Electronics and Telecommunications Research Institute

Konkuk University Industrial Cooperation Corp

Him Chan Oh

Chi Sun Hwang

Sang Hee Park

Byoung Gon Yu

Ji Sun Kim

Kee Chan Park

Jae Eun Pi

Sung Min Yoon

Byeong Hoon Kim

Min Woo Oh

Tao Ren

Hong Kyun Leem

Min Ki Ryu

Hong Kyung Leem

Youn Kyung Kim

Joon Dong Kim

Disclosed are a self-aligned thin film transistor capable of simultaneously improving an operation speed and stability and minimizing a size thereof by forming source and drain electrodes so as to be self-aligned, and a fabrication method thereof. The method of fabricating a thin film transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a gate insulator, and a gate layer on a substrate; forming a photoresist layer pattern for defining a shape of a gate electrode on the gate layer; etching the gate layer, the gate insulator, and the active layer by using the photoresist layer pattern; depositing a source and drain layer on the etched substrate by a deposition method having directionality; and forming a gate electrode and self-aligned source electrode and drain electrode by removing the photoresist layer pattern.

Self-aligned thin film transistor and fabrication method thereof

Disclosed are a self-aligned thin film transistor controlling a diffusion length of a doping material using a doping barrier in a thin film transistor having a self-aligned structure and a method of manufacturing the same. The self-aligned thin film transistor with a doping barrier includes: an active layer formed on a substrate and having a first doping region, a second doping region, and a channel region; a gate insulating film formed on the channel region; a gate electrode formed on the gate insulating film; a doping source film formed on the first doping region and the second doping region; and a doping barrier formed between the doping source film and the first doping region and between the doping source film and the second doping region.

Self-aligned thin film transistor with doping barrier and method of manufacturing the same

Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Inverter, NAND gate, and NOR gate

Disclosed is a method for manufacturing an oxide thin film transistor, including: forming a gate electrode on a substrate on which a buffer layer is formed; forming a gate insulation layer on an entire surface of the substrate on which the gate electrode is formed; forming an oxide semiconductor layer on the gate insulation layer; forming a first etch stop layer on the oxide semiconductor layer; forming a second etch stop layer on the first etch stop layer by an atomic layer deposition method; patterning the first etch stop layer and the second etch stop layer, or forming a contact hole, through which a part of the oxide semiconductor layer is exposed, in the first etch stop layer and the second etch stop layer; forming a source electrode and a drain electrode on the first etch stop layer and the second etch stop layer; and forming a passivation layer on the entire surface of the substrate on which the source electrode and the drain electrode are formed.

Method for manufacturing oxide thin film transistor

Disclosed is a DC voltage conversion circuit of a liquid crystal display apparatus, including: a main pumping circuit including a plurality of thin film transistors and configured to output voltage for driving a liquid crystal display apparatus when the plurality of thin film transistors are alternately turned on or off; and a switch control signal generator configured to control voltages applied to gates of the plurality of thin film transistors by inversion of a clock signal, in which each thin film transistor is turned on when positive gate-source voltage is applied thereto, and turned off when negative gate-source voltage is applied thereto.

DC voltage conversion circuit of liquid crystal display apparatus

Growing community of inventors

Seoul, South Korea

Him Chan Oh