Other

Kit Co. Ltd.

Bosquet Silicon Corp.

Sharp Kabushiki Kaisha Corporation

Matsushita Electric Industrial Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Japan Science and Technology Agency

Matsushita Electronics Corporation

Japan Science and Technology Corporation

Nisshin Kasei Co., Ltd.

Hikaru Kobayashi

Yuki Kobayashi

Kenji Yoneda

Shigeki Imai

Hideomi Koinuma

Kazuhiko Inoguchi

Takafumi Shimatani

Hiroshi Tsubomura

Toru Higo

Yayoi Kanatani

Takashi Namura

One composite composition of the present invention contains: a silicon fine particle; and a silicon suboxide (SiO, wherein x is ½, 1, or 3/2) and/or a mixed composition of the silicon suboxide and silicon dioxide, at least partially covering the surface of the silicon fine particle.

Composite composition

An exemplary hydrogen production apparatusaccording to the present invention includes a grinding unitconfigured to grind a silicon chip or a silicon grinding scrapto form silicon fine particles, and a hydrogen generatorconfigured to generate hydrogen by causing the silicon fine particlesto contact with as well as disperse in, or to contact with or dispersed in water or an aqueous solution. The hydrogen production apparatuscan achieve reliable production of a practically adequate amount of hydrogen from a start material of silicon chips or silicon grinding scraps that are ordinarily regarded as waste. The hydrogen production apparatus thus effectively utilizes the silicon chips or the silicon grinding scraps so as to contribute to environmental protection as well as to significant reduction in cost for production of hydrogen that is utilized as an energy source in the next generation.

Hydrogen production apparatus, hydrogen production method, silicon fine particles for hydrogen production, and production method for silicon fine particles for hydrogen production

One solid preparation of the present invention mainly includes silicon fine particles, and has a capability of generating hydrogen. In addition, one specific example of the solid preparation mainly includes silicon fine particles having a crystallite diameter principally of 1 nm or more and 100 nm or less, and exhibits a capability of generating hydrogen in an amount of 3 ml/g or more when brought into contact with a water-containing liquid having a pH value of 7 or more. In this solid preparation, hydrogen is generated when the silicon fine particles are brought into contact with a water-containing liquid having a pH value of 7 or more. Therefore, taking advantage of the characteristics of the solid preparation, generation of hydrogen is promoted in, for example, a gastrointestinal tract where the pH value is 7 or more due to secretion of pancreatic fluid after passage through the stomach after oral ingestion.

Solid preparation, method for producing solid preparation, and method for generating hydrogen

One compound () according to the present invention contains silicon fine particles having a capability of generating hydrogen or aggregates of the silicon fine particles. The compound that contains the silicon fine particles or the aggregates having a capability of generating hydrogen is capable of generating hydrogen in the body of, for example, an animal that has ingested the compound. For a plant, the compound can be disposed or charged into, for example, moisture (water-containing liquid) or fertilizer to be provided to the plant, to supply the plant with hydrogen generated from the compound.

Compound, production method therefor, and hydrogen supply method

A layered solid formulation () as one hydrogen supply material () according to the present invention includes silicon fine particles having a capability of generating hydrogen and aggregates of the silicon fine particles, and a physiologically acceptable medium () that gets contact with the silicon fine particles or the aggregates thereof. The hydrogen supply material () is a hydrogen supply material for bringing the hydrogen into contact with the skin and/or the mucous membrane through the medium ().

Hydrogen supply material and production therefor, and hydrogen supply method

Preparation, method for producing preparation, and method for generating hydrogen

Solid preparation, method for producing solid reparation, and method for generating hydrogen

Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid () that oxidizes and dissolves a target substrate () to be treated is supplied to the surface of said substrate () to be treated; a positioning step in which a mesh-like transferring member () provided with a catalyst material is positioned near or in contact with the surface of the substrate () to be treated; and a concave or convex forming step in which a concave or convex is formed on the surface of the substrate () to be treated via the aforementioned supply and positioning steps. As opposed to existing manufacturing methods, which manufacture semiconductor devices provided with semiconductor substrates with highly arbitrary (i.e. not very reproducible) concaves or convexes, by forming an appropriate concave or convex or mesh at the transferring member step, the disclosed method can stably manufacture semiconductor devices provided with semiconductor substrates that have concaves or convexes of a fixed level.

Method and device for manufacturing semiconductor devices, semiconductor device and transfer member

Disclosed is a thin-film transistor () manufacturing method that includes a process for forming a nitrate film () that includes residual nickel () on a surface thereof, by bringing a nitric acid solution into contact with a polysilicon layer (); and a process for removing the nitrate film () that includes residual nickel () from the polysilicon layer () surface. With this surface treatment process, a polysilicon layer () with reduced concentration of a surface residual nickel () is provided, and a thin-film transistor () having excellent surface smoothness is attained.

Semiconductor apparatus and manufacturing method of same

In a manufacturing method of a thin film transistor (), the oxide film forming step is performed whereby: a process-target substrate () having a surface on which a gate oxide film () should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a gate oxide film () is formed through direct oxidation of polycrystalline silicon () on the process-target substrate (). With this step, a silicon dioxide film () is formed while growing a silicon dioxide film () on the process-target substrate. Accordingly, the interface between the polycrystalline silicon () and the gate oxide film () is kept clean. The gate oxide film () is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor () contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device

In a manufacturing method of a thin film transistor (), the oxide film forming step is performed whereby: a process-target substrate () having a surface on which a gate oxide film () should be formed is immersed in an oxidizing solution containing a; active oxidizing species; and a gate oxide film () is formed through direct oxidation of polycrystalline silicon () on the process-target substrate (). With this step, a silicon dioxide film () is formed while growing a silicon dioxide film () on the process-target substrate. Accordingly, the interface between the polycrystalline silicon () and the gate oxide film () is kept clean. The gate oxide film () is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor () contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

After cleaning a surface of a silicon substrate (), impurities and natural oxide film existing on the silicon substrate () are removed by soaking the silicon substrate () in a 0.5%-by-volume HF aqueous solution for 5 minutes. The silicon substrate () is rinsed (cleaned) with ultrapure water for five minutes. Then, the silicon substrate () is soaked for 30 minutes in azeotropic nitric acid heated to an azeotropic temperature of 120.7&#xb0; C. In this way, an extremely thin chemical oxide film () is formed on the surface of the silicon substrate (). Subsequently, a metal film () (aluminum-silicon alloy film) is deposited, followed by heating in a hydrogen-containing gas at 200&#xb0; C. for 20 minutes. Through the heat processing in the hydrogen-containing gas, hydrogen reacts with interface states and defect states in the chemical oxide film (), causing disappearance of the interface states and defect states. As a result, the quality of the film can be improved. Thus, it is possible to form a high quality (with low leak current density), extremely thin silicon dioxide film on the silicon substrate at a low temperature with excellent film-thickness controllability.

Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device

A cyano process of introducing cyano ions (CN ) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.

Silicon photoelectric conversion device, method of manufacturing the same and method of processing the same

Silicon photoelectric conversion device, method of fabricating the same and method of processing the same

Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0&deg; C. to 700&deg; C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.

Growing community of inventors

Kyoto, Japan

Hikaru Kobayashi