Seiko Epson Corporation

Mitsubishi Denki Kabushiki Kaisha

Sophia School Corporation

Hiroaki Jiroku

Mitsutoshi Miyasaka

Hidetada Tokioka

Tetsuya Ogawa

Yukio Sato

Junichi Nishimae

Katsumi Kishino

Mitsuo Inoue

Tatsuki Okamoto

A light emitting device includes a substrate, and a first columnar structure group having first columnar structures at a light emitting section and first intermediate columnar structures, a second columnar structure group having second columnar structures at a region other than the light emitting section and second intermediate columnar structures, an inter-layer insulating layer covering the first and second columnar structure groups, a conductive layer coupled to the first columnar structure group via a contact hole provided in the inter-layer insulating layer, and a first electrode terminal electrically coupled to the conductive layer. Each of the first intermediate columnar structures includes a light propagation layer and a mask layer. Each of the second intermediate columnar structures includes an insulating layer and the mask layer. The conductive layer and the first electrode terminal partially overlap the second columnar structure group in a plan view.

Light emitting device and projector

The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diametrical size in the opening of the recessed part.

Light emitting device, projector, and display

A photoelectric conversion apparatus includes a substrateand a photodiodein which a first semiconductor layer, a second semiconductor layerand a third semiconductor layerare laminated on the substratein the stated order. The second semiconductor layeris an i-type semiconductor layer, and one of the first semiconductor layerand the third semiconductor layeris an n-type semiconductor layer, and the other is a p-type semiconductor layer. Also, the first semiconductor layeris covered by the second semiconductor layer

Photoelectric conversion apparatus and electronic device

A photoelectric conversion apparatus includes a TFTprovided on one surface of a substrate, a second interlayer insulation filmprovided so as to cover the TFT, a shading filmprovided on the second interlayer insulation filmin an area overlapping the TFTwhen seen from a thickness direction of films that are formed on the substrate, a lower electrodeprovided on the second interlayer insulation film, and a semiconductor filmhaving a chalcopyrite structure provided on the lower electrode. A group 16 element is included in the shading film, the lower electrodeand the semiconductor film

Photoelectric conversion apparatus, manufacturing method of photoelectric conversion apparatus, and electronic device

An electro-optic device is provided with an substrate, in which a stress relieving film formed of a doped silicon oxide film is formed between a third interlayer insulating film formed of a non-doped silicon oxide film and a pixel electrode formed of an aluminum film or the like. The stress relieving film is formed of the doped silicon oxide film, has a thermal expansion coefficient different from that of the third interlayer insulating film, comes in contact with the third interlayer insulating film, has a thermal expansion coefficient different from that of the pixel electrode, and comes in contact with the pixel electrode. The thermal expansion coefficients are in the following relation of Third Interlayer Insulating Film&#x3c;Stress relieving Film&#x3c;Pixel Electrode.

Electro-optic device and projection-type display apparatus

An electro-optical device including: a reflection film which is formed at each of a plurality of pixels; a dielectric multi-layer film which is formed over the reflection film; a planarizing isolation film over the dielectric multi-layer film burying a step formed by a reflection film; and a first alignment film which is formed over the planarizing isolation film. The reflection film, the dielectric multi-layer film, the planarizing isolation film, and the first alignment film are formed on the surface facing the second substrate in the first substrate.

Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus

A liquid-crystal apparatus has an element substrate. This element substrate contains depressions inside, and these depressions are sealed with an insulating film, a silicon dioxide coating. To this end, the insulating film is formed by chemical vapor deposition, and this coating process lasts until voids formed in the depressions are closed at the top by the insulating film. Then, the insulating coating is ground. This grinding process lasts until the insulating film is flat, but should be terminated before the voids are opened.

Liquid-crystal apparatus, method for manufacturing the same, and electronic device

A semiconductor device includes: a substrate; a plurality of island-shaped light shielding films formed on the substrate; a first insulating film formed between the plurality of light shielding films; a second insulating film formed on the first insulating film and the plurality of light shielding films; and semiconductor elements each having a semiconductor film. The step difference is not generated between an interface between the first insulating film and the second insulating film and an interface between each of the plurality of light shielding films and the second insulating film. Each of the plurality of light shielding films is disposed between each of the semiconductor films and the substrate.

Semiconductor device comprising planarized light-shielding island films for thin-film transistors

An active matrix substrate includes a load circuit including a first active element performing a switching operation of a load, the first active element including a semiconductor film of a substantially polycrystalline state; a drive circuit including a second active element controlling driving the load, the second active element including a semiconductor film of a substantially single crystalline state, a hole being provided to one of a part and a peripheral part of the semiconductor film, the hole functioning a starting point for crystallizing the semiconductor film; and a substrate on a same plane of which the load circuit and the drive circuit are formed.

Active matrix substrate, electro-optical device, electronic device, and method for manufacturing an active matrix substrate

A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.

Process and unit for production of polycrystalline silicon film

An object is to fabricate high quality thin-film semiconductor devices at comparatively low temperatures. After providing a local heating system, an active semiconductor layer is formed, and melt crystallization is promoted by irradiating a pulsed laser onto the active semiconductor layer.

Growing community of inventors

Suwa, Japan

Hiroaki Jiroku