Globalwafers Japan Co., Ltd.

Hiroaki Kariyazaki

Koji Araki

Tatsuhiko Aoki

Shin Sakai

A protective-film forming method for a semiconductor substrate suppresses deterioration in the number of LPDs and adhesion of impurities such as particles by forming a new protective-film of a surfactant solution when the semiconductor substrate is detached from a polishing head. The method includes a first protective-film forming process for forming a protective-film by hydrophilizing the front surface of the polished substrate with a surfactant solution and, after the first protective-film forming process, a second protective-film forming process for forming protective-films on the front and back surface of the substrate by detaching the substrate from the polishing head in a state where at least the front surface of the polished semiconductor substrate is in contact with the liquid surface of the protective-film forming treatment liquid comprising a surfactant solution, then by immersing the polished substrate in a protective-film forming treatment liquid.

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Niigata, Japan

Hiroaki Kariyazaki