Nissan Chemical Corporation

Nissan Chemical Industries Limited

Hikaru Tokunaga

Keisuke Hashimoto

Rikimaru Sakamoto

Takafumi Endo

Makoto Nakajima

Hiroto Ogata

Daigo Saito

Yuto Hashimoto

Takahiro Kishioka

Hirokazu Nishimaki

Yasushi Sakaida

Tomoya Ohashi

Hayato Hattori

Masashi Ohno

Satoshi Hamada

A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

Composition for forming resist underlayer film with improved film density

A resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed. Also a method for manufacturing a polymer suitable for the resist lower layer film formation composition, a resist lower layer film in which the formation composition is used, and a method for manufacturing a semiconductor device. A resist lower layer film formation composition containing: a solvent; and a reaction product between an aromatic compound having 6-60 carbon atoms and a carbon-oxygen double bond of an oxygen-containing compound having 3-60 carbon atoms. The oxygen-containing compound has, in one molecule, one partial structure: —CON< or —COO—. In the reaction product, one carbon atom of the oxygen-containing compound links two of the aromatic compounds.

Resist underlayer film-forming composition using carbon-oxygen double bond

A composition for forming a resist underlayer film includes: (A) a crosslinkable compound represented by formula (I) and (D) a solvent. [In the formula, n is an integer of 2-6, the n-number of Z each independently are monovalent organic groups including a mono-, di-, tri-, tetra-, penta-, or hexaformylaryl group, the n-number of A each independently represent —OCHCH(OH)CHO— or (BB), and T is an n-valent hydrocarbon group and/or repeating unit of a polymer optionally having at least one group selected from the group made of a hydroxy group, an epoxy group, an acyl group, an acetyl group, a benzoyl group, a carboxy group, a carbonyl group, an amino group, an imino group, a cyano group, an azo group, an azide group, a thiol group, a sulfo group, and an allyl group and optionally interrupted by a carbonyl group and/or an oxygen atom.]

Resist underlayer film-forming composition

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and Band Bare each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or Band Boptionally form a ring with a carbon atom bonded to Band B.

Resist underlayer film-forming composition containing indolocarbazole novolak resin

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

Photocurable composition and method for producing semiconductor device

A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

Resist underlayer film-forming composition including cyclic carbonyl compound

A resist underlayer film-forming composition revealing high reflow properties while applying and heating the composition on a substrate, allowing a flat application on a multi-level substrate thus forming a flat film. The composition includes a copolymer having a repeating structural unit of the following Formula (1) and/or a repeating structural unit of the following Formula (2) and an organic solvent: (in Formulae (1) and (2), Ris a functional group of Formula (3); in Formula (3), Qand Qare each independently a hydrogen atom or a Calkyl group, and * is a dangling bond to an oxygen atom; and in Formula (2), Xis a Corganic group, and i and j are each independently 0 or 1).

A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R, R, and Rin Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R, R, and Rmay be the same or different and may bond to each other to form a ring structure.

Resist underlayer film-forming composition containing amide solvent

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40. The nitrogen-containing structure contains a reactive nitrogen-containing functional group or reactive carbon-containing functional group produced by irradiation with ultraviolet light; and the sulfur-containing structure contains an organic sulfur radical or carbon radical produced by irradiation with ultraviolet light.

A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): where the composition is cured by photoirradiation or by heating at 30&#xb0; C.-300&#xb0; C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

Stepped substrate coating composition containing compound having curable functional group

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; Xrepresents &#x2014;N(R)&#x2014;; Xrepresents &#x2014;N(R)&#x2014;; Xrepresents &#x2014;CH(R)&#x2014;; Xrepresents &#x2014;CH(R)&#x2014; etc.; R, R, R, and Rrepresent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R, R, R, and Rrepresent hydrogen atoms, hydroxy groups, alkyl groups, etc.; Rand Rrepresent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

Resist underlayer film forming composition using a fluorene compound

A stepped substrate-coating composition for forming a coating film having filling property of a pattern and flattening property including a compound (E) having a partial structure (I) and a partial structure (II) having a hydroxy group formed by a reaction of an epoxy group with a proton-generating compound, a solvent (F), and a crosslinkable compound (H), wherein the partial structure (I) is from Formulae (1-1) to (1-5) or including a partial structure of Formula (1-6) combined with a partial structure of Formula (1-7) or (1-8), and the partial structure (II) is of the following Formula (2-1) or (2-2), wherein the compound (E) contains the epoxy and hydroxy group at a molar ratio (epoxy group)/(hydroxy group) of 0 or more and 0.5 or less, and contains the partial structure (II) so the molar ratio (partial structure (II))/(partial structure (I)+partial structure (II)) is 0.01 or more and 0.8 or less. 

Crosslinkable compound-containing photocurable stepped substrate-coating composition

There are provided a plasma-curable multi-level substrate coating film-forming composition for forming a coating film having planarity on a substrate, wherein the composition can fill a pattern sufficiently. A plasma-curable multi-level substrate coating film-forming composition comprising a compound (E) and a solvent (F), wherein the compound (E) has at least one partial structure selected from partial structures (I) of the following Formulae (1-1) to (1-7): wherein R, R, R, R, and Rare each independently a Calkylene group, a Carylene group (the alkylene group and the arylene group are optionally substituted with one or more amide or amino groups), an oxygen atom, a carbonyl group, a sulfur atom, &#x2014;C(O)&#x2014;NR&#x2014;, &#x2014;NR&#x2014;, or a divalent group composed of any combination of these; Ris each independently a nitrogen atom, or a trivalent group composed of a combination of a nitrogen atom and at least one group selected from the group consisting of a Calkylene group, a Carylene group (the alkylene group and the arylene group are optionally substituted with one or more amide or amino groups), an oxygen atom, a carbonyl group, a sulfur atom, &#x2014;C(O)&#x2014;NR&#x2014;, and &#x2014;NR&#x2014;; R, R, R, and Rare each independently a hydrogen atom, a Calkyl group, or a monovalent group composed of a combination of a hydrogen atom and at least one group selected from the group consisting of a Calkylene group, an oxygen atom, a carbonyl group, &#x2014;C(O)&#x2014;NR&#x2014;, and &#x2014;NR&#x2014;; Ris a hydrogen atom or a Calkyl group; Ris a hydrogen atom, a Calkyl group, or a Calkylcarbonyl group; n is a number of repeating units of 1 to 10; and a dotted line is a chemical bond to the adjacent atom.

Multi-level substrate coating film-forming composition containing plasma-curable compound based on unsaturated bonds between carbon atoms

A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein Ris a Calkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.)

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Toyama, Japan

Hikaru Tokunaga