Tokyo Electron Limited

Hikaru Yoshitaka

Yoshihiro Kato

Makoto Aoki

Hidenori Miyoshi

Kohei Kawamura

Hiroyuki Takahashi

Takashi Kobayashi

Takashi Akahori

Yasuhiro Oshima

Koichi Takatsuki

Shuuichi Ishizuka

Gishi Chung

Shigeo Ashigaki

Yoichi Inoue

Syoichi Abe

Tadashi Goto

That surface of an electrode platewhich is opposite to a susceptorhas a projection shape. The electrode plateis fitted in an openingof shield ringat a projection. At this time, the thickness of the projectionis approximately the same as the thickness of the shield ringAccordingly, the electrode plateand the shield ringform substantially the same plane. The major surface of the projectionhas a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plateis formed of, for example, SiC.

Plasma process device and plasma process method

A first channel is formed in the side of a first diffusion plate which is on that side of a gas inlet tube and a recess is formed in the side which is on that side of an electrode plate. The first channel and the recess communicate with each other through a plurality of inlet ports. The first channel and the inlet ports form a gas flow passage L which leads to the recess from the gas inlet tube. As a process gas supplied from the gas inlet tube passes through the gas flow passage L, it is supplied, dispersed, to a hollow portion formed between the recess and the electrode plate.

Plasma process system and plasma process method

A hard mask of SiCN is formed on a fluorine-containing carbon film . Thus, the adhesion of the hard mask to the fluorine-containing carbon is improved and inhibited from being peeled off. The hard mask of SiCN can hare a higher etch-selectivity than those of conventional hard masks, and can have a lower dielectric constant than that of SiN or SiC.

Semiconductor device and method of manufacturing the same

An inorganic insulating film of SiC is formed on a fluorine-containing carbon film by a chemical vapor deposition process using SiF and C H as source gases. By using SiF and CF containing no hydrogen (H) as source gases, H inhibited from being incorporated into the inorganic insulating film forming a hard mask . Thus, H having diffused outwardly from the inorganic insulating film is bonded to fluorine (F) in the fluorine-containing carbon film to form HF which inhibits the corrosion of the inorganic insulating film and so forth. Thus, it is possible to inhibit the deterioration of the adhesion of the hard mask formed of the inorganic insulating film to other layers, such as the fluorine-containing carbon film

Method of manufacturing semiconductor device

Growing community of inventors

Tsukui-gun, Japan

Hikaru Yoshitaka