Toto Ltd.

Hiroaki Ashizawa

Masakatsu Kiyohara

Ryoto Takizawa

Junichi Iwasawa

Hironori Hatono

Toshihiro Aoshima

Takuma Wada

Atsushi Kinjo

Ryoichi Nishimizu

Yuuki Takahashi

Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus as well as a semiconductor manufacturing apparatus. A composite structure including a base material and a structure that is provided on the base material and has a surface to be exposed to a plasma atmosphere, in which the structure has an yttrium-aluminum oxide as a main component, and has a lattice constant a calculated by the following formula (1) being larger than 12.080 Å:·()  (1)where d represents a lattice plane spacing, and (hkl) represents a Miller index. This structure features excellent low-particle generation and is suitably used a member for a semiconductor apparatus.

Composite structure and semiconductor manufacturing apparatus including composite structure

Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises YAlOas a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

Disclosed is provision of a ceramic coat having an excellent low-particle generation as well as a method for assessing the low-particle generation of the ceramic coat. A composite structure including a substrate and a structure which is formed on the substrate and has a surface, wherein the structure includes a polycrystalline ceramic and the composite structure has luminance Sa satisfying a specific value calculated from a TEM image analysis thereof, can be suitably used as an inner member of a semiconductor manufacturing apparatus required to have a low-particle generation.

Composite structure, semiconductor manufacturing apparatus and display manufacturing apparatus provided with composite structure

A structure includes a polycrystalline substance of yttrium fluoride, wherein an average crystallite size in the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2&#x3b8;=24.3&#xb0; by X-ray diffraction as &#x3b1;, and taking a peak intensity detected near diffraction angle 2&#x3b8;=25.7&#xb0; as &#x3b2;, a peak intensity ratio &#x3b1;/&#x3b2; of the structure is not less than 0% and less than 100%.

Structure

According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has an orthorhombic crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2&#x3b8;=32.0&#xb0; by X-ray diffraction as &#x3b3;, and taking a peak intensity detected near diffraction angle 2&#x3b8;=32.8&#xb0; as &#x3b4;, a peak intensity ratio &#x3b3;/&#x3b4; is not less than 0% and not more than 150%.

According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has a rhombohedral crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity of rhombohedron detected near diffraction angle 2&#x3b8;=13.8&#xb0; by X-ray diffraction as r1, taking a peak intensity of rhombohedron detected near diffraction angle 2&#x3b8;=36.1&#xb0; as r2, and taking a proportion &#x3b3;1 as &#x3b3;1(%)=r2/r1&#xd7;100, the proportion &#x3b3;1 is not less than 0% and less than 100%.

According to the present invention, a structure made of yttrium oxide is formed on a surface of a substrate comprises yttrium oxide polycrystals as a main component, a boundary layer made of hyaline does not substantially exist on a boundary face between crystals which form the structure, and both a cubic system and a monoclinic system exist in the crystal system of the yttrium oxide polycrystals. With this, it is possible to adjust the hardness of the structure made of yttrium oxide formed on a surface of a substrate to be larger than that of an yttrium oxide sintered body.

Growing community of inventors

Kitakyushu, Japan

Hiroaki Ashizawa