Tokyo Electron Limited

Hiraku Ishikawa

Takaaki Matsuoka

Teruyuki Hayashi

Eiichi Nishimura

Hirokazu Ueda

Eisuke Morisaki

Yasuhiro Tobe

Masahiro Oka

Yoshimasa Watanabe

Yuji Ono

Syuhei Yonezawa

Tadakazu Murai

There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

Film forming method, boron film, and film forming apparatus

Functional groups on the outermost surface of an amorphous hydrocarbon film are substituted. The amorphous hydrocarbon film is formed on a silicon substrate Sub, which is coated with a low-k film. A heat treatment is performed on the amorphous hydrocarbon film in a non-silane gas atmosphere. Next, a heat treatment is performed on the amorphous hydrocarbon film in a silane gas atmosphere immediately after the heat treatment in a non-silane gas atmosphere. After the heat treatment, a film, such as a hard mask, is formed.

Method of aftertreatment of amorphous hydrocarbon film and method for manufacturing electronic device by using the aftertreatment method

A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100&#xb0; C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

Pattern-forming method and method for manufacturing semiconductor device

An amorphous carbon film, which has excellent etching resistance and is capable of reducing reflectance when a resist film is exposed to light, is form. A method for manufacturing a semiconductor device includes forming an object film to be etched on a wafer, supplying a process gas containing a CO gas and an Ngas into a processing container, forming an amorphous carbon nitride film from the supplied CO gas and Ngas, forming a silicon oxide film on the amorphous carbon nitride film, forming an ArF resist film on the silicon oxide film, patterning the ArF resist film, etching the silicon oxide film by using the ArF resist film as a mask, etching the amorphous carbon nitride film by using the silicon oxide film as a mask, and etching the object film to be etched by using the amorphous carbon nitride film as a mask.

Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film, method for manufacturing semiconductor device, and storage medium in which control program is stored

A sealing film forming method is capable of forming a sealing film having high moisture permeability resistance in a shorter time and at lower cost. The sealing film forming method for forming a sealing filmthat seals an EL deviceincludes forming a first inorganic layeron a surface of the EL device; forming a hydrocarbon layeron the first inorganic layer; flattening the hydrocarbon layerby softening or melting the hydrocarbon layer; curing the hydrocarbon layer; and forming a second inorganic layerthicker than the first inorganic layeron the hydrocarbon layerafter curing the hydrocarbon layer

Sealing film forming method, sealing film forming device, and light-emitting device

A method for processing an amorphous carbon film which has been formed on a substrate and wet-cleaned after being dry-etched includes preparing the substrate having the wet-cleaned amorphous carbon film and modifying a surface of the amorphous carbon film, before forming an upper layer on the wet-cleaned amorphous carbon film.

Method for processing amorphous carbon film, and semiconductor device manufacturing method using the method

An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.

Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage medium

The present invention is an aftertreatment method further applied to an amorphous carbon film to which a treatment including heating is performed after the film has been formed on a substrate. The treatment of preventing oxidation of the amorphous carbon film is performed immediately after the treatment including heating.

Aftertreatment method for amorphous carbon film

Provided is a plasma processing apparatus including a processing vessel accommodating a target object; a microwave generator configured to generate a microwave; a waveguide configured to induce the microwave to the processing vessel; a planar antenna having a plurality of microwave radiation holes through which the microwave induced to the waveguide is radiated toward the processing vessel; a microwave transmission plate configured to serve as a ceiling wall of the processing vessel and transmit the microwave passed from the microwave radiation holes of the planar antenna; a processing gas inlet unit configured to introduce a processing gas into the processing vessel; and a magnetic field generating unit positioned above the planar antenna and configured to generate a magnetic field within the processing vessel and control a property of plasma of the processing gas by the magnetic field, the plasma being generated by the microwave within the processing vessel.

Plasma processing apparatus, plasma processing method and storage medium

Disclosed is a semiconductor device including: a substrate; a wiring layer formed on the substrate and made of copper or a copper alloy; a copper diffusion barrier film formed on the wiring layer and made of an amorphous carbon film formed by CVD using a processing gas containing a hydrocarbon gas; and a low-k insulating film formed on the copper diffusion barrier film.

Semiconductor device and manufacturing method thereof

Substrate processing methods involve forming an insulating film of amorphous carbon on a substrate by supplying acetylene gas and hydrogen gas with a volume ratio of 4:3 to 4:1, or alternatively, butyne gas, into a process vessel in which the substrate is accommodated. The methods further involve generating a plasma inside of the process vessel by emitting a microwave. The pressure inside of the process vessel is maintained to be 4.0 Pa or less and the substrate is maintained to be 200&#xb0; C. or less while the insulating film is formed.

Substrate processing methods

The present invention ensures a uniform concentration of a plasma excitation gas supplied to a plasma generation region while preventing the plasma excitation gas from turning into plasma before supply. In a plasma film forming apparatus for forming a film on a substrate using plasma, a flat-plate structure partitioning the inside of a processing container into two, upper and lower, regions is disposed between a high frequency wave supply unit and a substrate mounting unit in the processing container. The plasma excitation gas is supplied into the processing container from the lower side toward the region on the high frequency wave supply unit side, and the structure is formed with a source gas supply port for supplying a source gas for film formation in the region on the mounting unit side and an opening for allowing plasma generated in the region on the high frequency wave supply unit side to pass to the region on the mounting unit side.

Plasma film-forming apparatus and plasma film-forming method

A wafer W is placed on a lower electrode provided inside a processing chamber of a CVD apparatus and is heated to achieve a temperature equal to or greater than 350&deg; C. and lower than 450&deg; C. SiH and SiF with both their flow rates set at 20 sccm, B H with its flow rate set at 7 sccm, O with its flow rate set at 200 sccm and Ar with its flow rate set at 400 sccm are introduced into the processing chamber , and a pressure within the range of 0.01 Torr&tilde;10 Torr is set. 20 W/cm power at a frequency of 27.12 MHz and 10 W/cm power at a frequency of 400 kHz are respectively applied to an upper electrode and the lower electrode to generate plasma, and a layer insulating film constituted of an SiOB film containing F is formed on the wafer W. With the B atoms incorporated into the molecular skeleton in the network structure of the SiOB film and the F atoms lowering the hygroscopicity by preventing formation of Si&mdash;OH bonds and the like, a dielectric constant of approximately 3.0 is achieved.

Growing community of inventors

Sendai, Japan

Hiraku Ishikawa