Sharp Kabushiki Kaisha Corporation

Hiroaki Furukawa

Atsushi Hachiya

Yuhichi Saitoh

Tomohisa Aoki

Kazuya Tsujino

Tomoko Teranishi

A display device includes a pixel circuit and a light-emitting element, the pixel circuit including: a transistor with a first structure including a crystalline silicon semiconductor film and a first gate electrode; and a transistor with a second structure including an oxide semiconductor film and a second gate electrode, the display device further includes: a first interlayer insulation film; and a second interlayer insulation film, wherein the pixel circuit includes: a drive transistor that has the first structure: and a capacitive element, the capacitive element includes: a first capacitor electrode electrically connected to a first gate electrode of the drive transistor; a second capacitor electrode opposite the first capacitor electrode; and a dielectric film between the first capacitor electrode and the second capacitor electrode, and the dielectric film is disposed in a different layer than are the first interlayer insulation film and the second interlayer insulation film.

Display device and method of manufacturing display device

An oxide semiconductor layer includes a second channel region and a second conductor region. The lower metal layer includes a contact wire in contact with the second conductor region. The upper metal layer includes an upper wire. A second interlayer insulating film is provided with a second contact hole overlapping an upper wire and the contact wire. The second conductor region and the upper wire electrically connect together through the contact wire.

Display device having a first transistor including a crystalline silicon semiconductor layer and a second transistor including an oxide semiconductor layer

A crystalline silicon semiconductor layer includes a first channel region and a second conductor region. An oxide semiconductor layer includes a second channel region and a second conductor region. An lower metal layer includes a lower wire. The lower wire is in contact with a first conductor region in a first contact hole. The first conductor region and the second conductor region are electrically connected together through the lower wire.

Display device

One conductor region of a crystalline silicon semiconductor layer in a first transistor is electrically connected to one conductor region of an oxide semiconductor layer in a second transistor through a first contact hole and a second contact hole communicating with each other.

Provided are an active matrix substrate having a reduced driving voltage and excellent adhesion between a dielectric layer and a water-repellent layer and a microfluidic device including the substrate. The active matrix substrate includes an array electrode, a dielectric layer covering the array electrode, and a first water-repellent layer in this order on a first substrate. The dielectric layer includes a silicon nitride film located on the side in contact with the first water-repellent layer, and the silicon nitride film has a surface layer region containing oxygen in the surface on the side in contact with the first water-repellent layer.

Active matrix substrate, microfluidic device provided with same, method for producing said active matrix substrate, and method for producing said microfluidic device

An active matrix substrate includes: a first substrate; and first electrodes, a dielectric layer covering the first electrodes, and a first water-repelling layer in this sequence on the first substrate, wherein the dielectric layer has a multilayer structure including two or more layers and includes a silicon nitride film and a metal-oxide film between the silicon nitride film and the first water-repelling layer, and the silicon nitride film has an oxygen-containing surface layer region on a surface thereof that is in contact with the metal-oxide film.

Method of manufacturing active matrix substrate

An active matrix substrate includes a demultiplexer circuit which includes multiple TFTs. Each TFT includes a gate electrode, an oxide semiconductor layer that includes a source contact area, a drain contact area, and an area between a source and a drain that includes a channel region, a channel protection layer that covers only a portion of the area between the source and the drain, a source electrode that is brought into contact with the source contact area, and a drain electrode that is brought into contact with the drain contact area. At a cross-section in a channel length direction, of each TFT, an end portion facing toward the channel region, of one of the source and drain electrodes is brought into contact with the channel protection layer, and an end portion facing toward the channel region, of the other is positioned at a distance away from the channel protection layer.

Active matrix substrate and demultiplexer circuit

A semiconductor device (T,B) includes: a substrate (); a first metal layer () supported on the substrate (), the first metal layer () including a plurality of first wires (); an insulating layer () provided on the first metal layer (); a second metal layer () provided on the insulating layer (), the second metal layer () including a plurality of second wires (); an insulative protection layer () covering part of each of the plurality of second wires (), and an electrically-conductive layer () provided on the insulative protection layer (). In a cross section including a boundary between a first region (R) in which the insulative protection layer () is provided and a second region (R) in which the insulative protection layer () is not provided, a surface of the insulating layer () which is on the insulative protection layer () side has a step between two of the second wires which adjoin each other.

Semiconductor device including substrate which is used in display devices

The present invention allows a current leakage path to be reliably disconnected even when a conductive film residue occurs between data wiring lines. An interlayer insulating film of a TFT panel includes an interlayer insulating film opening at a position corresponding to a pattern edge of an insulating protective film.

Substrate device and method for manufacturing same

A semiconductor layer () according to the present invention includes a top surface (), a bottom surface () and a side surface (). In a portion of the side surface () which is in the vicinity of a border with the top surface (), a tangential line (T) to the portion is inclined with respect to the normal to the bottom surface (). In a certain portion of the side surface () which is farther from the top surface () than the portion in the vicinity of the border, an angle made by a tangential line (T) to the certain portion and a plane defined by the bottom surface () is larger than an angle made by the tangential line (T) to the portion in the vicinity of the border and the plane defined by the bottom surface ().

Growing community of inventors

Sakai, Japan

Hiroaki Furukawa