Matsushita Electric Industrial Co., Ltd.

Toyota Jidosha Kabushiki Kaisha

Hikaru Ikeda

Toshio Ishizaki

Hiroaki Kosugi

Kaoru Ishida

Hiroshi Haruki

Hideki Yagita

Mitsuhiro Fujita

Takashi Fujino

Nobuo Fuse

Masaki Kobayashi

Hiroshi Otsuki

Hiroyuki Asakura

Shinji Ikeda

Masanori Iida

Kunihiko Kanazawa

Norio Inami

Yoshishige Yoshikawa

Naoki Takenaka

A heating device for an exhaust catalyst includes a first antenna and a second antenna. The heating device executes a specific radiation control for controlling operation of an electromagnetic wave generator to set a radiation state of an electromagnetic wave from the first antenna to be a different state from a radiation state of an electromagnetic wave from the second antenna. In such a case, the heating device acquires an intensity of an electromagnetic wave, of electromagnetic waves incident on the first antenna, and acquires an intensity of an electromagnetic wave, of electromagnetic waves incident on the second antenna. The heating device acquires a first temperature-correlated value for the first part based on the first electromagnetic wave intensity, and acquires a second temperature-correlated value for the second part based on the second electromagnetic wave intensity.

Heating device for exhaust catalyst

An input impedance matching circuit unit is employed, which is connected between a laser diode chip and a modulation signal input terminal in a module package of a semiconductor laser module that directly modulates micro-wave frequency signals. This input impedance matching circuit unit integrates structural elements such as a micro-strip line, a reactance element, and a bonding wire on a single dielectric surface.

Semiconductor laser module with internal matching circuit

The output of a digital modulator is put into a power amplifying device, is distributed into n pieces in an n-power divider in the power amplifier, passes through n input phase shifters differing individually in the phase change amount, is amplified by n power amplifiers, passes through n output phase shifters to match the phase of n signals, is combined in an n-power combiner, and is issued from an output terminal to a phase shifter, and the output of the phase shifter is issued to a transmission antenna. Herein, the phase value of the phase shifter is determined so as to extend the region of the output load impedance for satisfying the specific value of unwanted radiation, and so that the output load impedance range of the load impedance of the power amplifier may be optimize to the impedance change range of the trans missionantenna, thereby eliminating the isolator and presenting a transmitting device of a portable wireless system realizing smaller size, higher performance, and lower cost of portable wireless system.

Transmitter of wireless system and high frequency power amplifier used

A small and thin plane type narrow-band dielectric filter to be used for a portable telephone and the like, includes a plurality of end short-circuited strip line resonators having a length of about quarter-wavelength formed parallel and closely to each other on a first dielectric substrate and directly magnetically coupled to each other. The thus formed strip line resonators are partially bonded to parallel plane capacitor electrodes formed on a second dielectric substrate in respective overlapping areas thereby electrically coupling the strip line resonators through the parallel plane capacitors, so that the inter-resonator coupling can be reduced due to the fact that it is achieved in combination with the magnetic coupling and the electrical coupling.

Dielectric filter having inter-resonator coupling including both

A linear amplifier has an input signal controller for controlling the level of an input signal to a field-effect transistor (FET) using a DC gate current measured by a gate current detector arranged between a gate bias terminal and a drain bias terminal of the FET and a nonlinear resistor whose resistance can be varied corresponding to an inter-terminal voltage between the gate and the drain of the FET, in which the voltage at the gate of the FET is adjusted to a rate such that a particular drain current which has been determined just before the starting of burst signal transmission corresponding to the level of a power output of the linear amplifier is obtained, and is maintained for a given period of time.

Linear amplifier

Growing community of inventors

Yokohama, Japan

Hikaru Ikeda