Omnivision Technologies, Inc.

Hiroaki Ebihara

Rui Wang

Zheng Yang

Liang Zuo

Tiejun Dai

Satoshi Sakurai

Min Qu

Xuelian Liu

Lihang Fan

Zhenfu Tian

Selcuk Sen

Eiichi Funatsu

Chun-Ming Tang

Chao-Fang Tsai

Hiroki Ui

Shan Chen

Zhiyong Zhan

Chengcheng Xu

Kenny Geng

Tao Sun

Sang Joo Lee

Nobuhiro Yanagisawa

Jiayu Guo

Naoki Kitazawa

Duli Mao

Sohei Manabe

Keiji Mabuchi

Zhe Gao

Yu-Shen Yang

Takayuki Goto

Ling Fu

Kazufumi Watanabe

Wanqing Xin

Nijun Jiang

Peter Bartkovjak

Xueqing Wang

Sangjoo Lee

Yi Liu

Tomoyasu Tate

Amit Mittra

John Brummer

Kohei Harada

Ryuichi Moriizumi

Kevin Johnson

Teijun Dai

Yandong Chen

An imaging system comprises a pixel array configured to generate a plurality of image charge voltage signals in response to incident light, and readout circuitry coupled to the pixel array, the readout circuitry including a plurality of column unit cells. Each column unit cell comprises at least one of a plurality of comparators, wherein each comparator is coupled to receive the ramp signal from the ramp generator through a ramp signal line. Each column unit cell also comprises a compensation current unit coupled to the ramp signal line, each compensation current unit comprising a compensation current source and a compensation current switch coupled to the compensation current source, wherein the compensation current source and the compensation current switch are coupled between a first node on the ramp signal line and a second node.

Distributed ramp linearity compensation circuit

A pixel includes a photosensor configured to photogenerate charge in response to incident light. A floating diffusion is configured to receive the charge photogenerated by the photosensor. A transfer transistor is coupled between the floating diffusion and the photosensor. A dual floating diffusion (DFD) transistor is coupled to the floating diffusion. A binning node is coupled to the DFD transistor. A floating diffusion interconnect grid is coupled to the binning node of the pixel and a binning node of a second pixel. The pixel and the second pixel are included in a pixel array. The DFD transistor is configured to couple the binning node to the floating diffusion when activated during a readout operation of the pixel array to provide a binned readout, and the DFD transistor is configured not to couple the binning node to the floating diffusion when deactivated to provide a full resolution readout.

Method and apparatus to efficiently read super-binned array out from sensor of higher resolution

A pixel circuit, including a pixel array comprising a plurality of pixels, a plurality of analog to digital converters (ADCs), where during a pixel data readout the plurality of ADCs is communicatively coupled to a respective pixel of the plurality of pixels to receive image data from the respective pixel of the plurality of pixels, a plurality of judge blocks, wherein each judge block is communicatively coupled to a respective ADC of the plurality of ADCs and wherein each judge block is configured to select and transmit gain data based on comparing an output of the respective ADC to a predetermined threshold for the respective ADC, and an image signal processor (ISP) configured to receive outputs from the plurality of ADCs, and combine the outputs of the plurality of ADCs to produce a combined converted value for the respective pixel.

Adaptive data selection for DCG / DAG

A local ramp buffer includes a deep N− well layer disposed in a P− substrate beneath a surface of the P− substrate, a P− well disposed between the surface of the P− substrate and the deep N− well layer, and an N− well structure disposed in the P− substrate and coupled to the deep N− well layer. The N− well structure is disposed between the surface of the P− substrate and the deep N− well layer. The P− well is disposed inside an opening in the N− well structure. The N− well structure and the deep N− well layer are configured to isolate the P− well within the opening. A source follower transistor is disposed in the P− well. The source follower transistor includes a gate terminal coupled to the N− well structure and a ramp generator.

Deep N-well driven ramp buffer

An arithmetic logic unit (ALU) includes a front end latch stage coupled to a Gray code (GC) generator to latch GC outputs, a signal latch stage coupled to latch outputs of the front end latch stage, a GC to binary stage coupled to generate a binary representation of the GC outputs, an adder stage including first inputs coupled to receive outputs of the GC to binary stage, a pre-latch stage coupled to latch outputs of the adder stage, and a feedback latch stage coupled to latch outputs of the pre-latch stage in response to a feedback latch enable signal. The feedback latch enable signal is one of a correlated multiple sampling (CMS) feedback enable signal and a non-CMS feedback enable signal. The ALU is configured to perform CMS calculations in response to the CMS feedback enable signal and perform non-CMS calculations in response to the non-CMS feedback enable signal.

Adaptive correlated multiple sampling

A pixel cell readout circuit comprises a ramp generator having a ramp generator output. A first gain network is coupled to the ramp generator output and configured to provide a first variable comparator gain. A second gain network is coupled to the ramp generator output and configured to provide a second variable comparator gain. A first comparator has a first input coupled to the first gain network. The first comparator further has a second input selectively coupled to a first bitline and selectively coupled to a second bitline. A second comparator has a first input coupled to the second gain network. The second comparator further has a second input selectively coupled to the first bitline and selectively coupled to the second bitline.

Dual gain column structure for column power area efficiency

A readout circuit includes a comparator having a first input coupled to receive a ramp signal from a ramp generator and a second input coupled to receive an analog image data signal from one of a plurality of bitlines. The comparator is configured to generate a comparator output in response to a comparison of the ramp signal and the analog image data signal. A sampling circuit has a first input coupled to receive a sampling control signal and a second input coupled to receive the comparator output. The sampling circuit is configured to generate a sampling output. A counter has a first input coupled to receive a counter control signal and a second input coupled to receive one of the comparator output and a signal from the sampling circuit. The readout circuit is configured to perform correlated multiple sampling (CMS) calculations or non-CMS calculations in response to the sampling output.

A tail current source of a comparator includes a first transistor and a second transistor configured to operate as current sources, wherein the first and second transistors are coupled between a tail node of the comparator and a voltage node, and wherein the tail comprises a node coupled to first and second inputs of the comparator. The tail current source also includes a switch configured to selectively couple the second transistor between the tail and the voltage node, and a bias voltage source coupled to gates of the first and second transistors. The switch is configured to be on during an analog-to-digital conversion (ADC) reset signal period and an ADC image signal period, and the switch is configured to be off during an auto-zero period, a period between the ADC reset signal and image signal periods, and a period after the ADC image signal period.

Dynamic current control for column ADC

A pixel cell readout circuit comprises a comparator with a current mirror having first and second current paths, a first input transistor coupled to the first current path, a low conversion gain (LCG) second input transistor selectively coupled to the second current path, and a high conversion gain (HCG) second input transistor selectively coupled to the second current path. The pixel cell readout circuit further comprises a gain network coupled between a gate node of the first input transistor and a ramp generator output, wherein the gain network is configured to provide a variable comparator gain to the comparator, an LCG auto-zero switch coupled between a drain node and a gate node of the LCG second input transistor, and an HCG auto-zero switch coupled between a drain node and a gate node of the HCG second input transistor.

An imaging device includes a pixel array of pixel circuits arranged in rows and columns. Bitlines are coupled to the pixel circuits. Clamp circuits are coupled to the bitlines. Each of the clamp circuits includes a clamp short transistor to a power line and a respective one of the bitlines. The clamp short transistor is configured to be switched in response to a clamp short enable signal. A first diode drop device is coupled to the power line. A clamp idle transistor is coupled to the first diode drop device such that the first diode drop device and the clamp idle transistor are coupled between the power line and the respective one of the bitlines. The clamp idle transistor is configured to be switched in response to a clamp idle enable signal.

Bitline settling and power supply rejection ratio in a nine cell pixel image sensor with phase detection autofocus

A ramp buffer circuit includes a ramp buffer input device having an input coupled to receive a ramp signal. A current monitor is circuit coupled to a power line and the ramp buffer input device to generate a current monitor signal in response to an input current conducted through the ramp buffer input device. A corner bias circuit is coupled to the current monitor circuit to generate an assist bias voltage in response to the current monitor signal. A bias current source is coupled to an output of the ramp buffer input device. An assist current source is coupled to the corner bias circuit and coupled between the output of the ramp buffer input device and ground to conduct an assist current from the output of the ramp buffer input device to ground in response to the assist bias voltage.

Calibration circuit for ramp settling assist circuit in local ramp buffer circuit

In an embodiment, a method of reducing resistance-capacitance delay along photodiode transfer lines of an image sensor includes forking a plurality of photodiode transfer lines each into a plurality of sublines coupled together and to a first decoder-driver at a first end of each subline; and distributing selection transistors of a plurality of multiple-photodiode cells among the plurality of sublines. In embodiments, the sublines may be recombined at a second end of the sublines and driven by a second decoder-driver at the second end.

Circuit and method for image artifact reduction in high-density, high-pixel-count, image sensor with phase detection autofocus

A ramp generator includes an operational amplifier having an output to generate a ramp signal. An integration current source is coupled to a first input and a reference voltage is coupled to a second input of the operational amplifier. A feedback capacitor is coupled between the first input and the output of the operational amplifier. A monitor circuit is coupled to the first and second inputs of the operational amplifier to generate an output flag in response to a comparison of the first and second inputs. A trimming control circuit is configured to generate a trimming signal in response to the output flag. An assist current source is configured to conduct an assist current from the output of the operational amplifier to ground in response the trimming signal generated by the trimming control circuit.

Trimming control circuit for current integration ramp DAC settling assist circuit

A global shutter readout circuit includes a reset transistor coupled between a reset voltage and a bitline. A pixel enable transistor is coupled between the reset transistor and a source follower transistor. First and second terminals of the pixel enable transistor are coupled together in response to a pixel enable signal coupled to a third terminal of the pixel enable transistor. A first storage transistor coupled to the second terminal of the pixel enable transistor and the gate of the source follower transistor. A first storage capacitor is coupled to the first storage transistor. A second storage transistor coupled to the second terminal of the pixel enable transistor and the gate of the source follower transistor. A second storage capacitor is coupled to the second storage transistor. A row select transistor is coupled to the source follower transistor to generate an output signal from the global shutter readout circuit.

Voltage domain global shutter readout circuit

A ramp buffer circuit includes an input device having an input coupled to receive a ramp signal. A bias current source is coupled to an output of the input device. The input device and the bias current source are coupled between a power line and ground. An assist current source is coupled between the output of the input device and ground. The assist current source is configured to conduct an assist current from the output of the input device to ground only during a ramp event generated in the ramp signal.

Ramp settling assist circuit in local ramp buffer circuit

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Santa Clara, CA, United States of America

Hiroaki Ebihara