Nissan Chemical Industries Limited

Hikaru Imamura

Makoto Nakajima

Yasushi Sakaida

Satoshi Takei

Rikimaru Sakamoto

Takahiro Kishioka

Keisuke Hashimoto

Kazuya Ebara

There is provided a novel material used for solar cells that can contribute to the improvement in maximum output of solar cells. A film-forming material for forming a light-collecting film on a transparent electrode of a solar cell, including an aromatic group-containing organic polymer compound (A), wherein the film-forming material exhibits an index of refraction of 1.5 to 2.0 at a wavelength of 633 nm and a transmittance of 95% or more with respect to light having a wavelength of 400 nm, and a solar cell obtained by coating a cured film made from the film-forming material on a surface of a transparent electrode.

Film-forming material

There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where Rand Rare independently a group of &#x2014;X&#x2014;Y (where X is an oxygen atom, a Calkylene group or a group of &#x2014;OCH&#x2014; (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of Rand Ris the group of &#x2014;X&#x2014;Y and another thereof is an aryl group, a methyl group, an ethyl group or a Ccycloalkyl group); and an organic solvent.

Composition for forming resist underlayer film for lithography and production method of semiconductor device

There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

Method for manufacturing semiconductor device using quadruple-layer laminate

Growing community of inventors

Toyama, Japan

Hikaru Imamura