Mitsubishi Denki Kabushiki Kaisha

Hiroaki Morimoto

Tadashi Nishioka

Hiroshi Koyama

Yoji Mashiko

Hiroshi Onoda

Yasuo Inoue

Masaru Kobayashi

Yaichiro Watakabe

Tatsuo Okamoto

Kiyoharu Anzai

The present invention relates to a power generation controller of a vehicle power generator, which includes: voltage detection means for sampling a voltage of a battery based on a reference clock signal; duty range setting means for setting a range for an ON/OFF ratio of a field switching element from the rotation speed of the power generator; control duty computation means for computing the ON/OFF ratio of the field switching element based on thus set duty range from a deviation between a power generation target voltage and voltage information as a result of sampling; and field PWM drive means for controlling the ON/OFF switching operation of the field switching element with an interval based on the reference clock signal from the computed ON/OFF ratio.

Power generation controller of vehicle power generator

A method of wiring a semiconductor device which allows a manufacturing step to be simplified without deteriorating an insulation characteristic of an aerial wiring. The semiconductor device wiring apparatus formed thereby includes a first beam column 1a disposed above a substrate 50 and a second beam column 1b disposed horizontally thereto. A wiring portion of the aerial wiring to be formed upwardly is formed by using the first beam column 1a and a wiring portion to be formed horizontally to wiring layer of the substrate 50 is formed by using the second beram column, which results in that no insulating film for the aerial wiring is required to simplify manufacturing steps.

Method of wiring semiconductor device using energy beam

Accurate etching control using focused ion beams can be achieved if the etching is performed in accordance with a detection signal obtained by detecting an electric current passing from a semiconductor device to ground or secondary electrons generated when the charged beams are spirally applied to a predetermined area during the charged-beam scanning operation. Therefore, the end point of the process can be accurately detected and uniform processing results can be obtained. As a result, precise etching control can be performed and a reliable semiconductor device can be manufactured.

Method of controlling etching with a focused charged beam by detecting

Disclosed are an apparatus for wiring a semiconductor device and a wiring method therefor which allow a manufacturing step to be simplified without deteriorating an insulation characteristic of an aerial wiring. The semiconductor device wiring apparatus includes a first beam column 1a disposed above a substrate 50 and a second beam column 1b disposed horizontally thereto. Therefore, a wiring portion of the aerial wiring to be formed upwardly is formed by using the first beam column 1a and a wiring portion to be formed horizontally to wiring layer of the substrate 50 is formed by using the second beam column, which results in that no insulating film for the aerial wiring is required to simplify manufacturing steps.

Apparatus for wiring semiconductor device using energy beam and wiring

In a manufacturing method of a junction gate field effect transistor, impurities of a first conductivity type are first implanted at a predetermined concentration into a monocrystal silicon layer separately formed on a region to be used as an active region in an insulating layer, and then surfaces of the monocrystal silicon layer and an insulating substrate are covered with a silicon oxide film. Then, impurities of a second conductivity type are implanted at a predetermined concentration into a portion to be used as a gate electrode in a monocrystal silicon layer by a focused ion beam method, and metal ions are implanted at a predetermined concentration into a portion to be used as a gate electrode of the silicon oxide film covering the monocrystal silicon layer by the focused ion beam method. Then, a polycrystal silicon gate electrode doped with impurities and having an area larger than the portion to be used as the gate electrode of the silicon oxide film is formed to cover a surface of the portion to be used as the gate electrode. Thereafter, impurities of the second conductivity type are implanted at a predetermined concentration into the monocrystal silicon layer, using this polycrystal silicon gate electrode as a mask, to form a source region and a drain region.

Manufacturing method of a junction gate field effect transistor

A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

Process for forming electrodes for semiconductor devices by focused ion

Process for forming electrodes for semiconductor devices using focused

The method for repairing the pattern is to repair the lacking portion of the pattern included in the X-ray exposure mask with the WF.sub.6 gas being filled in the vicinity thereof, wherein the focused ion beam irradiates the defect portion, whereby the WF.sub.6 gas is decomposed to form a tungsten thin film so as to at least fill the lacking portion. On this occasion, the focused ion beam is successively applied so that it is always in contact with the edge of the tungsten thin film constituting the pattern.

Method for repairing a pattern

A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connectig the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

Process for forming electrodes for semiconductor devices

A photomask material according to the present invention comprises a transparent substrate and a silicide film of a transition metal formed on the transparent substrate.

Photomask material

A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process including the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed in greatly reduced.

In a method for identifying blistered film in layered films, a focused ion beam irradiates the approximate center of the blister and a portion which has no blister, and individual sets of the measurement data relating to the respective numbers of secondary electrons generated by the irradiation are compared to determine which film of layered films has blistered. Since the focused ion beam is employed, the present method is applicable to the detection of a small blister in layered films. Furthermore, since an enormous number of cutting operations as might have been required in the prior art are eliminated, the present method can be carried out, stably, positively and economically.

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Itami, Japan

Hiroaki Morimoto