Tokyo Electron Limited

Tokyo Electron Limi Ted

Hiroaki Inadomi

Shinichi Hayashi

Satoshi Okamura

Shota Umezaki

Tetsuo Fukuoka

Tetsuya Oda

Satoshi Biwa

Yasuo Kiyohara

Kouji Kimoto

Mikio Nakashima

Tooru Nakamura

Koji Yamashita

Masami Akimoto

Yuji Kamikawa

Takayuki Toshima

Takehiko Orii

Naruaki Iida

Suguru Enokida

Hiroki Ohno

Koji Tanaka

Masami Yamashita

Mitsunori Nakamori

Kazuyuki Mitsuoka

Gen You

Koji Egashira

Yosuke Kawabuchi

Kouzou Tachibana

Hiroshi Komiya

Keisuke Egashira

Takuro Masuzumi

Yoshiteru Fukuda

Kotaro Ooishi

Hideyuki Yamamoto

Tetsuro Nakahara

Nobuya Yamamoto

Katsuhiro Ookawa

Kohei Yamada

Yu Tsurifune

Yoshihisa Aoyama

Keiichi Yahata

A substrate processing apparatus includes a transfer block in which a transfer device configured to transfer a substrate is placed, and a processing block provided adjacent to the transfer block. The processing block includes a liquid film forming unit configured to form a liquid film on a top surface of the substrate which is held horizontally, and a drying unit configured to replace the liquid film with a supercritical fluid to dry the substrate. The drying unit includes a pressure vessel having therein a drying chamber for the substrate, a cover body configured to close an opening of the drying chamber, and a supporting body configured to support the substrate horizontally in the drying chamber. The supporting body is fixed to the drying chamber. The transfer device advances into the drying chamber through the opening of the drying chamber while holding horizontally the substrate having the liquid film thereon.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

A substrate processing apparatus includes multiple first substrate processing devices, one or more second substrate processing devices and a transfer unit. Each of the multiple first substrate processing devices is configured to process a substrate one by one. The one or more second substrate processing devices are configured to simultaneously process multiple substrates, which are processed in the multiple first substrate processing devices. The transfer unit is configured to simultaneously carry the multiple substrates, which are processed in the multiple first substrate processing devices, into a same second substrate processing device.

A processing fluid supplying method includes: supplying a processing fluid of a gaseous state to a circulation line; generating a processing fluid of a liquid state by cooling the processing fluid of the gaseous state in the circulation line; branching the processing fluid of the liquid state from the circulation line to a branch line; and generating a processing fluid of a supercritical state by heating the processing fluid of the liquid state in the circulation line.

Substrate processing system and method for supplying processing fluid

A substrate processing apparatus is configured to dry a substrate by replacing a liquid film formed on a top surface of the substrate, which is horizontally held, with a supercritical fluid. The substrate processing apparatus includes a pressure vessel, a cover body and a supporting body. The pressure vessel has therein a drying chamber for the substrate. The cover body is configured to close an opening of the drying chamber. The supporting body is configured to support the substrate horizontally within the drying chamber. The supporting body is fixed to the drying chamber.

A substrate processing system includes: a substrate processing apparatus configured to process a substrate with a processing fluid; and a processing fluid supply apparatus configured to supply the processing fluid to the substrate processing apparatus. The processing fluid supply apparatus includes: a circulation line, a gas supply line, a cooler, a pump, a branch line, a heating unit, and a pressure regulator.

A cleaning apparatus of a substrate processing apparatus according to an exemplary embodiment includes a nozzle and a scanner. The nozzle ejects a gas toward in an inner wall surface of a processing chamber in which a substrate is processed. The scanner causes the nozzle to scan along the inner wall surface of the processing chamber in the processing chamber.

Cleaning apparatus and cleaning method of substrate processing apparatus

A substrate processing apparatus according to an embodiment includes a transport block and a plurality of processing blocks. In the transport block, a transport device for transporting a substrate is disposed. The plurality of processing blocks are disposed adjacent to the transport block and process the substrate transported by the transport device. Each processing block includes one liquid processing unit and one drying unit. The liquid processing unit performs a liquid film forming processing so as to form a liquid film on the top surface of the substrate. The drying unit performs a supercritical drying processing in which the substrate is dried by bringing the substrate into contact with the processing fluid in a supercritical state. The liquid processing unit and the drying unit included in the same processing block are disposed on the same side with respect to the movement direction of the transport device of the transport block.

Substrate processing apparatus having processing block including liquid processing unit, drying unit, and supply unit adjacent to the transport block

Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

Liquid processing method, substrate processing apparatus, and storage medium

Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a container body, and a holding member that conveys the substrate from an outside of the container body into the container body and holds the substrate inside the container body during the processing. A substrate support pin supporting a wafer and a cooling plate cooling the holding member are provided outside the container body.

Substrate processing apparatus having cooling member

Provided is a substrate processing apparatus including a liquid processing unit that performs a liquid processing on a substrate; a drying processing unit that performs a drying processing on the substrate in a wet state; a first conveyance unit that conveys the substrate to the liquid processing unit; a second conveyance unit that conveys the substrate in the wet state from the liquid processing unit to the drying processing unit; and a third conveyance unit that conveys the substrate before the liquid processing in the liquid processing unit and to convey the substrate after the drying processing from the drying processing unit. The first and second conveyance units and the drying processing unit are disposed on a side that faces the third conveyance unit, and the liquid processing unit is disposed on a side that faces the first and second conveyance units and is opposite to the third conveyance unit.

Substrate processing apparatus

In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side.

High-pressure container, substrate processing apparatus, and method for manufacturing high-pressure container

Provided is a processing apparatus for performing a processing of a substrate to be processed using a high-pressure fluid to prevent the generation of particles and ensure airtightness in the processing container. A sealing member is installed to surround a carrying port of the processing chamber, the carrying port is closed by the cover, and the cover is restricted from retreating by the pressure in the processing chamber by a lock plate, thereby processing the wafer in the processing chamber using the high-pressure fluid. Since the sealing member is pressurized by the internal atmosphere of the processing chamber to be pressed toward the cover during the drying process, a gap between the cover and the processing chamber may be airtightly closed. Since the sealing member does not slide with respect to the processing chamber or the cover, the generation of particles is suppressed.

Processing apparatus

A substrate processing apparatus is provided including: a liquid processing unit that processes a substrate with a processing liquid; a carry-in port formed in the liquid processing unit and configured to carry-in the substrate in a dry-state before the substrate is processed with the processing liquid; a carry-out port formed in the liquid processing unit and configured to carry-out the substrate in a wet-state after completing the liquid processing; a supercritical dry processing unit that performs a dry processing for the substrate using a supercritical fluid; a first substrate transport unit that transports the substrate in a dry-state before the substrate is processed with the processing liquid to the carry-out port of the liquid processing unit; and a second substrate transport unit that transports the substrate in a wet-state after completing the liquid processing from the carry-out port of the liquid processing unit to the supercritical dry processing unit.

Growing community of inventors

Kumamoto, Japan

Hiroaki Inadomi