Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Samsung Display Co., Ltd.

Hiroaki Iijima

Masaya Hirade

Masumi Izuchi

Yuko Kishimoto

Akihito Miyamoto

Kenichi Sasai

Yoshichika Osada

Shinji Tanaka

Manabu Nakata

Seiji Takagi

Yasuhiro Arai

Tatsunori Momose

Taniyuki Furuyama

Takamichi Yokoyama

Morio Mitsuishi

An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.

Imaging device

An imaging device includes a semiconductor substrate, a first pixel, and second pixels adjacent to the first pixel. Each of the first pixel and the second pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. When the imaging device is viewed in a normal direction of the semiconductor substrate, a smallest distance of distances between the first plug in the first pixel and the first plugs in the respective second pixels is smaller than a smallest distance of distances between the first plug in the first pixel and the second plugs in the first pixel and the respective second pixels.

Imaging device including multiple photoelectric conversion layers, multiple pixel electrodes and plugs connecting substrate and the pixel electrodes

The light-emitting device includes a flexible substrate, a lower barrier layer positioned above the flexible substrate, a light-emitting element and a thin-film transistor controlling the light-emitting element positioned above the lower barrier layer, a first upper barrier layer positioned above the light-emitting element and including a first inorganic material, and a second upper barrier layer positioned above the thin-film transistor and including a second inorganic material. The first upper barrier layer and the second upper barrier layer are spaced from each other at least in a region between the light-emitting element and the thin-film transistor.

Light-emitting device comprising flexible substrate and light-emitting element

An imaging device includes a plurality of pixels and a voltage supply circuit. Each of the plurality of pixels includes: a pixel electrode; a counter electrode; a photoelectric conversion layer located between the pixel electrode and the counter electrode; and a charge blocking layer located between the pixel electrode and the photoelectric conversion layer. The charge blocking layer contains an impurity and has a first surface facing the photoelectric conversion layer and a second surface facing the pixel electrode. The concentration of the impurity on the first surface is higher than the concentration of the impurity on the second surface. The voltage supply circuit supplies a first voltage between the counter electrode and the pixel electrode in a first period and supplies a second voltage different from the first voltage between the counter electrode and the pixel electrode in a second period.

Imaging device and driving method

A composition contains a naphthalocyanine derivative represented by the following formula: where Rto Rare independently an alkyl group and Rto Rare independently an aryl group, and at least one hydrogen atom in at least one selected from the group consisting of R, R, R, and Ris substituted by an electron-withdrawing group.

Composition, photoelectric conversion element, and imaging device

An imaging apparatus includes a semiconductor substrate; a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode, and including a donor organic semiconductor material and an acceptor organic semiconductor material; a charge accumulation node positioned within the semiconductor substrate and electrically connected to the second electrode; and a first blocking layer disposed between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer has an ionization potential of lower than or equal to 5.3 eV. The first blocking layer has an electron affinity lower than an electron affinity of the acceptor organic semiconductor material included in the photoelectric conversion layer. The imaging apparatus has spectral sensitivity in a near-infrared light region having wavelengths of greater than or equal to 650 nm and less than or equal to 3000 nm.

Imaging apparatus including organic photoelectric conversion layer and hole blocking layer

A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Camera system

An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.

Imaging apparatus

A composition contains a phthalocyanine derivative represented by the following formula: where Rto Rare independently an alkyl group, M is Si, each of Rand Ris any one of substituents represented by the following formulas, Rto Rare independently an alkyl group, and Rto Rare independently an alkyl group or an aryl group: 

The light-emitting device according to one aspect of the present disclosure includes a flexible substrate, a lower barrier layer positioned above the flexible substrate, a first light-emitting element and a second light-emitting element positioned above the lower barrier layer, a first upper barrier layer positioned above the first light-emitting element and including a first inorganic material, and a second upper barrier layer positioned above the second light-emitting element and including a second inorganic material. The first upper barrier layer and the second upper barrier layer are spaced from each other at least in a region between the first light-emitting element and the second light-emitting element.

A passive-matrix display of the disclosure includes a first electrode disposed over a substrate, a second electrode disposed over the first electrode and three-dimensionally intersecting the first electrode, a first auxiliary electrode disposed between the substrate and the first electrode, three-dimensionally intersecting the first electrode and being parallel to the second electrode, and a second auxiliary electrode parallel to the first auxiliary electrode and to the second electrode, the first electrode and the first auxiliary electrode being electrically connected by a first connection portion, and the second electrode and the second auxiliary electrode being connected by a plurality of second connection portions each disposed with at least one of the first electrodes therebetween. The passive-matrix display enables voltage drop and variation in brightness to be reduced by lowering the wiring resistance of the second electrode.

Passive-matrix display and tiling display

In a display device according to the present disclosure, leader lines are led out from a display region to a leader region adjacent to the display region. In the leader region, metal portions are disposed between adjacent two of the plurality of leader lines with gaps. The gaps are formed between each of the metal portions and each of the adjacent two of the plurality of leader lines. A sealing layer covers display elements in the display region and covers the leader lines in a first sealing region of the leader region adjacent to the display region. A part of the sealing layer fills the gaps and adheres to each of the metal portions in the first sealing region.

Growing community of inventors

Osaka, Japan

Hiroaki Iijima