Renesas Electronics Corporation

Renesas Technology Corp.

Saturn Licensing LLC

Sony Corporation

Ttpcom Limited

Sony Group Corporation

Japan Science and Technology Agency

Hitachi Device Engineering Co., Ltd.

Morinaga Milk Industry Co., Ltd.

Ricoh Company, Ltd.

Hiroaki Matsui

Takayuki Sasaki

Takashi Ikuta

Taizo Yamawaki

Kazuaki Hori

Tomoya Yano

Masahiko Yamamoto

Yasuyuki Kimura

Satoru Tomisawa

Kazuhisa Okada

Yasuo Shima

Ryoji Furuya

Satoshi Tanaka

Masahiro Ito

Shinichi Takagi

Ken Kikuchi

Mitsunobu Morita

Kunio Hayakawa

Yoshiaki Harasawa

Koichi Yahagi

Sungwoo Cha

Tetsuya Wakuda

Masumi Kasahara

Robert Astle Henshaw

Tatsuya Sakata

Kenichi Shibata

Kotaro Shima

Yasuyuki Okuma

Teruhiko Mizota

Hitoshi Tabata

Kazuyoshi Sotoyama

Takehito Yamaguchi

Mitsuru Takenaka

Toshiaki Ikeda

Steve Williams

Masamichi Tanabe

Hiroaki Suzuki

Yuzo Asano

Tomohisa Kakuda

Yoshiaki Matsunaga

Keiji Iwatsuki

Yukio Ohmura

Tohru Kitano

Tetsushi Mori

Kazumasa Okamoto

Yoshitaka Sano

Yuhei Fujimoto

Masachika Oono

Yasutatsu Mizota

Kimihiko Kato

Kyoya Takegawa

A semiconductor device includes: a first terminal connected to an antenna; a second terminal connected to an input terminal of a receiving circuitry; a third terminal connected to an output terminal of a transmitting circuitry; a first inductor arranged in a signal path extending from the first terminal to the second terminal; and a second inductor arranged in a signal path extending from the first terminal to the third terminal, and the first inductor and the second inductor are formed so as to have at least a partial overlapping portion in plan view.

Semiconductor device and impedance-matching circuitry

An illumination unit according to the present disclosure includes a plurality of first light-emission blocks, a plurality of second light-emission blocks, and a light-emission controller. The first light-emission blocks each include a plurality of first light-emitting devices arranged in a first direction. The second light-emission blocks are partially overlapped with the respective first light-emission blocks, and each include a plurality of second light-emitting devices arranged in a second direction different from the first direction. The light-emission controller performs light-emission control of the first light-emitting devices for each of the first light-emission blocks, and performs the light-emission control of the second light-emitting devices for each of the second light-emission blocks.

Illumination unit and display apparatus

The present technology relates to a display device and a speaker device capable of outputting sound from the display surface of a non-self-luminous display panel. Provided is a display device including: a display panel unit that includes a non-self-luminous display cell; a light source unit that irradiates the display panel unit with light from a back surface; and an excitation unit that vibrates a constituent member constituting the display panel unit and outputs sound from a display surface of the display cell. The excitation unit provides excitation to an excitation member having a predetermined shape and a predetermined color to vibrate the constituent member that is fixed to the excitation member by a predetermined fixing method. The present technology can be applied to, for example, a liquid crystal display device.

Display device and speaker device

Illumination and display apparatus

A tunneling field effect transistor according to an embodiment of the present invention includes: a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type and realizing a heterojunction with respect to the first semiconductor layer in a first region; a gate insulating layer over the second semiconductor layer in the first region; a gate electrode layer over the gate insulating layer; a first electrode layer electrically connected to the first semiconductor layer; a second electrode layer electrically connected to the second semiconductor layer; and a first insulating layer interposed between the first semiconductor layer and the second semiconductor layer in a second region adjacent to the first region toward the second electrode layer.

Tunneling field effect transistor

There is a need to reduce secondary intermodulation distortion that may occur in a reception circuit of a high-frequency signal processor and a wireless communication system having the same. In test mode, for example, a test signal generating circuit TSGEN generates a test signal RFtst at f_tx&#xb1;0.5 MHz. The test signal RFtst is input to a mixer circuit MIXrx_I (MIXrx_Q). A correction circuit block CALBK detects an IM2 component resulting from the MIXrx_I (MIXrx_Q). The CALBK varies a differential balance for the MIXrx_I (MIXrx_Q) and concurrently monitors a phase for the IM2 component resulting from MIXrx_I (MIXrx_Q). The CALBK searches for the differential balance corresponding to a transition point that allows the phase to transition by approximately 180&#xb0;. The MIXrx_I (MIXrx_Q) operates in normal mode using the differential balance as a search result.

High-frequency signal processor and wireless communication system

There is a need to reduce secondary intermodulation distortion that may occur in a reception circuit of a high-frequency signal processor and a wireless communication system having the same. In test mode, for example, a test signal generating circuit TSGEN generates a test signal RFtst at f_tx &#xb1;0.5 MHz. The test signal RFtst is input to a mixer circuit MIXrx_I (MIXrx_Q). A correction circuit block CALBK detects an IM2 component resulting from the MIXrx_I (MIXrx_Q). The CALBK varies a differential balance for the MIXrx_I (MIXrx_Q) and concurrently monitors a phase for the IM2 component resulting from MIXrx_I (MIXrx_Q). The CALBK searches for the differential balance corresponding to a transition point that allows the phase to transition by approximately 180&#xb0;. The MIXrx_I (MIXrx_Q) operates in normal mode using the differential balance as a search result.

A display device includes: a display of which a display surface is displayed with an image; plural light sources which output light toward the display, and configure a backlight; a diffuser plate arranged between the display and the plural light sources, and diffuses light output from the light source; and a support pin arranged on the opposite side to the display by interposing the diffuser plate therebetween, and holds the diffuser plate by being in contact with the diffuser plate. A plate shaped unit formed in a transparent plate shape is provided at a portion located on the diffuser plate side in the support pin, the plural light sources and the support pin are arranged in line in a direction orthogonal to a direction in which the display and the diffuser plate are aligned, and the plate shaped unit is caused to face the light source in the shortest distance.

Display device

An internal operation of RF IC is adjusted so that the level of an RF transmitter signal is substantially stopped from rising, or made to descend in course of ramp-up of the RF transmitter signal. This adjustment is enabled by ramp-up adjustment data Last 4 symbols contained in preamble data precedent to real transmission data transmitted after completion of ramp-up. The ramp-up adjustment data and real transmission data are supplied from a baseband LSI. The RF transmitter signal contains phase and amplitude modulation components according to the EDGE system. RF IC includes phase and amplitude modulation control loops PM LP and AM LP. Ramp-up of RF power amplifiers PAand PAis performed by controlling the gain of the first variable amplifier MVGA included in the AM LP according to ramp information. Thus, unwanted radiation's level is reduced during ramp-up of the RF transmitter signal of the RF power amplifiers.

Transmitter, RF transmitter signal processor and method for operation of transmitter

The present invention provides a semiconductor integrated circuit for communication (RF IC) realizing high yield without deteriorating a carrier leak characteristic even when a modulation circuit is formed by using cheep parts with large variations. In a semiconductor integrated circuit (RF IC) including: an input circuit constructed by a differential amplifier circuit and a level shifter, which is provided on the ante stage of a mixer of a differential circuit called a Gilbert Cell; and a modulation circuit that performs modulation by adding an I/Q signal and a carrier wave signal, a calibration circuit for canceling a DC offset in an output of the input circuit is provided.

Semiconductor integrated circuit for communication

Growing community of inventors

Tokyo, Japan

Hiroaki Matsui