Sumitomo Chemical Company, Limited

Matsushita Electric Industrial Co., Ltd.

Inter-university Research Institute Corporation High Energy Accelerator Research Organization

Hiroaki Hoshikawa

Hiroshi Tabuchi

Takitaro Yamaguchi

Takayuki Tomaru

Tetsuya Norikane

Kenichi Sasaki

Toshiaki Kumagai

An anode active material for a non-aqueous electrolyte secondary battery, including: an aluminum phase; and a non-aluminum metal phase dispersed in the aluminum phase, in which the non-aluminum metal phase is formed of a non-aluminum metal compound containing one or more selected from the group consisting of Si, Ge, Sn, Ag Sb, Bi, In, and Mg, and an amount of the non-aluminum metal phase with respect to a total amount of the aluminum phase and the non-aluminum metal phase is 0.01 mass % or more and 8 mass % or less.

Anode active material for non-aqueous electrolyte secondary battery, anode, battery, and laminate

A magnetic shielding material which can decrease the thickness by having excellent conductivity even at low temperatures of, for example, 77 K or lower, in a strong magnetic field of a magnetic flux density of 1 T or more is provide. A magnetic shielding material to be used at low temperatures of 77 K or lower in the magnetic field of a magnetic flux density of 1 T or more, comprises aluminum having a purity of 99.999% by mass or more.

Magnetic shielding material for superconducting magnet

A method of fixing a seed crystal to be used for growing a silicon carbide single crystal from the seed crystal that has been fixed to a graphite base, wherein the method includes: forming a layered product by placing a metallic material whose melting point is not higher than growth temperature of the single crystal on the graphite base, disposing the seed crystal on the metallic material, and then further placing a pressing member for imposing a load on the seed crystal thereon; heat-treating the layered product at a temperature to fix the graphite base, the metallic material, and the seed crystal to each other to form one body, with the temperature being not lower than the melting point of the metallic material but not higher than the growth temperature of the single crystal; cooling the layered product; and then removing the pressing member from the layered product. The present invention provides a method of fixing a seed crystal to be used for growing a silicon carbide single crystal that inhibits the development of macroscopic defects to extend in a grown single crystal by bonding the seed crystal and a graphite base for holding the seed crystal to each other with a metal carbide layer including no voids. The present invention also provides a method of manufacturing a single crystal using the fixing method.

Method of fixing seed crystal and method of manufacturing single crystal using the same

Growing community of inventors

Niihama, Japan

Hiroaki Hoshikawa