Rohm Co., Ltd.

Kyoto University

Kaken Pharmaceutical Company, Ltd.

Koken Company, Limited

Kyoto Prefectural Public University Corporation

Medical Research and Development Corporation

Advanced Innovation Development Co. Ltd.

Hiroaki Matsubara

Yasumasa Kasuya

Motoharu Haga

Taro Nishioka

Shigeru Hirata

Tomohira Kikuchi

Yoshizo Osumi

Toshio Nakajima

Yuji Ishimatsu

Hiroshi Kumano

Naoki Kinoshita

Maki Moroi

Hidemasa Oh

Kaori Sumitomo

Tsutomu Sato

Yasuhiko Tabata

Yu Aso

Shigeki Hijikata

Naofumi Takehara

Kento Tateishi

Masanori Fukushima

Satoaki Matoba

A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

Semiconductor device

A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a top surface, a bottom surface, and a first side surface connected to the top surface and the bottom surface. The first side surface includes a first region connected to the top surface, a second region connected to the bottom surface, and a third region connected to the first region and the second region, the plurality of first terminals being exposed to the third region. A surface roughness of each of the top surface, the bottom surface, the first region, and the second region is larger than a surface roughness of the third region.

A semiconductor device includes: a chip; a circuit element formed in the chip; an insulating layer formed over the chip so as to cover the circuit element; a multilayer wiring region formed in the insulating layer and including a plurality of wirings laminated and arranged in a thickness direction of the insulating layer so as to be electrically connected to the circuit element; at least one insulating region which does not include the wirings in an entire region in the thickness direction of the insulating layer and is formed in a region outside the multilayer wiring region in the insulating layer; and at least one terminal electrode disposed over the insulating layer so as to face the chip with the at least one insulating region interposed between the at least one terminal electrode and the chip.

A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a top surface, a bottom surface, and first to third side surfaces. The first terminals include a first edge terminal located closest to the third side surface. The second terminals include a second edge terminal located closest to the third side surface. A first creepage distance, which is a shortest distance from the first edge terminal to the second edge terminal along the first side surface, the third side surface, and the second side surface, is shorter than a second creepage distance, which is a shortest distance from the first edge terminal to the second edge terminal along the first side surface, the bottom surface, and the second side surface.

A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a first side surface located on one side of a first direction, a second side surface located on the other side of the first direction, and third and fourth side surfaces that are separated from each other in a second direction orthogonal to both a thickness direction and the first direction and are connected to the first and second side surfaces. A first gate mark having a surface roughness larger than the other regions of the third side surface is formed on the third side surface. When viewed along the second direction, the first gate mark overlaps a pad gap provided between the first die pad and the second die pad in the first direction.

A semiconductor device includes a conductive support member, a first semiconductor element, and a second semiconductor element. The conductive support member includes a first die pad and a second die pad separated from each other in a first direction. The first die pad and the second die pad overlap each other when viewed along the first direction. The first die pad has a first main surface mounting the first semiconductor element, and a first back surface opposing the first main surface. The second die pad has a second main surface mounting the second semiconductor element, and a second back surface opposing the second main surface. When viewed along a second direction, a distance in the first direction between the first back surface and the second back surface is larger than a distance in the first direction between the first main surface and the second main surface.

A semiconductor device includes a conductive support member, a first semiconductor element, a second semiconductor element, an insulating element, and a sealing resin. The conductive support member includes a first die pad and a second die pad, which are separated from each other in a first direction. The first die pad and the second die pad overlap each other when viewed along the first direction. When viewed along a thickness direction, a peripheral edge of the first die pad has a first near-angle portion including a first end portion in a second direction orthogonal to both the thickness direction and the first direction. The first near-angle portion is separated from the second die pad in the first direction toward the first end portion in the second direction.

Semiconductor device with a transmitting insulating element

There is provided a semiconductor device including: a conductive support including a first die pad and a second die pad having a potential different from a potential of the first die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and a sealing resin that covers the first semiconductor element, the second semiconductor element, and at least a portion of the conductive support.

Plurality of lead frames electrically connected to inductor chip

A power module includes a first die pad, a first switching element, a second die pad, a second switching element, an integrated circuit element, an encapsulation resin, and a lead frame assembly. The encapsulation resin encapsulates the first switching element, the second switching element, and the integrated circuit element. The lead frame assembly includes an outer lead and an inner lead. The lead frame assembly includes a first lead frame and a second lead frame. The first lead frame includes a first inner lead connected to the first die pad and a first outer lead connected to the first inner lead. The second lead frame includes a second inner lead connected to the second die pad and a second outer lead connected to the second inner lead.

Growing community of inventors

Kyoto, Japan

Hiroaki Matsubara