Taiwan Semiconductor Manufacturing Comp. Ltd.

Hiranmay Biswas

Kuo-Nan Yang

Chung-Hsing Wang

Chin-Shen Lin

Chi-Yeh Yu

Stefan Rusu

Yi-Kan Cheng

A conductive line structure includes: first and second offset sets of long pillars that are substantially coaxial on an intra-set basis; a third set of offset short pillars, the short pillars being: overlapping of long pillars in the first and second sets; and organized into groups of first quantities of the short pillars; each of the groups being overlapping of and electrically coupled between a pair of one of the long pillars in the first set and a one of the long pillars in the second set such that, in each of the groups, each short pillar being overlapping of and electrically coupled between the pair; and each long pillar in each of the first and second sets being overlapped by a second quantity of short pillars in the third set and being electrically coupled to same; and the first quantity being less than the second quantity.

Conductive line structures and method of forming same

A device includes a power grid (PG) arrangement including: first and second segments in a first conductive layer which are conductive and extend in a first direction, the first segments being configured for a first reference voltage and the second segments being configured for a second reference voltage; the first and second segments being interspersed relative to a second direction, the second direction being perpendicular to the first direction; and relative to the second direction, the first segments being symmetrically spaced apart relative to each other, the second segments being symmetrically spaced apart relative to each other, and the second segments being substantially asymmetrically spaced between corresponding adjacent ones of the first segments.

Semiconductor device including standard-cell-adapted power grid arrangement

A method of manufacturing a semiconductor device includes forming a set of cells; forming a PG layer, including forming a first metallization layer including forming first conductor portions and second conductor portions, corresponding ones of the first conductor portions being arranged in first pairs; corresponding ones of the second conductor portions being arranged in second pairs; the cells being arranged to overlap at least one of the first and second conductor portions of the first metallization layer relative to the first direction; and forming a second metallization layer over the first metallization layer, the second metallization layer including forming third conductor portions and fourth conductor portions, the cells being arranged in a repeating relationship that each cell overlaps, an intersection of a corresponding one of the first or second pairs with at least a corresponding one of the third conductor portions or a corresponding one of the fourth conductor portions.

Method of manufacturing a semiconductor device including PG-aligned cells

A method (of generating a revised layout diagram of a conductive line structure for an IC) including: for a first set of pillar patterns that represents portions of an M(i) layer of metallization and where i is a non-negative number, the first set including first and second pillar patterns which extend in a first direction, are non-overlapping of each other with respect to the first direction, are aligned with each other and have a first distance of separation, determining a first distance of separation as between corresponding immediately adjacent members of the first set; recognizing that the first distance is less than a transverse routing (TVR) separation threshold for an M(i+j) layer of metallization, where j is an integer and j≥2; and increasing the first distance so as to become a second distance which is greater than the TVR separation threshold of the M(i+j) layer.

Method of forming merged pillar structures and method of generating layout diagram of same

A method of forming an IC structure includes forming first and second power rails at a power rail level. First metal segments are formed at a first metal level above the power rail level. Each first metal segment of the plurality of first metal segments overlap one or both of the first power rail or the second power rail. First vias are formed between the power rail level and the first metal level. Second metal segments are formed at a second metal level above the first metal level. At least one second metal segment of the plurality of second metal segments overlaps the first power rail. At least one second metal segment of the plurality of second metal segments overlaps the second power rail. A plurality of second vias are formed between the first metal level and the second metal level.

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Hsinchu, Taiwan

Hiranmay Biswas