Fujitsu Semiconductor Limited

Hikaru Ohira

Tamotsu Owada

Hirosato Ochimizu

Tomoyuki Kirimura

A semiconductor device has a semiconductor substrate having a first surface and a second surface, a through electrode penetrating through the semiconductor substrate and having a protrusion protruding from the second surface, and an insulation layer on the second surface, which covers the side surface of the protrusion, has an opening through which to expose the end surface of the protrusion, and has a thickness greater than the length of the protrusion.

Semiconductor device and manufacturing method of semiconductor device

A method of manufacturing a semiconductor device includes: forming a first electrode on a first semiconductor substrate; coating the semiconductor substrate with an insulating material having a first viscosity at a first temperature, having a second viscosity lower than the first viscosity at a second temperature higher than the first temperature, and having a third viscosity higher than the second viscosity at a third temperature higher than the second temperature; and forming a first insulating film by curing the insulating material. In this method, the forming the first insulating film includes: bringing the insulating material to the second viscosity by heating the insulating material under a first condition; and bringing the insulating material to the third viscosity by heating the insulating material under a second condition. The first condition and the second condition are different in their temperature rising rate.

Semiconductor device and method of manufacturing the same

A semiconductor device manufacture method includes: forming a first film above a semiconductor substrate; forming a first mask film above the first film; patterning the first mask film; executing a plasma process for a side wall of the patterned first mask film to transform the side wall into a transformed layer; after the plasma process, forming a second mask film covering the first mask film; etching the second mask film to remove the second mask film above the first mask film and leave the second mask film formed on the side wall; after the etching the second mask film, removing the transformed layer; and after the removing the transformed layer, etching the first film by using the first mask film and the second mask film as mask.

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Akishima, Japan

Hikaru Ohira