Sony Corporation

Hiroaki Ohki

Mitsuru Sato

Hideshi Abe

Yoshiaki Kitano

Nobuhiro Karasawa

Jun Kuroiwa

Ritsuo Takizawa

Kiyoshi Hirata

Mitsuru Yamashita

Katsunori Kokubun

Hiroyuki Mori

Junya Suzuki

Osamu Nishima

A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Solid-state imaging device

Solid-state imaging device and method for manufacturing thereof as well as driving method of solid-state imaging device

A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Solid-state imaging device and driving method of solid-state imaging device

Solid-state imaging device with biased light shielding film

A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

Solid-state image pickup device and manufacturing method for the same

A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that an electrodefor reading a signal charge is provided on one side of a light-receiving sensor portionconstituting a pixel; a predetermined voltage signal V is applied to a light-shielding filmformed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor areais formed in the center on the surface of a first-conductivity-type semiconductor areaconstituting a photo-electric conversion area of the light-receiving sensor portion; and areas(A,B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor areais formed on the surface of the first-conductivity-type semiconductor areaat the end on the side of the electrodeand at the opposite end on the side of a pixel-separation area

Method of driving solid state image sensing device

An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage and a method of forming same. A first diffusion region is formed by diffusing into the semiconductor body a low concentration of an impurity having a conduction type opposite to that of said semiconductor body and having a high diffusion coefficient. A second diffusion region is formed by diffusing into an upper surface portion of the first diffusion region, and in self-alignment therewith, a high concentration of an impurity having a low diffusion coefficient. A third diffusion region is formed by diffusing into the first and second diffusion regions, and in self-alignment therewith, a high concentration of an impurity having a high diffusion coefficient, such that the third diffusion region extends from a surface of said semiconductor body through said first and second diffusion regions to beneath the first diffusion region. A wiring line is formed on the semiconductor body such that the first, second and third diffusion regions lie beneath the wiring line. The high and low diffusion coefficients are high and low relative to one another, and the high and low concentrations are high and low relative to one another.

Process for forming an output circuit device for a charge transfer

A first diffusion layer in which phosphor of a low concentration is diffused is formed in a semiconductor body, and a second diffusion layer in which arsenic or antimony of a high concentration is formed in a portion of the upper face of the first diffusion layer. Further, a third diffusion layer in which phosphor of a high concentration is formed in the range of the second diffusion layer on the surface of the semiconductor body in a deeper condition than the first diffusion layer is formed.

Output circuit device for a charge transfer element having tripartite

An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage his constructed such that a gate oxide film of a driving side MOS transistor of a first stage source follower which receives signal charge is formed as a thinner film than gate oxide films of the other MOS transistors in the same circuit to reduce the 1/f noise.

Growing community of inventors

Kanagawa, Japan

Hiroaki Ohki