Tdk Corporation

Asahi Kasei Microdevices Corporation

Sae Magnetics (h.k.) Limited

Hiraku Hirabayashi

Kazuya Watanabe

Keisuke Uchida

Tsuyoshi Umehara

Yuta Saito

Masaki Nagata

Norikazu Ota

Shunji Saruki

Kohei Honma

Kenichi Takano

Kenzo Makino

Masanori Sakai

Shinichirou Mochizuki

Kunihiro Ueda

Yohei Hirota

Kazuma Yamawaki

Naoki Ohta

Yongfu Cai

Kenkichi Anagawa

Hayato Miyashita

Taro Oike

Yoshimitsu Wada

Takamitsu Sakamoto

Yosuke Komasaki

Hiroshi Naganuma

Kiyoshi Noguchi

Katsuki Kurihara

Yoshihiro Kudo

Yoshiyuki Mizoguchi

Shuhei Miyazaki

Shin Narushima

Toshihide Suto

Homare Tokida

Koji Shimazawa

Kosuke Tanaka

Hiroshi Yamazaki

Masanori Yoshida

Nobuya Oyama

Kazuhiko Maejima

Satoshi Abe

Hidekazu Kojima

Hiroki Matsukuma

Yoshitaka Okutsu

Yuji Ito

Eiji Komura

Tetsuya Roppongi

Naoto Matono

Takeo Kagami

Hiroshi Kiyono

Yoshiaki Tanaka

Tomonaga Nishikawa

Keita Kawamori

Hiromichi Umehara

Takakazu Imai

Koichi Otani

Shusuke Ichihashi

Yuichi Watabe

Kazuhiro Ishida

Keisuke Takasugi

Tetsuya Hiraki

Seiji Yari

Yohei Koyanagi

Yuichiro Yamaji

Eiichi Omata

Daichi Takano

This sensor unit includes a base having a substantially-rectangular planar shape including a first side and a second side that are substantially orthogonal to each other, and a plurality of first sensors provided on the base and arranged on a first axis. The first axis is substantially parallel to the first side and passes through a center position of the base.

Sensor unit

A magnetic field detection apparatus includes a magnetoresistive effect element and a conductor. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first and second end parts. The conductor includes a first part and a second part that each extend in a second axis direction inclined with respect to the first axis direction. The conductor is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in a third axis direction orthogonal to the second axis direction. The first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both of the second axis direction and the third axis direction.

Magnetic field detection apparatus and current detection apparatus

At a reference position within a first plane, a magnetic field to be detected has a first direction that changes within the first plane. A magnetic sensor includes an MR element. The MR element includes a magnetic layer having first magnetization that can change in direction within a second plane. The first plane and the second plane intersect at a dihedral angle α other than 90°. The magnetic field to be detected can be divided into an in-plane component parallel to the second plane and a perpendicular component perpendicular to the second plane. The in-plane component has a second direction that changes with a change in the first direction. The direction of the first magnetization changes with a change in the second direction. A detection value depends on the direction of the first magnetization.

Magnetic sensor and magnetic sensor system

Provided is a magnetic field detection device that includes a first and second soft magnetic bodies, and a magnetic detector. The first and second soft magnetic bodies extend along a first plane and are disposed in confronted relation in a third direction. The first plane includes both a first direction and a second direction orthogonal to the first direction. The third direction is orthogonal to both the first and second directions. The magnetic detector is provided between the first and second soft magnetic bodies in the third direction.

Magnetic field detection device

A magnetic sensor includes a magnetic sensor chip that includes a magnetoresistive effect element and a sealed part. The magnetoresistive effect element includes a free layer and a pinned layer. The sealed part has a first surface and a second surface, which is opposite the first surface. The shape of the sealed part in the plan view from the first surface side is substantially quadrilateral. The substantially quadrilateral shape has a first side and a second side, which are substantially parallel to each other. In the plan view, from the first surface side of the sealed part, the magnetization direction of the pinned layer, in a state in which the external magnetic field is not applied on the magnetoresistive effect element, is inclined with respect to an approximately straight line found through the least squares method using a plurality of points arbitrarily set on the first side.

Magnetic sensor having magnetoresistive effect element with inclined magnetization direction of pinned layer

A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element. The MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a first side surface including a first portion and a second portion, the first portion and the second portion having different angles with respect to the first inclined surface or the second inclined surface.

Magnetic sensor including magnetic detection element disposed on inclined surface

An inspection apparatus includes a stage having a placing surface, a first magnetic field generator, and a second magnetic field generator. The first magnetic field generator is configured to be changeable in orientation and to singly generate a first magnetic field. The second magnetic field generator is configured to be changeable in orientation and to singly generate a second magnetic field. The first and second magnetic field generators are configured to cooperatively generate a composite magnetic field in cooperation.

Inspection apparatus and method for inspecting magnetic sensor

An MR element includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first magnetic layer has a magnetic shape anisotropy set in a first reference direction, and has a magnetization whose direction changes depending on an external magnetic field, the magnetization being oriented in a first magnetization direction in a state where the external magnetic field is not applied. The second magnetic layer has a magnetic shape anisotropy set in a second reference direction, and has a magnetization whose direction changes depending on the external magnetic field, the magnetization being oriented in a second magnetization direction in a state where the external magnetic field is not applied.

Magnetoresistive element, magnetoresistive device and magnetic sensor

A magnetic sensor device includes a first detection circuit, a second detection circuit, and a processor. The processor is configured to execute first generation processing for generating a first initial detection value, second generation processing for generating a second initial detection value, first correction processing, second correction processing, and determination processing. The first correction processing is processing for correcting the first initial detection value and updating the first initial detection value. The second correction processing is processing for correcting the second initial detection value and updating the second initial detection value. The processor executes the determination processing after alternately executing the first correction processing and the second correction processing.

Magnetic sensor device

A magnetic sensor includes a first insulating layer, a second insulating layer, a third insulating layer, a lower coil element located on an opposite side of the first insulating layer from the second insulating layer, and a second MR element. The second MR element includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer are located on an opposite side of the third insulating layer from the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.

Sensor including a plurality of insulating layers made of different insulating materials

A magnetic sensor includes an insulating layer, a coil element disposed on the insulating layer, and a first insulating film. The insulating layer includes a first inclined surface and a second inclined surface. The coil element includes a first side surface and a second side surface. The first side surface includes a first portion and a second portion, the second portion being disposed at a position farther from a top surface of a substrate than a position where the first portion is disposed. The first portion is inclined so as to intersect with the first and second inclined surfaces, and is also inclined so as to be closer to the second side surface at positions closer to the top surface of the substrate. The first insulating film covers the first portion.

Magnetic sensor

A magnetic field generator generates a detection-target magnetic field related to an angle to be detected. An angle sensor includes a first and a second magnetic sensor and a processor. The first magnetic sensor detects, at a first detection position, a first applied magnetic field including the detection-target magnetic field, and generates first detection information having a correspondence with the angle to be detected. The second magnetic sensor detects, at a second detection position, a second applied magnetic field including the detection-target magnetic field, and generates second detection information having a correspondence with the angle to be detected. The processor generates an angle detection value by performing arithmetic processing using the first and second detection information. The ratio of a strength of the detection-target magnetic field at the second detection position to a strength of the detection-target magnetic field at the first detection position is 1.65 or more.

Angle sensor system

An operation processing apparatus that calculates a rotation angle based on a first output signal and a second output signal, which differ in signal frequency from each other, is provided with a first cross-coupled operation part that performs a first cross-coupled operation and a second cross-coupled operation part that performs a second cross-coupled operation based on the first and second output signals. A first Lissajous curve generation part generates a first Lissajous curve based on the result of operation by the first cross-coupled operation part, and a second Lissajous curve generation part generates a second Lissajous curve based on the result of operation by the second cross-coupled operation part. A rotation angle computing part calculates the rotation angle based on the first Lissajous curve and the second Lissajous curve.

Operation processing apparatus, angle sensor and power steering apparatus

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Tokyo, Japan

Hiraku Hirabayashi