Semiconductor Energy Laboratory Co., Ltd.

The Yokohama Rubber Co., Ltd.

Hiroaki Honda

Kosei Nei

Shunpei Yamazaki

Shinya Sasagawa

Akihisa Shimomura

Junpei Momo

Takashi Hamada

Hajime Kimura

Motomu Kurata

Satoru Okamoto

Ryota Hodo

Naoto Yamade

Naoki Okuno

Tsutomu Murakawa

Masaki Koyama

Taiga Muraoka

Hiroshi Fujiki

Kentaro Sugaya

Yusuke Shino

Atsuo Isobe

Daisuke Matsubayashi

Takuya Tsurume

Yutaka Okazaki

Yoshinobu Asami

Katsuaki Tochibayashi

Tetsuya Kakehata

Tamae Moriwaka

Erika Takahashi

Daigo Ito

Eiji Higa

Takanori Ito

Suguru Ozawa

Takashi Shingu

Feng Gao

Mari Shimizu

Mingquan Wang

Yuchao Jiao

Niancun Wang

Yulong Li

Jiang Wu

Jingwei Huang

Xiquan Jia

In a pneumatic tire, a bead core has end portions in a tire width direction formed as vertical lines along a tire radial direction. A length of the vertical lines is from 20% to 30% of a core height. In two adjacent bead core layers of first, second and third layers, the radial outer layer tire includes two or more bead cores more than the radially inner layer tire, and a misalignment amount between the bead wires each at an end portion on one side in the tire width direction is one-half of a bead wire thickness. A side on which the misalignment amount between the first and second layer bead wires is one-half of the thickness of the bead wire is opposite in the tire width direction to a side on which the misalignment amount between the second and third layer bead wires is one-half of the thickness of the bead wire.

Pneumatic tire and method for manufacturing pneumatic tire

A semiconductor device with small variations in transistor characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor provided apart from each other over the oxide; an insulator in a region between the first conductor and the second conductor over the oxide; and a conductor over the insulator. A side surface of the oxide, a top surface of the first conductor, a side surface of the first conductor, a top surface of the second conductor, and a side surface of the second conductor include regions in contact with a nitride containing silicon.

Semiconductor device

A pneumatic tire includes lug grooves having alternating first and second groove portions. The first groove portion intersects an equator, extends in a width direction, and communicates with an adjacent second groove portion. The second groove portion inclines from the first groove portion at a smaller angle relative to a circumferential direction smaller than that of the first groove portion and extends to a tread edge on one side. The first groove portion is on a stepping side with respect to an end on the tread edge side. The second groove portions curve or bend and have an average angle in an inner region smaller than that of the second groove portions in an outer region. A maximum length in the width direction of center blocks defined by narrow grooves connecting adjacent second groove portions and the lug grooves is 25%-35% of a development width.

Pneumatic tire

A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor is provided in contact with a top surface of the first oxide. The second conductor is provided in contact with the top surface of the first oxide. The first insulator is provided over the first conductor and the second conductor. The second oxide is provided in contact with the top surface of the first oxide. The second insulator is provided over the second oxide. The third conductor is provided over the second insulator. The first insulator has a function of inhibiting diffusion of oxygen. The first oxide includes indium, an element M (M is gallium, yttrium, or tin), and zinc. The first oxide includes a first region overlapping with the third conductor. A region of the first region in contact with the second oxide includes a region in which an atomic ratio of aluminum (Al) to the element M is less than 0.1.

Semiconductor device and method for manufacturing semiconductor device

In a pneumatic tire mountable on a 5&#xb0;-tapered rim, a bottom of a bead core is inclined from 0&#xb0;-5&#xb0; in a direction in which the bottom diverges toward an outer side in a radial direction as the bottom extends from an inner side in the width direction toward an outer side in the width direction. Each bead portion includes a base, a toe, and a heel. The base is inclined from 8&#xb0;-12&#xb0; in a direction in which the bead base portion diverges toward the outer side in the radial direction as the base extends from the inner side toward the outer side in the width direction. The heel has a radius of curvature from 25-30 mm. A rim cushion rubber has a modulus at 100% elongation within a range from 5.0-8.0 MPa. The toe has a displacement between before and after mounting on the rim from 9.0-13.5 mm.

A pneumatic tire includes alternating first and second groove portions. The first groove portion intersects an equator and extends in a width direction. The second groove portion inclines from the first groove portion to a tread edge at a smaller angle relative to a circumferential direction than an angle of the first groove portion relative to the circumferential direction. The first groove portion communicates with the second groove portion of the lug groove adjacent in the circumferential direction. The first groove portion is on a stepping side of each lug groove. The second groove portions are curved or bent and an average angle of the second groove portions in an inner region is smaller than in an outer region. Shallow grooves having a bent point are formed on blocks. The blocks are defined by circumferential narrow grooves connecting the second groove portions adjacent in the circumferential direction and the lug grooves.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor over the oxide; a third conductor over the oxide; a first insulator provided between the oxide and the third conductor and covering a side surface of the third conductor; a second insulator over the third conductor and the first insulator; a third insulator positioned over the first conductor and at a side surface of the second insulator; a fourth insulator positioned over the second conductor and at a side surface of the second insulator; a fourth conductor being in contact with a top surface and a side surface of the third insulator and electrically connected to the first conductor; and a fifth conductor being in contact with a top surface and a side surface of the fourth insulator and electrically connected to the second conductor. The first insulator is between the third insulator and the third conductor, and between the fourth insulator and the third conductor.

Semiconductor device and method for manufacturing the same

A semiconductor device which can suppress leakage current between a wiring and a connection electrode connected to a floating node is provided. The semiconductor device includes a first insulator, a first conductor over the first insulator, a second conductor over the first insulator, and a second insulator over the first insulator, the first conductor, and the second conductor. The first conductor and the second conductor contain a metal A (one kind or a plurality of kinds of aluminum, copper, tungsten, chromium, silver, gold, platinum, tantalum, nickel, molybdenum, magnesium, beryllium, indium, and ruthenium). The metal A is detected in an interface between the first insulator and the second insulator by an energy dispersive X-ray spectroscopy (EDX). The second insulator includes a groove for exposing the first insulator between the first conductor and the second conductor.

A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is formed over the substrate; a mask layer is formed over part of the stacked film and then dry etching treatment is performed, so that the stacked film is removed, with a region provided with the mask layer remaining, and a reaction product is formed on a side surface of the remaining stacked film; the reaction product is removed by wet etching treatment after removal of the mask layer; a source electrode and a drain electrode are formed over the stacked film; and a third oxide semiconductor layer, a gate insulating film, and a gate electrode are stacked and formed in this order over the stacked film, and the source electrode and the drain electrode.

Semiconductor device comprising a plurality of oxide semiconductor layers

A transistor with favorable electrical characteristics is provided. A transistor with stable electrical characteristics is provided. A semiconductor device having a high degree of integration is provided. Side surfaces of an oxide semiconductor layer in which a channel is formed are covered with an oxide semiconductor layer, whereby impurity diffusion from the side surfaces of the oxide semiconductor into the inside can be prevented. A gate electrode is formed by a damascene process, whereby transistors can be miniaturized and formed at a high density.

Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor

Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers

Automobile tire

Growing community of inventors

Odawara, Japan

Hiroaki Honda