Tokyo Electron Limited

Hiraku Murakami

Nobutaka Sasaki

Hiroshi Tsujimoto

Takanori Banse

Ryoichi Yoshida

Keigo Toyoda

Shigeru Senzaki

Masaru Isago

There is provision of a cleaning method of a plasma processing apparatus including a plasma treatment chamber for applying plasma treatment to a substrate. The method includes: insulating a part of the plasma treatment chamber, generating plasma of fluorocarbon gas in the plasma treatment chamber, and removing deposits on a non-plasma surface of a space outside of the plasma treatment chamber, by the plasma of the fluorocarbon gas introduced from the plasma treatment chamber to the outside space.

Method of cleaning plasma processing apparatus

A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.

Plasma processing apparatus and method for processing object

Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.

Plasma processing method

Growing community of inventors

Miyagi, Japan

Hiraku Murakami