Oki Electric Industry Co., Ltd.

Gc Corporation

Hiroaki Kakinuma

Satoshi Nishikawa

Tsukasa Watanabe

Keita Sato

Yukio Kasuya

Shogo Murakami

Masaaki Sakamoto

Mamoru Yoshida

Hisashi Fukuda

Naofumi Matsumoto

Mikio Mouri

Mikio Mohri

Kensuke Fujimori

Yuna Sato

One aspect of the invention is a dental composition of a single-component dental composition including a (meth)acrylate, a photopolymerization initiator, a thiourea derivative, a water miscible organic solvent, and water, wherein the photopolymerization initiator contains a diaryliodonium salt.

Dental composition and dental restorative kit

A dental polymerizable composition includes: a first component containing a (meth)acrylate, a pentavalent vanadium compound, and a thiourea derivative; and a second component containing a (meth)acrylate and an organic peroxide.

Dental polymerizable composition

A dental polymerizable composition includes a first component containing a (meth)acrylate free of an acid group, a (meth)acrylate having a carboxyl group, a basic filler, and an organic peroxide; and a second component containing a (meth)acrylate free of an acid group, a vanadium compound, and a thiourea derivative.

A dental adhesive agent includes a polymerizable monomer; first and second inorganic particles which have been subjected to a surface treatment by a chemical compound, respectively; and a third inorganic particle. The first inorganic particle has a volume median diameter greater than or equal to 0.1 &#x3bc;m and less than or equal to 0.5 &#x3bc;m, the second inorganic particle has a volume median diameter greater than or equal to 0.6 &#x3bc;m and less than or equal to 0.9 &#x3bc;m, and the third inorganic particle has a mean primary-particle diameter greater than or equal to 5 nm and less than or equal to 50 nm. The mass ratio of the third inorganic particle with respect to the gross mass of the first inorganic particle, the second inorganic particle and the third inorganic particle is greater than or equal to 0.001 and less than or equal to 0.05.

Dental adhesive agent and method of manufacturing thereof

A photodiode is provided which can operate at a high rate and is suitable for optical communications. The photodiode with a pin-type configuration of an end surface incidence type includes a first photodiode unit having a first n-type blocking layer, a first light-absorbing layer constituted by an intrinsic semiconductor, and a first p-type blocking layer on a semiinsulating substrate; a second photodiode unit having layers of the same configuration formed thereon; a contact layer; a first electrode; and a second electrode, wherein the thickness of each light-absorbing layer is half that in a conventional monolayer photodiode. As a result, the maximum travel time of the carriers (electrons and holes) in each photodiode unit is reduced by half and the photodiode can operate at a rate higher than that of the conventional photodiode.

Photodetector device having stacked structure with improved response rate

A photodiode () and resistors () are formed on a semi-insulating InP substrate (). The photodiode () is formed by subjecting a layered structure formed by successively depositing an n-type InP cladding layer (), an n-type InGaAsP core layer (), a nondoped InGaAs active layer (), a p-type InGaAsP core layer (), and a p-type InP cladding layeron the InP substrate () to a selective etching process. The resistors () have the same layered structure as the photodiode (). Photodiode () is connected to n-type wiring lines () and a p-type wiring line (). Resistors () are connected to the n-type wiring lines () and the p-type wiring line () in parallel to the photodiode (). A side surface on the side of the photodiode () of the InP substrate () is a cleavage plane, and the cleavage plane is coated with an antireflection film (). Since the resistors () have a p-type semiconductor layer having a high resistivity, the resistors () can be formed in a big width. Consequently, change of resistance corresponding to change of the width of the resistor is small and hence matching can be easily achieved.

Optical semiconductor device and method of fabricating the same

In a contact-type image sensor comprising an array of photosensor elements for receiving light reflected from a document, and a protective layer disposed above the array of photosensor elements for protecting the array of photosensor elements when contact is made with the document, means are provided for discharging electric charges accumulated on the protective layer. This may comprise the protective layer with a relatively low resistivity or a separate conductive layer above or within the protective layer.

Direct-contact-type image sensor

A photoelectric conversion device comprises a photodiode comprising a metallic electrode formed of a metal capable of forming a Schottky junction together with amorphous silicon, such as Cr or Ni, a transparent electrode formed of ITO or the like, and an i-type hydrogenated amorphous silicon layer sandwiched in between the metallic electrode and the transparent electrode. A bias voltage is applied across the metallic electrode and the transparent electrode so that the metallic electrode is biased to a negative potential relative to the transparent electrode. A Schottky barrier formed in the interface between the metallic electrode and the i-type hydrogenated amorphous silicon layer is used as an electron blocking layer. Thus, the dark current is suppressed on a low level and the photoelectric conversion device is able to operate at a high S/N ratio.

Photoelectric conversion device

A method of making an electrophotographic member with an a-Si photoconductive layer and an a-c layer as a surface protecting layer is disclosed, wherein the a-c layer is deposited on the photoconductive layer; which a-c layer contains hydrogen or hydrogen and fluorine, and which layer is formed by a glow discharge method.

Method of making electrophotographic member with a-Si photoconductive

A method of manufacturing thin amorphous silicon hydride film is disclosed by using a plasma CVD process. The method comprises the steps of providing a substrate for supporting the amorphous silicon hydride film, providing raw material gas produced by mixing hydrogen silicide Si.sub.n H.sub.2n+2 (n.gtoreq.1) with additive gas in the concentration from about 0.1 to 10 parts per million by volume, setting a gas flow rate of the raw material gas in the range from about 200 to about 700 SCCM, applying radio frequency electric power to said gas in plasma CVD apparatus, said power being selected in the range from about 300 W to about 700 W to result in a ratio of electric power in watts to gas flow rate in SCCM of at least about 1, and growing thin amorphous silicon hydride film on the substrate from the raw material gas.

Method of manufacturing thin amorphous silicon film

A method of manufacturing an electrophotographic photoreceptor for use in a copying apparatus or a printer is disclosed. The method comprises steps of providing an electrically conductive substrate, providing a first layer provided on the substrate for preventing injection of electrons into the photoreceptor from the substrate, providing a second layer of amorphous silicon provided on the first layer for determining charging characteristic of photoreceptor and providing a third layer for preventing injection of holes into the photoreceptor from the surface thereof and for effecting passivation of the surface. The second layer is subjected to doping of boron, which is effected by introducing a mixed gas of boron and silicon with a ratio of 0.2-2 ppm into a growth chamber.

Growing community of inventors

Tokyo, Japan

Hiroaki Kakinuma