Tokyo Electron Limited

Hikaru Adachi

Yoshihiro Sato

Toshio Nakanishi

Shigenori Ozaki

Seiji Matsuyama

Nobuhiko Yamamoto

Koichi Takatsuki

Yuki Osada

Taro Ikeda

Shigeru Kasai

Junichi Kitagawa

Yutaka Fujino

Hiroyuki Miyashita

Yoshiro Kabe

Takashi Kobayashi

Toshihiko Shiozawa

A plasma processing apparatus () includes a processing container () and a microwave introduction device () having a plurality of microwave introduction modules (). A microwave is introduced for each of the plurality of microwave introduction modules (), and S-parameters for each of combinations of the plurality of microwave introduction modules () are obtained based on the introduced microwave and a reflected microwave reflected from the processing container () into the plurality of microwave introduction modules ().

Acquisition method for S-parameters in microwave introduction modules, and malfunction detection method

According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.

Plasma processing method

A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.

Plasma oxidizing method, plasma processing apparatus, and storage medium

According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.

Plasma processing method and computer storage medium

A plasma processing apparatus includes an evacuatable processing vessel; a workpiece mount base for mounting thereon an object to be processed; a microwave transmitting plate provided in an opening of a ceiling of the processing vessel; a planar antenna member for supplying a microwave into the processing vessel via the microwave transmitting plate; a shield lid grounded to cover a top of the planar antenna member; a waveguide for guiding the microwave to the planar antenna member; a member elevating mechanism for relatively varying a vertical distance between the planar antenna member and the shield lid; a tuning rod insertable into the waveguide; a tuning rod driving mechanism for moving the tuning rod to adjust an insert amount thereof; and a matching control section for controlling an elevation amount of the planar antenna member and the insert amount of the tuning rod to obtain a matching adjustment.

Plasma processing apparatus

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Amagasaki, Japan

Hikaru Adachi