Sony Corporation

Hiroaki Abe

Shinichi Agatsuma

Nozomu Hoshi

Youichi Suzuki

AlGaInP system laser device () and AlGaAs system laser device () are arranged so that respective stripes () are parallel to each other. The AlGaInP system laser device () is placed to (011) plane () side from the centerline of the substrate and the AlGaAs system laser device () is placed to the (0{overscore (1)}{overscore (1)}) plane () side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) () side of laser light. Substrate () is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane () toward the (011) plane () with respect to the (100) plane at a certain angle (&#x3b8; off) within the range of 2 degrees and 15 degrees. Optical axis Lof the AlGaInP system laser device () is parallel to optical axis Lof the AlGaAs system laser device () and approaches at an angle of about 0.5 degrees.

Semiconductor light emitting device and optical disc apparatus using the same

A laser diode capable of reducing an operating current and thereby improving long term reliability and able to be produced by a simpler process than in the prior art and a semiconductor light emitting device and a method of production thereof; wherein a first clad layer, an active layer, and a second clad layer are formed on a substrate, a third clad layer and a contact layer are formed on a current injection stripe region thereon, an electrode is formed so as to be connected to the second clad layer in regions other than the current injection stripe region and to be connected to the contact layer, and, at the time of emitting laser light from a laser light oscillation region by injection of a first current to the electrode via the contact layer by application of voltage, a second current which is smaller than the first current is injected in regions other than the current injection stripe region via the second clad layer, so that a laser diode is configured wherein currents at ends of the laser light oscillation region are controlled to generate self pulsation

Laser diode, semiconductor light-emitting device, and method of production thereof

A semiconductor laser enabling a higher output without lowering the performance of the laser such as its reliability, that is, a Fabry-Perot type semiconductor laser having, successively grown on a substrate, a first cladding layer of a first conductivity type, an active layer having at least one quantum well layer and at least two barrier layers, and a second cladding layer of a second conductivity type, a pair of facing end faces of said active layer constituting a resonator, wherein an impurity and holes due to the impurity are diffused in at least one region near the end faces of said active layer, and the quantum well layer and the barrier layers constituting said active layer are made mixed-crystals.

Growing community of inventors

Miyagi, Japan

Hiroaki Abe