Showa Denko K.k.

Toyoda Gosei Co., Ltd.

Hiroaki Kaji

Hisayuki Miki

Kenzo Hanawa

Yasumasa Sasaki

Yoshiaki Ikenoue

Yasunori Yokoyama

Hiromitsu Sakai

Hitoshi Yokouchi

Ryoko Konta

The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

Solar cell and process for producing the same

There are provided a group III nitride semiconductor light emitting device which is constituted of a substrate, an intermediate layer formed thereon having a favorable level of orientation properties, and a group III nitride semiconductor formed thereon having a favorable level of crystallinity, and having excellent levels of light emitting properties and productivity; a production method thereof; and a lamp,

Group III nitride semiconductor light emitting device and production method thereof, and lamp

An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1&#xd7;10to 1&#xd7;10crystals/&#x3bc;m.

Group III nitride compound semiconductor stacked structure

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Chiba, Japan

Hiroaki Kaji