Canon Kabushiki Kaisha

Hiroaki Naruse

Ryuichi Mishima

Masatsugu Itahashi

Shigeru Nishimura

Hiroshi Yuzurihara

Aiko Kato

Takashi Okagawa

Hidekazu Takahashi

Tetsuya Itano

Takanori Watanabe

Mineo Shimotsusa

Takehito Okabe

Shingo Kitamura

Takehiro Toyoda

Shunsuke Takimoto

Kotaro Abukawa

Nobuhiko Sato

Yusuke Onuki

Yojiro Matsuda

Masaki Kurihara

Takeshi Aoki

Katsunori Hirota

Kouhei Hashimoto

Daisuke Shimoyama

Masashi Kusukawa

Yuya Fujino

Kazuo Yamazaki

Hiroaki Kobayashi

Takeshi Akiyama

Akihiro Shimizu

Junji Iwata

Yasushi Matsuno

Nobuyuki Endo

Sho Suzuki

Tadashi Sawayama

Tomoyuki Tamura

Akihiro Kawano

Keita Torii

Kenji Togo

Takashi Usui

Kazuo Kokumai

Toru Eto

Yu Nishimura

Atsushi Ogino

Daisuke Uki

A device comprising a first layer, a sealing layer and a resin layer stacked in that order and an organic layer arranged between the first layer and the sealing layer in a pixel region is provided. The first, sealing and resin layers have openings for exposing an electrode in a peripheral region. The sealing layer includes second and third layers each having a water permeability lower than the first layer, and a fourth layer arranged between the second layer and the third layer and having a defect density lower than the second layer. A step of the second layer arranged above the end of the opening of the first layer is covered with the fourth layer and a step of the third layer arranged above the end of the opening of the first layer is covered with the resin layer.

Organic device and method of manufacturing the same

A semiconductor device used for a liquid discharge head is provided. The device includes a wiring layer, an insulating member formed above the wiring layer, a heat generation element arranged above and in contact with the insulating member, and electrically connected to the wiring layer, a metal member arranged above and in contact with the insulating member, and electrically connected to the wiring layer, and an electrically conductive member covering an upper surface of the metal member and electrically connected to the wiring layer through the metal member. A resistivity of the electrically conductive member is less than a resistivity of the metal member and a resistivity of the heat generation element. The heat generation element and the metal member are separated from each other.

Semiconductor device, method of manufacturing same, liquid discharge head, and liquid discharge apparatus

An imaging device includes a pixel circuit region that includes a plurality of pixel circuits arranged in an array therein and a plurality of light guide portions. The imaging device also includes a peripheral circuit region that is positioned at a periphery of the pixel circuit region and includes a peripheral circuit. The imaging device also includes an intermediate region that is positioned between the pixel circuit region and the peripheral circuit region, forms a boundary with the pixel circuit region and the peripheral circuit region, and includes a plurality of dummy light guide portions and a plurality of contacts through which a reference potential of the plurality of pixel circuits is supplied.

Imaging device and method of producing the same

A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Photoelectric conversion device, method for producing photoelectric conversion device, and image pickup system

A semiconductor device manufacturing method includes a step of forming a hole reaching a first insulating layer over a first conductive member; a step of forming a trench reaching a second insulating layer and in communication with the hole; a step of forming an opening exposing the first conductive member in the hole; and a step of forming a second conductive member connected to the first conductive member by embedding a conductive material in the opening, the hole, and the trench. The trench is formed under an etching condition such that the etching rate with respect to the second insulating layer is lower than the etching rate with respect to the third insulating layer.

Semiconductor device manufacturing method, and photoelectric conversion device

One portion of a first insulator film, which is positioned on a second semiconductor region, and another portion of the first insulator film, which is positioned on a third semiconductor region, are removed, while a first portion of the first insulator film, which is positioned on a first semiconductor region is remained, one portion of a second insulator film, which is positioned on the first semiconductor region, and another portion of the second insulator film, which is positioned on the second semiconductor region, are removed, while a second portion of the second insulator film, which is positioned on the third semiconductor region is remained, and a metal film that covers the first portion, the second semiconductor region, and the second portion, and the second semiconductor region are caused to react with each other and a metal compound layer is formed.

Method of manufacturing imaging device

A substrate includes a first region having photoelectric conversion portions and a second region having an element included in a signal processing circuit. An insulator including first and second parts respectively arranged on the first and second regions is formed on the substrate. Openings are formed in the insulator and respectively superposed on the photoelectric conversion portions. A first member is formed in the openings and on the second part of the insulator after forming the openings. At least a portion of the first member arranged on the second region is removed. The first member is planarized after removing at least the portion of the first member. A second insulator is formed on the first and second regions after planarizing the first member. A through-hole is formed in a part of the second insulator. No planarization with grinding is performed after forming the second insulator and before forming the through-hole.

Manufacturing method of semiconductor device

A method of manufacturing a photoelectric conversion apparatus which includes a pixel circuit section having a well where a photoelectric conversion element and an amplification element configured to generate a signal based on an amount of charge generated in the photoelectric conversion element are arranged, and a peripheral circuit section having a MOS transistor. The method includes forming a dielectric film for covering the photoelectric conversion element, the amplification element, and a gate electrode of the MOS transistor and forming, by etching the dielectric film, a side spacer by remaining a portion of the dielectric film on a side surface of the gate electrode while protecting by a resist, wherein an opening is formed in the dielectric film of the pixel circuit section with the etching, and a contact for defining a potential of the well is formed through the opening.

Method of manufacturing photoelectric conversion apparatus including pixel well contact

An image capturing device includes an intermediate region located between a pixel circuit region and a peripheral circuit region and forming a boundary with the pixel circuit region and the peripheral circuit region. The pixel circuit region, the peripheral circuit region, and the intermediate region are provided with a semiconductor layer, a first wiring layer on the semiconductor layer, and a second wiring layer located away from the semiconductor layer relative to the first wiring layer. Pixel circuits and a peripheral circuit are connected via one of at least the first wiring layer and the second wiring layer in the intermediate region. The area occupancy of the one wiring layer in the intermediate region relative to a total area thereof is between 0.5 times and 1.5 times the area occupancy of the one wiring layer in the pixel circuit region relative to a total area thereof.

Image capturing device

Each of a plurality of pixel circuits is an insulated gate transistor and includes a first kind transistor having a maximum value of a gate potential difference to be applied equal to or higher than a first value. Each of a plurality of analog signal processing circuits is an insulated gate transistor and includes a second kind transistor having a maximum value of a gate potential difference to be applied equal to or lower than a second value that is lower than the first value. Each of a plurality of analog signal processing circuits does not include an insulated gate transistor having a maximum value of a gate potential difference to be applied not higher than the second value.

Imaging apparatus and imaging system

An exemplary embodiment according to the present invention is an imaging device including a substrate in which a plurality of light receiving portions is arranged, an insulator configured to be arranged on the substrate, a plurality of first members configured to be arranged on the substrate so that each of projections of the plurality of first members on the substrate overlaps at least in part with any of the plurality of light receiving portions, and each of the plurality of first members sides is surrounded by the insulator, a second member configured to be arranged on the insulator and the plurality of first members, and a light shielding portion configured to be arranged in the second member.

Imaging device, imaging system, and method for manufacturing imaging device

A photoelectric conversion apparatus includes a semiconductor substrate on which a photoelectric conversion element and a transistor are arranged and a plurality of wiring layers including a first wiring layer and a second wiring layer above the first wiring layer, in which a connection between the semiconductor substrate and any of the plurality of wiring layers, between a gate electrode of the transistor and any of the plurality of wiring layers, or between the first wiring layer and the second wiring layer, has a stacked contact structure.

Photoelectric conversion apparatus, image pickup system, and manufacturing method therefor

A method for manufacturing a semiconductor device, the method comprising, forming an opening in an insulating layer, which is formed on a semiconductor substrate, using a photoresist pattern formed on the insulating layer as a mask, forming a first element isolation portion in the semiconductor substrate by implanting an ion into the semiconductor substrate using the photoresist pattern as a mask, forming a second element isolation portion, in the semiconductor substrate, whose outer edge is outside an outer edge of the opening, by implanting an ion into the semiconductor substrate through the opening, and forming a third element isolation portion, which is inside the outer edge of the second element isolation portion, by embedding an insulating member in the opening and removing the insulating layer.

Method for manufacturing semiconductor device having element isolation portions

Growing community of inventors

Yokohama, Japan

Hiroaki Naruse