Idemitsu Kosan Company, Limited

Kyusyu University Corporation

Hiroaki Nakamura

Masatoshi Saito

Yuki Nakano

Chishio Hosokawa

Hisayuki Kawamura

Tadashi Kusumoto

Hirofumi Kondo

Hidetsugu Ikeda

Masahide Matsuura

Toshihiro Iwakuma

Hisahiro Higashi

Toshio Sakai

Tetsuo Tsutsui

Hideaki Nagashima

Masatoshi Saitou

Naoki Kurihara

Takeshi Yasuda

Masahiro Kawamura

Kenichi Fukuoka

Hiroshi Yamamoto

Takashi Arakane

Hiroshi Tokailin

Kota Terai

Yoshio Hironaka

Toru Bando

Takashi Sekiya

Yoichi Ikeda

Misa Sunagawa

An organic thin film transistor including at least a gate electrode, a source electrode, a drain electrode, an insulator layer and an organic semiconductor layer, at least one of the source electrode and the drain electrode including a conductive polyaniline composition containing (a) a substituted or unsubstituted polyaniline composite which is protonated by an organic protonic acid or its salts represented by M(XCR(CRCOOR)COOR)p and (b) compound having a phenolic hydroxyl group.

Organic thin-film transistor

A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein at least one of Rto Ris a substituent, and the remaining Rto Rare a hydrogen atom.

Compound for organic thin film transistor and organic thin film transistor using the same

A compound for an organic thin film transistor represented by the following formula (1): 

Polycyclic ring-fused compound and organic thin film transistor utilizing the same

A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein Rand R, and Rand Rare respectively combined with each other to form an aromatic hydrocarbon ring having 6 to 60 carbon atoms or an aromatic heterocyclic ring having 3 to 60 carbon atoms; the ring being fused to the ring to which the groups are bonded, whereby the structure of the formula (1) has 5 or more aromatic rings that are fused; and the fused rings formed by Rand R, and Rand Reach may have a substituent.

Fused ring compounds useful in organic thin-film transistors

A compound for an organic thin film transistor represented by the following formula (1): wherein at least one pair of adjacent two groups of R, R, Rand Ris bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded; and at least one pair of adjacent two groups of R, R, Rand Ris bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded.

A compound represented by the following formula (I), provided that the compound in which all of Rto Rare hydrogen atoms is excluded. 

Heterocycle-containing asymmetric aromatic compound, compound for organic thin film transistor, and organic thin film transistor using the same

A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin film layer.

A compound for an organic thin film transistor having a structure shown by the following formula (1):X-L-Ar-L-X&#x2003;&#x2003;(1)wherein L is &#x2014;C&#x2261;C&#x2014;, or &#x2014;CH&#x2550;CH&#x2014; in a trans configuration, Xand Xare independently a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and their bonding positions to L are in heterocycles, Ar is a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 ring carbon atoms, or a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and at least one of X, Xand Ar is a bi- or higher-fused ring.

Compound for organic thin-film transistor and organic thin-film transistor using the compound

A compound for an organic thin film transistor having a structure of the following formula (1): wherein Rto Rare independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 30 carbon atoms, a haloalkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a haloalkoxy group having 1 to 30 carbon atoms, an alkylthio group having 1 to 30 carbon atoms, a haloalkylthio group having 1 to 30 carbon atoms, an alkylamino group having 1 to 30 carbon atoms, a dialkylamino group having 2 to 60 carbon atoms (the alkyl groups may be combined with each other to form a ring structure containing the nitrogen atom), an alkylsulfonyl group having 1 to 30 carbon atoms, a haloalkylsulfonyl group having 1 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 60 carbon atoms, an aromatic heterocyclic group having 3 to 60 carbon atoms, an alkylsilyl group having 3 to 20 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms or a cyano group, which each may have a substituent, provided that the compound in which all of Rto Rare a hydrogen atom is excluded.

An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.

Organic thin film transistor having an amorphous channel control layer with specified inozation potential

A compound for an organic thin film transistor having a structure shown by the following formula (1):X-L-Ar-L-X&#x2003;&#x2003;(1)wherein L is &#x2014;C&#x2261;C&#x2014;, or &#x2014;CH&#x2550;CH&#x2014; in a trans configuration, Xand Xare independently an alkyl group having 2 to 30 carbon atoms or a haloalkyl group having 1 to 30 carbon atoms, and Ar is a substituted or unsubstituted aromatic hydrocarbon group having 14 to 60 ring carbon atoms which is a condensed ring of three or more rings, or a substituted or unsubstituted aromatic heterocyclic group having 11 to 60 ring atoms which is a condensed ring of three or more rings.

A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by CH&#x2014;CH&#x2550;CH&#x2014;CH, or a distyryl structure expressed by CH&#x2014;CH&#x2550;CH&#x2014;CH&#x2014;CH&#x2550;CH&#x2014;CHeach without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.

Organic thin film transistor

An organic electroluminescent device () including an anode (), a cathode (), and at least a first layer (), a second layer (), and a third layer () provided between the anode () and the cathode () in that order from the anode side. At least one of the first to third layers (), (), and () includes a phosphorescent compound. At least one of the first to third layers (), (), and () is an emitting layer. At least three compounds respectively forming the first layer (), the second layer (), and the third layer () other than the phosphorescent compound are compounds of the following formula (). wherein Rto Reach represent a hydrogen atom or a substituent, provided that adjacent substituents may form a ring.

Organic electroluminescence device

An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

Organic thin film transistor and organic thin film light emitting transistor having organic semiconductor compound with divalent aromatic hydrocarbon group and divalent aromatic heterocyclic group

An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a compound having a specified structure; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed (driving speed) and has a large ON/OFF ratio, are provided.

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Chiba, Japan

Hiroaki Nakamura