Growing community of inventors

Kyoto, Japan

Hiroaki Ohta