Sumitomo Bakelite Company Limited

Promerus, Lcc

Sumitomo Electric Industries, Limited

Hiroaki Makabe

Takashi Hirano

Toshio Banba

Andrew Bell

Edmund Elce

Yasunori Takahashi

Robert A Shick

Xiaoming Wu

Keitaro Seto

Ramakrishna Ravikiran

Toshiro Takeda

Dino Amoroso

Etsu Takeuchi

Brian Bedwell

Naoshige Takeda

Rajesh Raja Puthenkovilakom

Daoji Gan

Seok Ho Kang

Hiromichi Sugiyama

Shusaku Okamyo

Kagehisa Yamamoto

Embodiments in accordance with the present invention provide for norbornane-type ballast materials, norbornane-type photoactive compounds derived from such ballast materials and alkali-soluble positive-tone polymer compositions that encompass such norbornane-type photoactive compounds and one of a PBO or PNB resin.

Preparation of norbornane-based PAC ballasts

A positive photosensitive resin composition includes (A) a polybenzoxazole precursor resin, (B) a photosensitive diazoquinone compound, (C) a hindered phenol antioxidant shown by the following general formula (1), and (D) a phenol compound shown by the following general formula (2). Formula (1) is: wherein Rrepresents a hydrogen atom or an organic group having 1 to 4 carbon atoms, a is an integer from 1 to 3, and b is an integer from 1 to 3. Formula (2) is: wherein Rrepresents a methylene group or a single bond, c is an integer from 1 to 3, and d is an integer from 1 to 3. A protective film, an interlayer insulating film, and a semiconductor device and a display element using the same are also disclosed.

Positive photosensitive resin composition, cured film, protective film, interlayer insulating film, and semiconductor device and display element using the same

The object of the present invention is to provide a positive photosensitive resin composition which produces no scum and has high sensitivity and high resolution, a cured film, a protecting film, an insulating film, a semiconductor device using the same. The positive photosensitive resin composition of the present invention comprises a specific polyamide resin (A) and a photosensitive agent (B) comprising an ester of a specific phenolic compound with at least one of 1,2-naphthoquinonediazide-4 sulfonic acid and 1,2-naphthoquinonediazide-5-sulfonic acid. The cured film of the present invention comprises a cured product of the positive photosensitive resin composition. The protecting film and insulating film of the present invention comprise the cured film each. The semiconductor device and display device of the present invention have the cured film each.

Positive photosensitive resin composition, cured film, protecting film, insulating film, and semiconductor device and display device using the same

Some embodiments in accordance with the present invention relate to norbornene-type polymers and to photosensitive dielectric resin compositions formed therefrom. Other embodiments relate to films formed from such compositions and to devices, such as electrical, electronic and optoelectronic devices, that encompass such films.

Photosensitive dielectric resin compositions, films formed therefrom and semiconductor and display devices encompassing such films

A positive-type photosensitive resin composition comprises (A) an alkali-soluble resin having at least a polybenzoxazole precursor structure, (B) a sensitizer, and (C) a cyclic compound having an alcoholic hydroxyl group. A protecting layer and an insulating layer include a cured layer which is a cured product of the positive-type photosensitive resin composition. A semiconductor device and a display device include the cured layer. According to the present invention, a highly reliable positive-type photosensitive resin composition can be obtained even when cured at a low temperature.

Positive photosensitive resin composition, cured layer , protecting layer, insulating layer and semiconductor device and display therewith

The present invention provides a positive-working photosensitive resin composition with high sensitivity that gives a pattern having a high resolution and a high film thickness retention rate. In other words, the present invention provides a positive-working photosensitive resin composition comprising 100 parts by weight of a polyamide and 1 to 50 parts by weight of a photosensitive material, that is, a 1,2-naphthoquinone-2-diazide-5-sulfonate ester compound or a 1,2-naphthoquinone-2-diazide-4-sulfonate ester compound of a phenol compound. In addition, the present invention provides a positive-working photosensitive resin composition comprising 100 parts by weight of a polyamide, 1 to 50 parts by weight of a photosensitive material, that is, a 1,2-naphthoquinone-2-diazide-5-sulfonate ester compound or a 1,2-naphthoquinone-2-diazide-4-sulfonate ester compound of a phenol compound and 1 to 30 parts by weight of a phenol compound. Furthermore, the present invention provides a semiconductor device manufactured by using said positive-working photosensitive resin composition.

Positive photosensitive resin compositions and semiconductor device

The present invention provides a positive photosensitive resin composition which can form a pattern of high resolution and high residual film ratio and has high sensitivity. That is, the present invention provides a positive photosensitive resin composition comprising 100 parts by weight of a polyamide resin and 1 to 50 parts by weight of a photosensitizer represented by, for example, the following formula (Q-1):

Positive photosensitive resin composition

Semiconductor device

A positive type photosensitive resin composition which comprises (A) 100 parts by weight of a polyamide represented by the general formula (1):

Semiconductor device using positive photosensitive resin composition and process for preparation thereof

A positive type photosensitive resin composition which comprises (A) 100 parts by weight of a polyamide represented by the general formula (1): ##STR1## wherein X represents a tetravalent aromatic group; Y represents a divalent aromatic group; Z represents a group represented by the formula: ##STR2## in which R.sub.1 and R.sub.2 represent organic groups and R.sub.3 and R.sub.4 represent monovalent organic groups; a and b represent molar fractions; a+b=100 mole %; a=60.0-100.0 mole %; b=0-40.0 mole %; and n represents an integer of 2 to 500, (B) 1 to 100 parts by weight of a photosensitive diazoquinone compound and (C) 1 to 50 parts by weight of a phenol compound represented by a specific structural formula and/or (D) 0.1 to 20 parts by weight of an organosilicon compound represented by a specific structural formula; and a semiconductor device in which a pattern of a polybenzoxazole resin obtained by using the above photosensitive resin composition is formed in a thickness of 0.1 to 20 .mu.m on a semiconductor element.

Growing community of inventors

Tokyo, Japan

Hiroaki Makabe