Nichia Corporation

Hiroaki Matsumura

Yohei Wakai

Kenji Oka

Keiji Sakamoto

Masanao Ochiai

Tomoya Yanamono

Tokuya Kozaki

Mitsuhiro Nonaka

Yasuhisa Kotani

Ken Katsuragi

Tsuyoshi Hirao

Takuya Yamanoi

Takashi Abe

Nobuhiro Ubahara

Akira Kitano

Hitoshi Umemoto

Kyosuke Nakagawa

A light-emitting device includes a substrate including a substrate second upper surface provided between a substrate bottom surface and a substrate first upper surface in a height direction. A light-emitting element to emit ultraviolet light is provided on the substrate first upper surface. A protective element includes a protective element upper surface provided between the substrate first upper surface and the substrate second upper surface in the height direction. A frame is bonded to the substrate first upper surface via adhesive members to surround the light-emitting element. The frame includes a frame lower surface opposite to the substrate first upper surface and the substrate second upper surface in the height direction to provide a gap between the substrate first upper surface and the frame lower surface. A space in which the light-emitting element is provided communicates with an outside of the light-emitting device via the gap.

Light-emitting device

To provide a semiconductor light emitting element of which color irregularity is improved, the semiconductor light emitting element according to the present invention comprises: a support substrate; a semiconductor laminated structural body provided on the support substrate, the semiconductor laminated structural body having a first semiconductor layer, a luminescent layer, and a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a light shielding member covering a portion of an upper surface and side surfaces of the semiconductor laminated structural body, the light shielding member electrically separated from both of the first electrode and the second electrode; and a wavelength conversion member covering an upper surface not covered by the light shielding member of the semiconductor laminated structural body.

Semiconductor light emitting element including protective film and light shielding member

To provide a semiconductor light emitting element with high luminous efficiency, the light emitting element includes: a substrate; a semiconductor laminate placed above the substrate, the semiconductor laminate comprising a second semiconductor layer, an active layer and a first semiconductor layer laminated in this order from the substrate; and a first electrode and a second electrode placed between the substrate and the semiconductor laminate, wherein the semiconductor laminate is divided in a plurality of semiconductor blocks by a groove, wherein the first electrode includes protrusions that are provided in each of the plurality of semiconductor blocks and that penetrate the second semiconductor layer and the active layer to be connected to the first semiconductor layer, and wherein the second electrode is connected to the second semiconductor layer in each of the plurality of semiconductor blocks and has an external connector that is exposed on the bottom of the groove.

Light emitting element

The light emitting element including: a semiconductor laminate including a first layer, an active layer and a second layer; a first electrode including protrusions that penetrate the second layer and the active layer, the first electrode connected to the first layer via the protrusions; a second electrode connected to the second layer on an lower face of the second layer; and an insulation film between the protrusions and the semiconductor laminate, wherein the protrusions each include a protrusion body covered with the insulation film and a protrusion tip, an upper face and a side face of the protrusion tip being exposed from the insulation film, the first layer includes recesses arranged on an upper face of the first layer so as to sandwich first areas located above the respective the protrusions, and a distance between the recesses sandwiching the first area is larger than a width of the protrusion tip.

Semiconductor light emitting element

A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

Method for manufacturing semiconductor light emitting device

A method of manufacturing a semiconductor light emitting element includes preparing a semiconductor stacked layer structure by stacking a first semiconductor layer and a second semiconductor layer in this order, forming a second electrode and an insulating layer in this order on the second semiconductor layer, exposing the first semiconductor layer by removing a part of the second semiconductor layer, forming a first electrode by forming a metal layer on the exposed first semiconductor layer and the insulating layer and flattening a surface of the metal layer, forming a first electrode-side bonding layer having a top layer made of Au on the first electrode, preparing a support substrate including a support substrate-side bonding layer having a top surface made of Au, and bonding the first electrode-side bonding layer and the support substrate-side bonding layer.

Semiconductor light emitting element and method for manufacturing the same

A method for fabricating a semiconductor light emitting device is provided. The method includes forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The method also includes forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; and forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area.

Method for fabricating semiconductor light emitting device

A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting deviceis provided with an n-electrode, which is arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stackis mounted on a substrate. A plurality of convexes are arranged on a first convex regionand a second convex regionon the light extraction surface. The second convex regionadjoins to the interface between the n-electrodeand the semiconductor stack, between the first convex regionand the n-electrode. The base end of the first convex arranged in the first convex regionis positioned closer to alight emitting layerthan the interface between the n-electrodeand the semiconductor stack, and the base end of the second convex arranged in the second convex regionis positioned closer to the interface between the n-electrodeand the semiconductor stackthan the base end of the first convex.

Semiconductor light emitting device and method for manufacturing the same

A semiconductor light emitting device, which includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; a semiconductor light emitting portion having a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer, wherein the second conductivity-type semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion by a separation area.

Semiconductor light emitting device and method for fabricating the same

The light emitting element includes a first electrode and a second electrode opposite each other and electrically connected respectively to a first conductive-type layer and a second conductive type layer constituting a semiconductor structure. The first electrode has a pair of electrode extending portions disposed opposite each other on an electrode forming surface over the first conductive-type layer which is positioned at the light extracting side. In the opposing direction of the pair of electrode extending portions, a half distance Ibetween the electrode extending portions is smaller than the distance Lfrom the electrode extending portions to an end edge of the electrode forming surface.

Light emitting element and light emitting device using the light emitting element

A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a substrate having an electrode formed on at least one main surface. The substrate is a nitride semiconductor substrate whose surface includes two regions. The first region has an electrode formed thereon and a second region does not have any electrodes formed thereon. A first n-type impurity is included in a higher concentration in the first region than that in the second region in the vicinity of the surface of the substrate.

Nitride semiconductor device including different concentrations of impurities

A nitride semiconductor laser element exhibits high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer each laminated on the main surface of the substrate. The nitride semiconductor laser element further includes a striped ridge portion formed in the p-type semiconductor layer, and pn-junctions of the semiconductor layer in the peripheral region remote from the ridge portion are broken by ion implantation to form an insulative region for reducing the capacitance of the element.

Growing community of inventors

Tokushima, Japan

Hiroaki Matsumura