Nxp B.v.

Ams Ag

Ams International Ag

Hilco Suy

Peter G Steeneken

Martijn Goossens

Zoran Zivkovic

Nebojsa Nenadovic

Roel Daamen

Jozef Thomas Martinus Van Beek

Kim Phan Le

Klaus Reimann

Olaf Wunnicke

David Van Steenwinckel

Dimitri Soccol

Frederik Willem Maurits Vanhelmont

Twan Van Lippen

Friso Jedema

Agata Sakic

Filip Frederix

Micha In't Zandt

Frans De Jong

Geert Calaerts

Hans Ten Cate

Renie De Kok

Andreis Valter

Rodolf Herfst

Franciscus Petrus Widdershoven

A sensor arrangement () comprises a capacitive sensor () with a first electrode line (), a second electrode line () and a third electrode line () and a sensitive layer () arranged at the first, the second and the third electrode line (). The sensor arrangement () comprises a readout circuit () that comprises a capacitance-to-digital converter (), is coupled to the first, the second and the third electrode line () and is configured to generate a first measurement signal (S) using the first and the second electrode line () and a second measurement signal (S) using at least the third electrode line ().

Sensor arrangement and method for generating measurement signals

The sensor semiconductor device comprises a substrate () with a main surface (), a sensor region () on or above the main surface, a coating layer () above the main surface, and a trench () formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.

Sensor semiconductor device and method of producing a sensor semiconductor device

A capacitive environmental sensor and a method for determining the presence of a target substance (e.g. water) using differential capacitive measurements. The sensor includes a semiconductor substrate having a surface. The sensor also includes a plurality of sensor electrodes located on the surface. The electrodes are laterally separated on the surface by intervening spaces. The sensor further includes a sensor layer covering the electrodes. The sensor layer has a permittivity that is sensitive to the presence of the target substance. The surface of the substrate, in a space separating at least one pair of electrodes, includes a recess. The surface of the substrate, in a space separating at least one pair of electrodes, does not include a recess. The sensor may be provided in a Radio Frequency Identification (RFID) tag. The sensor may be provided in a smart building.

Capacitive sensor

A method for providing an integrated circuit such that first and second sensing electrodes respectively have at their surfaces first and second receptor molecules for selectively binding to first and second analytes of interest; exposing the integrated circuit to a sample potentially comprising at least one of the first and second analytes, providing a first bead having a first electrical signature attached to a first molecule having a conformation/affinity for binding to the first sensing electrode dependent on the presence of the first analyte; providing a second bead having a second electrical signature attached to a second molecule having a conformation/affinity for binding to the second sensing electrode dependent on the presence of the second analyte; and determining the presence of the electrical signature of the first and/or second bead(s) on the first and second sensing electrodes respectively. An IC for implementing this method.

Analyte detection method and analyte detection integrated circuit

One example discloses a multi-sensor assembly, comprising: a first temperature sensor, having a first thermal profile; a second temperature sensor, having a second thermal profile different from the first thermal profile; wherein the first and second temperature sensors are mounted on a set of lead-frames; wherein the first and second temperature sensors include a first heat path input coupled to an ambient environment, and a second heat path input coupled to at least one of the lead-frames; and wherein the first and second sensors and set of lead-frames are included in a single multi-sensor assembly. Another example discloses a method of manufacture for the multi-sensor assembly.

Multi-sensor assembly with tempature sensors having different thermal profiles

The present invention provides a capacitive MEMS device comprising a first electrode lying in a plane, and a second electrode suspended above the first electrode and movable with respect to the first electrode. The first electrode functions as an actuation electrode. A gap is present between the first electrode and the second electrode. A third electrode is placed intermediate the first and second electrode with the gap between the third electrode and the second electrode. The third electrode has one or a plurality of holes therein, preferably in an orderly or irregular array. An aspect of the present invention integration of a conductive, e.g. metallic grating as a middle (or third) electrode. An advantage of the present invention is that it can reduce at least one problem of the prior art. This advantage allows an independent control over the pull-in and release voltage of a switch.

RF MEMS switch with a grating as middle electrode

A MEMS switch in which at least first, second and third signal lines are provided over the substrate, which each terminate at a connection region. A lower actuation electrode arrangement is over the substrate. A movable contact electrode is suspended over the connection regions for making or breaking electrical contact between at least two of the three connection regions and an upper actuation electrode provided over the lower actuation electrode. The use of three of more signal lines enables a symmetrical actuation force to be achieved or enables multiple switch functions to be implemented by the single movable electrode, or both.

MEMS switch

A MEMS device comprises first and second opposing electrode arrangements (), wherein the second electrode arrangement () is electrically movable to vary the electrode spacing between facing sides of the first and second electrode arrangements. At least one of the facing sides has a non-flat surface with at least one peak and at least one trough. The height of the peak and depth of the trough is between 0.01t and 0.1t where t is the thickness of the movable electrode.

MEMS devices

A MEMS switch (), and methods of fabricating thereof, the switch comprising: a sealed cavity (); and a membrane (); wherein the sealed cavity () is defined in part by the membrane (); and the membrane is a 5 metallic membrane (), for example consisting of a single type of metal or metal alloy. The MEMS switch () may comprise a top electrode (), for example extending into the cavity (), located in a hole () in the metallic membrane (). Fabrication may include providing a sacrificial layer () in a partly defined cavity (). The bending stiffness of the membrane () may behigher along an RF line () than along a line () perpendicular to the RF line (), for example by virtue of the cavity () being elliptical.

MEMS switch and fabrication method

A MEMS switch comprises a substrate, first and second signal lines over the substrate, which each terminate at a connection region, a lower actuation electrode over the substrate and movable contact electrode suspended over the connection regions of the first and second signal lines. An upper actuation electrode is provided over the lower actuation electrode. The connection regions of the first and second signal lines are at a first height from the substrate, wherein signal line portions extending from the connection regions are at a lower height from the substrate, and the lower actuation electrode is provided over the lower height signal line portions, so that the lower height signal line portions are buried. The area available for the actuation electrodes becomes larger and undesired forces and interference are reduced.

A MEMS device comprises first and second opposing electrodes (), wherein the second electrode () is electrically movable to vary the electrode spacing between facing first sides of the first and second electrodes. A first gas chamber () is provided between the electrodes, at a first pressure, and a second gas chamber () is provided on the second, opposite, side of the second electrode at a second pressure which is higher than the first pressure. This arrangement provides rapid switching and with damping of oscillations so that settling times are reduced.

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Eindhoven, Netherlands

Hilco Suy