Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Hiroaki Katou

Saya Shimomura

Tatsuya Nishiwaki

Kenya Kobayashi

Toshifumi Nishiguchi

Shotaro Baba

Tetsuya Ohno

Kouta Tomita

Atsuro Inada

Yasuhiro Kawai

Masatoshi Arai

Hiroyuki Kishimoto

Chikako Yoshioka

Hiroshi Yoshida

Tatsuya Shiraishi

Hiroaki Katsuda

Akio Suzuki

Syotaro Ono

Yusuke Kobayashi

Shingo Sato

Takahiro Kawano

Hiro Gangi

Kohei Oasa

Kentaro Ichinoseki

Tsuyoshi Kachi

Hideyuki Ura

Yuhki Fujino

Yoshitaka Hokomoto

Masahiro Shimura

Rieko Matoba

According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, a connecting member, a first member, and an insulating member. The semiconductor member includes first to third semiconductor regions. The first semiconductor region is between the first electrode and the third semiconductor region. The first semiconductor region includes first to third partial regions. The second semiconductor region is between the first and third semiconductor regions. The second semiconductor region includes third and fourth semiconductor portions. The third semiconductor region includes first and second semiconductor portions. The second electrode is electrically connected with the third semiconductor region. The third electrode includes a first electrode portion. The first conductive member includes first to third conductive regions. The connecting member is electrically connected with the first conductive member. The first member is provided between the first electrode portion and the connecting member.

Semiconductor device and method for manufacturing the same

According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, a conductive body, and a gate electrode. The first semiconductor region is located on the first electrode and electrically connected with the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on a portion of the second semiconductor region. The conductive body is located in the first semiconductor region with an insulating part interposed. A lower surface of the conductive body includes first and second surfaces. The gate electrode is located in the insulating part. The gate electrode faces the second semiconductor region via a gate insulating layer. The second electrode is located on the second and third semiconductor regions. The second electrode is electrically connected with the second and third semiconductor regions.

Semiconductor device

A semiconductor device includes first to third electrodes, a semiconductor part, a control electrode and an insulating body. The second electrode is opposite to the first electrode. The semiconductor part is provided between the first electrode and the second electrode. The semiconductor part includes first and second trenches next to each other in a front side facing the second electrode. The second trench has a first width in a first direction directed from the first trench toward the second trench. The third electrode and the control electrode are provided inside the first trench. Another third electrode and the insulating body is provided inside the second trench. The insulating body is positioned in the second trench between said another third electrode and the second electrode. The insulating body has a second width in the first direction. The second width is equal to the first width of the second trench.

Trench-gate power MOSFET with buried field plates

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, and a semiconductor layer between the first electrode and the second electrode. A third electrode is in the semiconductor layer. The third electrode extends in a second direction orthogonal to the first direction. A plurality of fourth electrodes are connected to the second electrode and extend in the first direction into the semiconductor layer. The fourth electrodes are spaced from one another along the second direction. A fifth electrode that is electrically isolated from the first electrode and between the first electrode and the plurality of fourth electrodes. The fifth electrode extends in the second direction and contacts the lower ends of the plurality of fourth electrodes in the trench.

A semiconductor device includes a semiconductor part, first to third electrodes, and a control electrode. The first electrode is provided on a back surface of the semiconductor part. The second electrode is provided at a front surface side of the semiconductor part. The third electrode and the control electrode are provided inside a trench of the semiconductor part. The control electrode includes first and second control portions. The semiconductor device further includes first to third insulating films. The first insulating film is between the control electrode and the semiconductor part. The second insulating film covers the first and second control portions. The third insulating film is between the second electrode and the second insulating film. The third insulating film includes a portion extending between the first and second control portions. The third electrode is between the first electrode and the extension portion of the third insulating film.

Semiconductor device and method for manufacturing same

A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; and a control electrode between the semiconductor part and the second electrode. The control electrode is provided inside a trench of the semiconductor part. The control electrode is electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film. The control electrode includes an insulator at a position apart from the first insulating film and the second insulating film. The semiconductor part includes a first layer of a first conductivity type provided between the first and second electrodes, the second layer of a second conductivity type provided between the first layer and the second electrode and the third layer of the first conductivity type selectively provided between the second layer and the second electrode.

Trench-gate MOS transistor and method for manufacturing the same

A semiconductor device includes a polycrystalline silicon part buried in a termination region of a silicon layer. The polycrystalline silicon part contacts the silicon layer, has a higher crystal grain density than the silicon layer, and includes a heavy metal. The silicon layer includes a drift layer located in a cell region and the termination region. The drift layer has a lower first-conductivity-type impurity concentration than a silicon substrate. The drift layer includes a same element of heavy metal as the heavy metal included in the polycrystalline silicon part.

A semiconductor device of embodiments includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a conductive portion, a first insulating portion, a gate electrode, a second insulating portion, and a third insulating portion. The first to third semiconductor regions are provided between the first electrode and the second electrode. The conductive portion includes a first conductive portion and a second conductive portion on the second electrode side and having a lower impurity concentration than the first conductive portion. The first insulating portion is provided between the first conductive portion and the first semiconductor region. The gate electrode is provided between the second semiconductor region and the second conductive portion. The second insulating portion is provided between the second conductive portion and the gate electrode. The third insulating portion is provided between the second semiconductor region and the gate electrode.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes a semiconductor part, an first electrode, a control electrode and second electrodes. The control electrode and the second electrodes are provided between the semiconductor part and the first electrode, and provided inside trenches, respectively. The second electrodes include first to third ones. The first and second ones of the second electrodes are adjacent to each other with a portion of the semiconductor part interposed. The second electrodes each are electrically isolated from the semiconductor part by a insulating film including first and second insulating portions adjacent to each other. The first insulating portion has a first thickness. The second insulating portion has a second thickness thinner than the first thickness. The first insulating portion is provided between the first and second ones of the second electrodes. The second insulating portion is provided between the first and third ones of the second electrodes.

Semiconductor device and method of manufacturing same

A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; a control electrode provided inside a trench of the semiconductor part; a third electrode provided inside the trench; a diode element provided at the front surface of the semiconductor part; a resistance element provided on the front surface of the semiconductor part via an insulating film, the diode element being electrically connected to the second electrode; a first interconnect electrically connecting the diode element and the resistance element, the first interconnect being electrically connected to the third electrode; and a second interconnect electrically connecting the resistance element and the semiconductor part. The resistance element is connected in series to the diode element. The diode element is provided to have a rectifying property reverse to a current direction flowing from the resistance element to the second electrode.

A semiconductor device includes first and second electrodes; a semiconductor part between the first and second electrodes; a control electrode and a third electrode in a trench between the semiconductor part and the second electrode. The device further includes a first insulating part insulating the control electrode from the semiconductor part; a second insulating part insulating the third electrode from the semiconductor part; and a third insulating part insulating the third electrode from the control electrode. The second insulating part includes first and second insulating films and a portion of a third insulating film. The first insulating film is provided between the semiconductor part and the third electrode. The second insulating film is provided between the first insulating film and the third electrode. The third insulating film includes the portion between the first insulating film and the second insulating film, and another portion inside the third insulating part.

According to one embodiment, a semiconductor device includes a first electrode, first, second, and third semiconductor regions, an insulating portion, a conductive portion, a gate electrode, and a second electrode. The first semiconductor region is provided on the first electrode and electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion are arranged with a portion of the first semiconductor region, and the second and third semiconductor regions. The conductive portion is provided inside the insulating portion and arranged with the first semiconductor region. The gate electrode is provided inside the insulating portion and arranged with the second semiconductor region. The second electrode is provided on the third semiconductor region and electrically connected to the third semiconductor region.

A semiconductor device includes: a first semiconductor layer of first conductivity type; a second semiconductor layer of first conductivity type provided on the first semiconductor layer; a first semiconductor region of second conductivity type provided on the second semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a first electrode provided in a first trench, the first trench reaching the second semiconductor layer from above the first semiconductor region, the first electrode facing the first semiconductor region via a first insulating film; a second electrode provided in a second trench, the second trench reaching the second semiconductor layer from above the first semiconductor region, the second electrode facing the first semiconductor region via a second insulating film; a third electrode including a first electrode portion, a second electrode portion provided on the first electrode portion and a third electrode portion provided on the second electrode portion, the first electrode portion being provided between the first trench and the second trench, the first electrode portion reaching the first semiconductor region from above the second semiconductor region, the first electrode portion being electrically connected to the first semiconductor region and the second semiconductor region; a third semiconductor region provided between the third electrode and the second semiconductor region provided between the first insulating film and the third electrode, the third semiconductor region having a higher concentration of impurities of second conductivity type than the first semiconductor region; a fourth semiconductor region provided between the third electrode and the second semiconductor region provided between the second insulating film and the third electrode, the fourth semiconductor region having a higher concentration of impurities of second conductivity type than the first semiconductor region; and a fifth semiconductor region provided between the first semiconductor region and the third electrode, the fifth semiconductor region being provided apart from the third semiconductor region and the fourth semiconductor region, the fifth semiconductor region having a higher concentration of impurities of second conductivity type than the first semiconductor region.

Trench vertical power MOSFET with channel including regions with different concentrations

According to one embodiment, a semiconductor device includes first and second electrodes, first, second and third semiconductor regions, a first conductive portion, a gate electrode, and a second insulating portion. The first and second semiconductor regions are provided on the first semiconductor region. The third semiconductor regions are selectively provided respectively on the second semiconductor regions. The first conductive portion is provided inside the first semiconductor region with a first insulating portion interposed. The gate electrode is provided on the first conductive portion and the first insulating portion and separated from the first conductive portion. The gate electrode includes first and second electrode parts. The second insulating portion is provided between the first and second electrode parts. The second insulating portion includes first and second insulating parts. The second electrode is provided on the second and third semiconductor regions.

According to one embodiment, a semiconductor device includes first, second, and third conductive members, a semiconductor member, and a first insulating member. The semiconductor member includes a first semiconductor region provided on the first conductive member, a second semiconductor region provided on a portion of the first semiconductor region, and a third semiconductor region provided on the second semiconductor region. An impurity concentration in the third semiconductor region is greater than in the first semiconductor region. The second conductive member includes a first conductive portion electrically connected to the second and third semiconductor regions. The third conductive member is provided on an other portion of the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third conductive member. The at least a portion of the first insulating member electrically insulates between the semiconductor member and the third conductive member.

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Nonoichi Ishikawa, Japan

Hiroaki Katou