Sony Corporation

Sony Semiconductor Solutions Corporation

Hiroaki Narisawa

Katsuhisa Aratani

Akio Takada

Takeyuki Sone

Takuji Shibata

Moriaki Abe

Shinya Kubo

Tadayuki Honda

Keitaro Endo

Tetsuya Yamamoto

Masanori Hosomi

Yutaka Higo

Kazuhiro Bessho

Kazuhiko Hayashi

Hiroshi Kano

Kazuhiro Ohba

Takashi Watanabe

Tomohito Tsushima

Tetsuya Mizuguchi

Jin Sato

Minoru Ikarashi

Norio Saito

Wataru Otsuka

Yoshito Ikeda

Hidenari Hachino

Kenji Yazawa

Seiji Nonoguchi

Wataru Ishikawa

Noboru Wakabayashi

Provided is a storage apparatus provided with a plurality of storage elements having storage layers comprising a plurality of layers and electrodes, one layer among the plurality of layers being extended in a first direction and being shared by the plurality of storage elements disposed in the first direction, the electrodes being extended in a second direction that differs from the first direction and being shared by the plurality of storage elements disposed in the second direction.

Memory device and method of manufacturing memory device

It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density. A storage element includes resistance changing elementshaving recording layersprovided between two electrodesand in which resistance values of the recording layersare reversibly changed with application of electric potential with different polarities to these two electrodes, at least part of the layersconstructing the recording layers of the resistance changing elementsbeing formed commonly by the same layer in a plurality of adjacent memory cells.

Storage device with reversible resistance change elements

In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.

Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof

A manufacturing method of a magnetic memory device, wherein the inventive method does not require any special technique for forming pattern, but bilaterally ensures precision for processing a tunnel magneto-resistive effect element (called TMR element) and self-matching formation of connecting elements. The manufacturing method of a magnetic memory device comprises a processing step of forming a tunnel magneto-resistive effect film sandwiching a tunnel barrier layer between a magnetic pinned layer and a memory layer into a predetermined elementary configuration by applying a mask layer, wherein the mask layer is formed by applying a plating process.

Manufacturing method of magnetic memory device

A magneto-resistive effect type magnetic head employing a spin valve film in which the direction of magnetization of a free layer is constant even in the absence of an external magnetic field to assure magnetic stability. The magneto-resistive effect type magnetic head includes a magneto-resistive effect film of a planar substantially rectangular configuration, having its longitudinal direction substantially perpendicular to a magnetic recording medium sliding surface, a first electrode connected to a longitudinal end of the magneto-resistive effect film, a second electrode connected to the other longitudinal end of the magneto-resistive effect film and hard magnetic films arranged on both ends along the width of the magneto-resistive effect film. The magneto-resistive effect film is made up of at least a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer and an anti-ferromagnetic layer, layered together. The hard magnetic films has an electrical resistance larger than that of the magneto-resistive effect film.

Magneto-resistive effect magnetic head

The present invention provides a high quality magnetoresistance effect type magnetic head having an increased reproduction output and capable of applying a uniform bias magnetic field to a magnetoresistance effect layer without increasing an impedance. The magnetoresistance effect type magnetic head according to the present invention includes: a magnetic layer 11 magnetized approximately in a vertical direction to a plane 14 opposing to a magnetic recording medium; a non-magnetic insulation layer 12 formed on the magnetic layer 11; and a magnetoresistance effect layer 13 formed on the non-magnetic insulation layer 12 and exhibiting the magnetoresistance effect. In the longitudinal type magnetoresistance effect type magnetic head according to the present, the detection current supplied to a magnetoresistance element is prevented from flowing into a hard magnetic film to lower the head reproduction output.

Magnetoresistance effect type magnetic head

A thin film magnetic head has a lower magnetic layer and an upper magnetic layer formed over the lower magnetic layer so that a small gap is formed between a magnetic gap section of the lower magnetic layer near a sliding surface to be brought into sliding contact with a magnetic recording medium and a magnetic gap section of the upper magnetic layer extending in parallel to the magnetic gap section of the lower magnetic layer near the sliding surface. The upper magnetic layer has a first sloping section extending from the magnetic gap section at an inclination .theta..sub.1 in a range defined by 2.degree..ltoreq..theta..sub.1 .ltoreq.25.degree. to the upper surface of the lower magnetic layer, and a second sloping section extending from the first sloping section at an inclination .theta..sub.2 in a range defined by: 30.degree..ltoreq..theta..sub.2 .ltoreq.80.degree. to the upper surface of the lower magnetic layer. Magnetic flux leaks across the lower magnetic layer and the first inclined section of the upper magnetic layer, so that the magnetic saturation of the magnetic gap section of the upper magnetic layer is prevented. Since the second sloping section is inclined at a large inclination, the overwrite characteristics is not deteriorated.

Thin film magnetic head with shaped magnetic layer

A thin film magnetic head which includes a substrate of magnetic or nonmagnetic material, an upper magnetic film on the substrate, a coil conductor on the substrate, and a lower magnetic film on the substrate, the lower magnetic film having a groove formed therein for receiving the coil conductor therein. In the preferred form of the present invention, the thickness of the lower magnetic film is at least 0.3 times the thickness of the upper magnetic film when the substrate is composed of a magnetic material and at least 0.8 times the thickness of the upper magnetic film when the substrate is composed of a nonmagnetic material.

Thin film magnetic head

Growing community of inventors

Tokyo, Japan

Hiroaki Narisawa