Matsushita Electric Works, Ltd.

Hiroaki Kitamura

Yasushi Sawada

Yoshitami Inoue

Kosuke Nakamura

Tsutomu Ichihara

Takuya Komoda

Takashi Hatai

Hiroshi Fukshima

Chousei Hamada

Koshi Akedo

An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of padsfor energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

Infrared radiation element and gas sensor using it

A plasma treatment apparatus includes two or more pairs of electrodes for plasma generation, a treatment chamber for accommodating the electrodes, gas supply unit for supplying a plasma-generation gas such as rare gas into the chamber, and a power supply. A pulse-like or AC voltage is applied between the electrodes to generate dielectric barrier discharge plasma of the gas in the vicinity of atmospheric pressure, so that an object placed between the electrodes is treated by the plasma. At least one of the electrodes is provided with a tubular electrode substrate and a protection layer formed by heat-fusion coating a glass-based material on at least an outer surface exposed to plasma of the tubular electrode substrate.

Electrode for plasma generation, plasma treatment apparatus using the electrode, and plasma treatment with the apparatus

A plasma treatment apparatus capable of efficiently performing a plasma treatment to a large area of an object while preventing the occurrence of streamer discharge is provided. The apparatus includes at least one pair of electrodes, gas supply unit for supplying a gas for plasma generation to a discharge space defined between the electrodes, and an electric power supply for applying an AC voltage between the electrodes to generate plasma of the gas for plasma generation in the discharge space. At least one of the pair of electrodes has a dielectric layer at an outer surface thereof. At least one of the pair of electrodes has a curved surface jutting into the discharge space. It is preferred that the electrodes are of a cylindrical structure. In this case, it is particularly preferred that the plasma treatment apparatus further includes a coolant supply unit for supplying a coolant to the interior of the electrodes to reduce an electrode temperature during the plasma treatment.

Plasma treatment apparatus and plasma treatment method performed by use of the same apparatus

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Moriguchi, Japan

Hiroaki Kitamura