Honda Motor Co., Ltd.

Shindengen Electric Manufacturing Company Limited

Hiroaki Iwakuro

Hideki Hashimoto

Koichi Nishikawa

Ken-ichi Nonaka

Yusuke Fukuda

Seiichi Yokoyama

Masaaki Shimizu

Yusuke Maeyama

Yoshimitsu Saito

Kensuke Iwanaga

A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Method for manufacturing ion implantation mask, and method for manufacturing silicon carbide semiconductor device

Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same

A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Method for manufacturing junction semiconductor device

Growing community of inventors

Hanno, Japan

Hiroaki Iwakuro