Sharp Kabushiki Kaisha Corporation

Unified Innovative Technology, LLC

Other

Hijiri Nakahara

Mitsunori Harada

Junichi Morinaga

Masakatsu Tominaga

Tetsuo Fujita

Yasuhiro Kohara

Toshiyuki Tanaka

Yoshiharu Kataoka

Tsuyoshi Okazaki

Kazuyoshi Fujioka

Taketo Maruyama

Shogo Nishiwaki

Masaaki Saitoh

Hisaki Abe

Masafumi Kokura

Yukihiko Takeuchi

Ryou Hashimoto

Kazuhiro Yoshikawa

Kohji Wakashiro

Sadao Matsushita

Yukihiro Hotta

Kohichi Tanijiri

Yuji Suehiro

The present invention provides a liquid crystal display panel that, when subjected to laser repair for repairing defects, can avoid degradation of members other than the target of the laser repair. A liquid crystal display panel of the present invention includes: an active matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate, the active matrix substrate including: a support substrate; a transparent electrode; a scan signal line; a data signal line; a thin film transistor connected to the scan signal line and the data signal line; a lead-out line extending from the thin film transistor; an insulating film covering the thin film transistor; and a pixel electrode connected to the lead-out line via a contact site formed through the insulating film, the transparent electrode being located at a level closer to the support substrate than the lead-out line and the pixel electrode are, the pixel electrode including a substantially rectangular outline when viewed in a plan view of the support substrate, the transparent electrode having a shape with a missing area that overlaps at least one corner portion of the pixel electrode, the lead-out line extending straight to overlap the corner portion of the pixel electrode, and overlapping the missing area of the transparent electrode.

Liquid crystal display panel comprising a contact site for a pixel electrode that is wider than a line portion of a lead-out line when viewed in a plan view

An active matrix substrateis provided with: a plurality of source wiring lines and a plurality of gate wiring lines, which are arranged in a matrix pattern; and picture elements, each of which has a thin film transistor provided in the vicinity of a part where each source wiring line and each gate wiring line intersect each other, and a picture element electrodeconnected to the thin film transistor. In the active matrix substrate, a base memberis provided such that the source wiring lines and the gate wiring lines intersect each other, and on the base member, the connecting portionof an auxiliary capacitor electrode and the connecting portionof an auxiliary capacitor wiring line are connected to each other by having therebetween a nitride filmcomposed of a high melting point metal material.

Active matrix substrate and display device

This semiconductor device (A) includes: a transparent conductive layer (); an insulating layer () which is formed to cover the transparent conductive layer () and which has a hole () that overlaps at least partially with the transparent conductive layer (); a metal layer () formed on the insulating layer () and inside the hole (); and a contact portion () connecting the transparent conductive layer () and the metal layer () together. In the contact portion (), a refractory metal nitride layer () is arranged between the transparent conductive layer () and a portion of the metal layer () which is located inside the hole (). The refractory metal nitride layer () is in contact with the upper surface of the transparent conductive layer ().

Semiconductor device and production method therefor

An active matrix substrate () is provided with: a plurality of source wiring lines (S) and a plurality of gate wiring lines (G) which are arranged in a matrix; and pixels (P) having thin film transistors () disposed in the vicinity of the intersections of the source wiring lines (S) and the gate wiring lines (G), and pixel electrodes () connected to the thin film transistors (). In the active matrix substrate (), a base material () is disposed in such a manner that the source wiring lines (S) and the gate wiring lines (G) intersect each other, and on the base material (), auxiliary capacity electrodes (), which are provided on the pixel basis, are made of transparent electrodes, and generate an auxiliary capacity, and auxiliary capacity wiring lines (), which are connected to the auxiliary capacity electrodes () and are made of an aluminum alloy, are provided.

A liquid crystal display element disclosed includes: a first substrate; a second substrate; a liquid crystal layer sandwiched between the first substrate and the second substrate; a first transparent electrode provided at a display region of the first substrate; and a second transparent electrode provided at a display region of the second substrate, at least one of dand dbeing not larger than 60 nm, where drepresents a thickness of the first transparent electrode and drepresents a thickness of the second transparent electrode.

Liquid crystal display element and liquid crystal module

Provided is a liquid crystal display manufacturing method that is capable of improving the aperture ratio while suppressing unevenness in the display. The present invention is a method of manufacturing a liquid crystal display provided with an array substrate including an insulating layer, a source bus line and a pixel electrode, in which the source bus line and pixel electrode are provided on the insulating layer, and the source bus line includes a lower layer and an upper layer layered onto the lower layer. This manufacturing method includes a first photolithography step for using a first photomask to pattern the first conductive film, and, after the first photolithography step, a second photolithography step for using a second photomask to pattern at least a second conductive film and forming the source bus line and the pixel electrode. In the first photolithography step, the first conductive film is removed in at least an opening region without being removed at least in the region where the lower layer is formed, and the lower layer and upper layer are formed of the first conductive film and a second conductive film, respectively.

Liquid crystal display manufacturing method

A liquid crystal display panelincludes a first substrateand a second substratefacing each other; a liquid crystal layerformed between the pair of substrates; and a sealing portionlocated so as to surround the liquid crystal layer. An insulating film is formed on a surface of the first substrate which faces the liquid crystal layer. The insulating film has a stacking structure including at least an organic insulating filmand an inorganic insulating filmlocated on the organic insulating film. In a peripheral portion of the insulating film which surrounds the liquid crystal layer, an inorganic insulating film non-formed portionin which the inorganic insulating film is not formed is provided. A surface of the sealing portion which faces the first substrate is entirely located in the inorganic insulating film non-formed portion and entirely adheres to the organic insulating film.

Liquid crystal display panel and method for producing the same

The present invention provides a liquid crystal display device with a high aperture ratio in a pixel region while securing a required storage capacitance. A liquid crystal display device comprises in this order: a thin film transistor array substrate; a liquid crystal layer; and a counter substrate, the thin film transistor array substrate comprising: source lines and gate lines that are disposed in a lattice form; a storage capacitor wiring; a transparent pixel electrode disposed in a pixel region; a thin film transistor comprising a gate electrode, a source electrode, and a drain electrode; a gate insulating film between the gate electrode and the source and drain electrodes in layer sequence; and an interlayer insulating film between the source and drain electrodes and the transparent pixel electrode in layer sequence, wherein a first transparent electrode in a lower layer of the drain electrode and a second transparent electrode connected to the storage capacitor wiring are disposed on the gate insulating film, and the second transparent electrode faces the transparent pixel electrode with the interlayer insulating film therebetween.

Liquid crystal display device

A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatusincluding a reflective electrodeand a transmissive electrodein the pixel electrode, the surface of the reflective electrodeis subject to a plasma treatment, so that the work function of the reflective electrodeis controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrodewithin a difference of &#xb1;0.2 eV with respect to the work function of the transmissive electrode. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses. Even if the optimum direct current offset voltage is applied to one of the reflective electrodeand the transmissive electrode, it is possible to reduce the deterioration of an image display quality resulting from the difference with the optimum direct current offset voltage for the other electrode. As such, it is possible to improve the display quality of the liquid crystal display apparatus

Metal material and its manufacturing method, thin-film device and its manufacturing method, element-side substrate and its manufacturing method, and liquid crystal display and its manufacturing method

In a semi-transmissive liquid crystal display device () including an active matrix substrate (), the active matrix substrate () includes a plurality of source lines (), a first transparent electrode () connected to each source line () through a TFT (), an interlayer insulating film () provided on the first transparent electrode () and having an opening (), a reflective electrode () provided on the interlayer insulating film () and connected to the first transparent electrode () through the opening (), and a second transparent electrode () overlapping the reflective electrode () and the first transparent electrode () and connected to the reflective electrode () and the first transparent electrode (). In each pixel, respective outer peripheral ends (E) of the reflective electrode () and the second transparent electrode () are aligned with each other.

Growing community of inventors

Osaka, Japan

Hijiri Nakahara