Kioxia Corporation

Hiroaki Kosako

Ryo Fukuoka

Kouji Matsuo

Shinya Naito

Takayuki Kakegawa

A semiconductor memory device includes a memory cell array and a peripheral circuit. The peripheral circuit includes a plurality of first nodes disposed corresponding to a plurality of first via electrodes, a charging circuit that charges the plurality of first nodes, a discharging circuit that discharges the plurality of first nodes, an address select circuit that electrically conducts one of the plurality of first nodes with the charging circuit or the discharging circuit in response to an input address signal, a plurality of first transistors each disposed in a current path between two of the plurality of first nodes, and a plurality of amplifier circuits that are disposed corresponding to the plurality of first via electrodes and include input terminals connected to any of the plurality of first nodes and output terminals connected to any of the plurality of first via electrodes.

Growing community of inventors

Yokkaichi Mie, Japan

Hiroaki Kosako